TO-247-3 相關產品

零件號 描述 製造商 生命週期狀態 貨物週期 有存貨 操作
IRG4PC50U TO247 55A IRG4PC50U IGBT Infineon Technologies 3~7 Days 3,410
IRG4PC40U 40A TO247 IGBT IRG4PC40U Infineon Technologies 3~7 Days 4,165
IKW40T120 ROHS TO-247AC-3 IGBTs Infineon NRND 3~7 Days 8,376
IKW25N120T2 Rated at 1200 volts and 50 amps Infineon NRND 3~7 Days 9,586
IKW20N60T TO247-3 IGBT rated at 650V, 20A, and 1.5V for efficient power switching Infineon ACTIVE 3~7 Days 8,480
SGW50N60HS High-speed NPT technology IGBT transistors rated at 600V and 50A Infineon OBSOLETE 3~7 Days 9,983
SGW30N60HS 30A IGBT Transistors featuring High Speed NPT Technology and 600V rating Infineon OBSOLETE 3~7 Days 7,569
SGW30N60 Infineon's SGW30N60 is an IGBT Transistor that can handle currents of up to 41A and voltages of 600V, packaged in a 3-Pin TO-247 for easy integration Infineon OBSOLETE 3~7 Days 9,055
NGTB25N120LWG High-power electronic component for reliable switching applicatio Onsemi OBSOLETE 3~7 Days 7,161
NGTB15N120IHLWG Trans IGBT Chip N-CH 1200V 30A 250W 3-Pin(3+Tab) TO-247 Tube Onsemi OBSOLETE 3~7 Days 9,787
STW45NM50FD FDMesh N-channel MOSFET, 500V, 45A Stmicroelectronics OBSOLETE 3~7 Days 6,420
STW43NM60ND STW43NM60ND is a Power MOSFET with an N-Channel configuration, designed for flange mounting and utilizing FDmesh technology Stmicroelectronics OBSOLETE 3~7 Days 5,870
STW20NM50FD FDmesh(TM) technology utilized in the design of this N-Channel Power MOSFET with FAST DIODE Stmicroelectronics ACTIVE 3~7 Days 5,300
STW20NM50 TO-247 package type for easy mounting and heat dissipation of the MOSFET transistor Stmicroelectronics OBSOLETE 3~7 Days 7,843
STW14NM50 MOSFET with a maximum current of 14 Amps and a 500 Volt rating Stmicroelectronics OBSOLETE 3~7 Days 6,616
STW13009 NPN Bipolar Junction Transistor with 400V Voltage Rating Shindengen OBSOLETE 3~7 Days 7,672
STW12NK95Z N-Channel 950V 0.9 Ohm Flange Mount SuperMESH Power MOSFET Stmicroelectronics OBSOLETE 3~7 Days 8,305
IKW75N65ES5 High Speed Soft Switching IGBT with Full Current Rated RAPID 1 diode Infineon ACTIVE 3~7 Days 6,133
STGW40NC60V 0 Amp IGBT Transistors N-Ch 600 Volt Stmicroelectronics OBSOLETE 3~7 Days 7,580
SKW30N60HS Trans IGBT Chip N-CH 600V 41A 250W 3-Pin TO-247 Tube Infineon OBSOLETE 3~7 Days 7,834
SKW30N60 TO-247 Tube IGBT Transistor Chip N-Channel 600 Volts 41 Amps 250 Watts 3-Pin (3+Tab) Infineon OBSOLETE 3~7 Days 7,172
SKW25N120 IGBTs TO-247-3 ROHS Infineon OBSOLETE 3~7 Days 8,594
SKW07N120 NPT TO-247-3-1 IGBTs rated at 16.5A and 1.2kV Infineon OBSOLETE 3~7 Days 9,264
IGW30N100T IGBT with 1000V voltage and 60A current handling capacity in TO-247-3 package Infineon OBSOLETE 3~7 Days 8,719
HGTG5N120BND 1200V, 21A-rated N-channel Trans IGBT chip enclosed in a TO-247 tube with three pins and tabs Onsemi OBSOLETE 3~7 Days 8,544
HGTG30N60B3D TO-247-packaged N-channel IGBT chip designed for a maximum voltage of 600V and a current rating of 60A Onsemi OBSOLETE 3~7 Days 8,085
HGTG30N60B3 3-Pin(3+Tab) TO-247 Rail Trans IGBT Chip N-CH 600V 60A Onsemi OBSOLETE 3~7 Days 8,800
HGTG30N60A4 Trans IGBT Chip N-CH 600V 75A 463W 3-Pin(3+Tab) TO-247 Tube Onsemi 3~7 Days 6,696
HGTG27N120BN IGBT NPT 1200V 72A TO247-3 Onsemi OBSOLETE 3~7 Days 8,508
HGTG20N60A4 IGBT, 600V, Switched-Mode Power Supply (SMPS) Onsemi OBSOLETE 3~7 Days 9,925
HGTG12N60A4D channel 600V 54A Onsemi OBSOLETE 3~7 Days 8,423
HGTG12N60A4 247 package with tab for easier mounting Onsemi OBSOLETE 3~7 Days 8,919
HGTG10N120BND TO-247 packaged N-Channel Insulated Gate Bipolar Transistor (IGBT), capable of handling currents up to 35A and voltages up to 1200V Onsemi OBSOLETE 3~7 Days 8,593
FGH80N60FDTU FGH80N60FDTU: Transistor IGBT Chip, N-channel, 600 Volts, 80 Amps, TO-247 Package, 290 Watts Onsemi OBSOLETE 3~7 Days 9,238
APT50GT60BRDQ2G Contact for further information Microchip Technology ACTIVE 3~7 Days 8,089
MTW24N40E Product MTW24N40E is a N-channel silicon power MOSFET with a current rating of 24A and a voltage rating of 400V, featuring a low on-resistance of 0 Onsemi ACTIVE 3~7 Days 8,051
IXTH1N250 Transistor MOSFET N-channel with 2.5KV voltage rating and 1.5A current rating in TO-247AD package IXYS Active 3~7 Days 7,395
IKW40N60H3 IGBT with Anti-Parallel Diode, 600V, 40A Infineon ACTIVE 3~7 Days 9,314
IKW25N120H3 High-performance IGBT Chip designed for efficient power switching Infineon ACTIVE 3~7 Days 6,951
HGTG20N50C1D N-channel Insulated Gate Bipolar Transistor (IGBT) Chip, 500V, 26A, TO-247 Package Harris Corporation ACTIVE 3~7 Days 8,007

附加包裝/箱

145-PGA BBGA-783 PLCC44 MW 15L QFN-40 EP Bead WFQFN-28 CDFN-6 DIP4 TVSOP-16 UTQFN SOT1426-2 20-QFN SOT1854-1 TSOP-8

熱門包裝/箱

BGA-164 BGA-45 BGA165 PGA-132 LGA-144 PLCC28 QFP100 QFN-135 DFNEP-10 SOP8S CSP-81 SON-14 SOJ20 SOIC W-18 MLP EP-6 CBGA-32 PAK-5 DSO-28