IXFH10N100
247AD MOSFETs ROHS
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製造商零件號 # : IXFH10N100
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包裝/封裝: TO-247-3
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零件狀態 : OBSOLETE
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製造商: Littelfuse
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產品分類 : Single FETs, MOSFETs
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RoHS:
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IXFH10N100 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $29.692 | $29.69 |
210 | $11.849 | $2,488.29 |
510 | $11.452 | $5,840.52 |
990 | $11.256 | $11,143.44 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
Look no further than the IXFH10N100 product from the N-Channel HiPerFET™ Standard series for your power MOSFET needs. With its low gate charge and superior ruggedness, this MOSFET is an ideal choice for both hard switching and resonant mode applications. Its fast intrinsic diode adds to its efficiency, making it a standout component in the industrial sector. Offering a range of standard industrial packages, including isolated types, this series provides versatility and reliability for your specific requirements
主要特徵
- Ruggedised Power Devices
- Low ESR Capacitors
- Advanced MOSFET Technology
- Fault Tolerant Operation
應用
- Integrated protection features
- User-friendly design
- Optimal power output
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Drain-Source Voltage (V) | 1000 | Maximum On-Resistance @ 25 ℃ (Ohm) | 1.2 |
Continuous Drain Current @ 25 ℃ (A) | 10 | Gate Charge (nC) | 122 |
Input Capacitance, CISS (pF) | 4000 | Thermal resistance [junction-case] (K/W) | 0.42 |
Configuration | Single | Package Type | TO-247 |
Power Dissipation (W) | 298 | Maximum Reverse Recovery (ns) | 250 |
Sample Request | No |
常見問題解答
What is IXFH10N100?
The IXFH10N100 is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) designed by IXYS Corporation. It is suitable for applications requiring high power switching and efficient energy control, such as motor drives, power supplies, and industrial automation.
How Does IXFH10N100 Work?
The IXFH10N100 operates as a high-speed semiconductor switch that combines the advantages of MOSFETs and BJTs. It controls large currents with minimal power loss by using a gate to control the conductivity between the collector and emitter, making it suitable for high-power applications.
How Many Pins does IXFH10N100 have and What are the Functions of the Pinout Configuration?
The IXFH10N100 is housed in a TO-247 package. The pinout configuration includes:
- Collector: High-voltage terminal (often connected to the load).
- Emitter: Low-voltage terminal (grounded in typical configurations).
- Gate: Controls the conductivity between the collector and emitter.
- Tab: Often connected to the collector for heat dissipation.
What are the Pros and Cons of IXFH10N100?
Pros:
- High Voltage Capability: Operates at high voltages suitable for industrial and power applications.
- High Speed: Fast switching capability allows for efficient power management and control.
- Robustness: Designed for reliable operation in harsh environments.
- Heat Dissipation: TO-247 package enables effective heat dissipation.
Cons:
- Complex Drive Circuitry: Requires precise gate drive circuitry for optimal performance.
- Size and Weight: Larger package size compared to smaller transistors.
- Cost: Higher cost compared to standard MOSFETs or BJTs due to its specialized design.
Are There Any Equivalents/Alternatives to IXFH10N100 for Recommendation?
- The IRG4PC50UD from Infineon is a comparable high-voltage IGBT.
- Alternatives to the IXFH10N100 include the FGH40N60SFD from Fairchild Semiconductor and the STGW40H60DF from STMicroelectronics.
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