2N4402
Bipolar Transistors - BJT in PNP Configuration, TO-92 Package, Rated for 40V Voltage and 625mW Power Dissipation, with a Gain of 50@150mA at 2V 600mA2N4402
Bipolar Transistors - BJT in PNP Configuration, TO-92 Package, Rated for 40V Voltage and 625mW Power Dissipation, with a Gain of 50@150mA at 2V 600mA
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2N4402 數據表
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詳細說明
The 2N4402 is a Bipolar Junction Transistor (BJT) that falls under the PNP category, designed for low-power applications in electronic circuits. It has a maximum voltage rating of 40V and can handle a continuous current up to 600mA. The transistor has a frequency capability of 150MHz, making it suitable for switching and amplification tasks in various electronic devices. The 2N4402 comes in a Through Hole TO-92 package, which is a standard in the industry and allows for easy mounting on a printed circuit board. It has three terminals - the emitter, base, and collector - each serving a specific function in controlling the flow of current through the transistor. With a power dissipation rating of 625mW, the 2N4402 is capable of handling moderate power levels without overheating. Its compact size and robust construction make it a versatile component for use in a wide range of electronic projects, including audio amplifiers, voltage regulators, and signal processing circuits.
![](/files/uploads/product/b/938bb590f86c4814883e526c061fbc31.webp)
主要特徵
- PNP Bipolar Junction Transistor
- Low power, high gain transistor
- Voltage Rating: -40V
- Collector Current: -600mA
- DC Current Gain: 40 to 250
- TO-92 Package
- Suitable for switching and amplifier applications
應用
- Audio amplifiers
- Sensor circuits
- Switching circuits
- Power drivers
- Signal processing circuits
- Voltage regulators
- Oscillators
- Motor controllers
- LED drivers
- Inverter circuits
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Manufacturer | onsemi | Product Category ! | Bipolar Transistors - BJT |
RoHS | N | Mounting Style | Through Hole |
Package / Case | TO-92-3 | Transistor Polarity | PNP |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 40 V |
Collector- Base Voltage VCBO | 40 V | Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 750 mV | Maximum DC Collector Current | 600 mA |
Pd - Power Dissipation | 625 mW | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Brand | onsemi / Fairchild |
Continuous Collector Current | 600 mA | DC Collector/Base Gain hfe Min | 30 at 1 mA, 1 V, 50 at 10 mA, 1 V, 50 at 150 mA, 2 V, 20 at 500 mA, 2 V |
DC Current Gain hFE Max | 150 | Height | 5.33 mm |
Length | 5.2 mm | Product Type ! | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
Width | 4.19 mm | Unit Weight | 0.007090 oz |
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