IXTY1R6N50D2
The IXTY1R6N50D2 MOSFETs are designed for N-channel operation, featuring a voltage rating of 500V and a current rating of 1.6AIXTY1R6N50D2
The IXTY1R6N50D2 MOSFETs are designed for N-channel operation, featuring a voltage rating of 500V and a current rating of 1.6A
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製造商零件號 # : IXTY1R6N50D2
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包裝/封裝: DPAK-3
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產品分類 : Single FETs, MOSFETs
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IXTY1R6N50D2 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $1.182 | $1.18 |
10 | $1.014 | $10.14 |
30 | $0.922 | $27.66 |
100 | $0.818 | $81.80 |
500 | $0.772 | $386.00 |
1000 | $0.752 | $752.00 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
Unlike traditional enhancement-mode MOSFETs, these depletion-mode devices offer a seamless operation in the ‘normally-on’ mode, eliminating the need for a turn-on voltage at the gate terminal. With robust blocking voltages reaching up to 1700V and minimal drain-to-source resistances, these MOSFETs are well-suited for applications that require constant operation, such as emergency or security systems. By reducing power dissipation and simplifying control, these devices provide a practical solution for achieving energy efficiency and increased reliability in various electronic systems
主要特徵
- Ergonomic design for comfort
- User-friendly interface
- Compact and lightweight
應用
- Feedback networks
- Comparator circuits
- Variable gain amplifiers
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 2.3 |
Continuous Drain Current @ 25 ℃ (A) | 1.6 | Gate Charge (nC) | 23.7 |
Input Capacitance, CISS (pF) | 645 | Thermal resistance [junction-case] (K/W) | 1.25 |
Configuration | Single | Package Type | TO-252 |
Power Dissipation (W) | 100 | Max Off-state Gate-Source Voltage (V) | -4.5 |
Reverse Transfer Capacitance, CRSS (pF) | 16.5 | Sample Request | Yes |
Check Stock | Yes |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IXYS IXTH1R6N50D2?
The IXYS IXTH1R6N50D2 is a power MOSFET transistor designed for high power switching applications. It is part of the IXYS 500V HiPerFET series, known for its high performance and reliability in power electronics.
How Does IXYS IXTH1R6N50D2 Work?
The IXYS IXTH1R6N50D2 works as a voltage-controlled switch, allowing high power loads to be controlled with minimal conduction losses. It operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.
How Many Pins does IXYS IXTH1R6N50D2 have and What are the Functions of the Pinout Configuration?
The IXYS IXTH1R6N50D2 is typically housed in a TO-247 package. The pinout configuration includes:
- G (Gate): Controls the conduction of the MOSFET.
- D (Drain): Connects to the high-voltage load.
- S (Source): Connects to the ground or common reference.
- B (Body): The back metal tab for heat dissipation and mounting.
What are the Pros and Cons of IXYS IXTH1R6N50D2?
Pros:
- High Voltage Rating: Capable of withstanding high voltage levels, suitable for high-power applications.
- Low On-Resistance: Minimizes conduction losses and improves efficiency.
- High Switching Speed: Enables fast switching for power control and regulation.
- Robust Construction: Designed for reliability and ruggedness in demanding environments.
Cons:
- Gate Drive Requirements: May require specialized gate drive circuitry for optimal performance.
- Heat Dissipation: Requires effective thermal management due to high power dissipation.
Are There Any Equivalents/Alternatives to IXYS IXTH1R6N50D2 for Recommendation?
- The Infineon CoolMOS series and the Fairchild SuperFET series are alternatives to the IXYS IXTH1R6N50D2.
- Equivalents to the IXYS IXTH1R6N50D2 include the ON Semiconductor NTH080N65S3F and the Vishay SiHG47N60E.
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