TO-247-3 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
APT5020BVRG | Projected EOL: 2048-10-03 | Microchip Technology | ACTIVE | 3~7 Days | 7,768 | |
IGW15T120 | Low Loss IGBT Transistors: 1200V, 15A | Infineon | OBSOLETE | 3~7 Days | 5,436 | |
MSC090SMA070B | Trans MOSFET N-CH SiC 700V 28A 3-Pin(3+Tab) TO-247 | Microchip Technology | ACTIVE | 3~7 Days | 6,653 | |
HGTG11N120CND | HGTG11N120CND 298W 43A 1.2kV NPT TO-247AC-3 IGBTs ROHS | Onsemi | NRND | 3~7 Days | 7,248 | |
BU323ZG | Trans Darlington NPN 350V 10A 150000mW 3-Pin(3+Tab) TO-247 Tube | Onsemi | OBSOLETE | 3~7 Days | 6,392 | |
BDV65BG | Trans Darlington NPN 100V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube | Onsemi | OBSOLETE | 3~7 Days | 7,862 | |
IXGH40N120B2D1 | Power transistor with a voltage capacity of 1.2 kilovolts and a current handling capability of 75 amps, packaged in TO-247AD | IXYS | ACTIVE | 3~7 Days | 8,589 | |
ARF463AG | Trans RF FET N-CH 500V 9A 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | ACTIVE | 3~7 Days | 7,575 | |
HGTG30N60A4D | IGBT Transistors 600V N-Channel IGBT SMPS Series | Onsemi | 3~7 Days | 2,492 | ||
IXTR32P60P | IXTR32P60P MOSFETs that meet ROHS standards | IXYS | Active | 3~7 Days | 7,756 | |
IXTH48P20P | Transistor for Power Applications | IXYS | ACTIVE | 3~7 Days | 7,406 | |
IXTH16N50D2 | N-Channel Depletion Mode MOSFET, 16A 500V, TO-247AD Package | IXYS | Active | 3~7 Days | 6,274 | |
FDH5500 | Product FDH5500 is characterized by its specifications: 55V voltage rating, 75A current rating, with a low resistance of 7mΩ at 75A | Onsemi | OBSOLETE | 3~7 Days | 9,103 | |
IXKR25N80C | N-channel 800V 25A MOSFET with isolated package in ISOPLUS 247 | IXYS | NRND | 3~7 Days | 8,517 | |
RFG40N10 | N-channel MOSFET rated for 100 volts and 40 amps | Onsemi | OBSOLETE | 3~7 Days | 7,162 | |
IXTH6N100D2 | 1000V MOSFET capable of handling 6A current | IXYS | Active | 3~7 Days | 6,213 | |
IXFH12N120P | 1.2KV, 12A N-channel MOSFET in TO-247 package" | IXYS | ACTIVE | 3~7 Days | 6,445 | |
IXFH21N50 | N-Channel Silicon MOSFET with 21A Drain Current, 500V Voltage, 0.25Ω On-Resistance, TO-247AD Package, 3-Pin Configuration | Littelfuse | NRND | 3~7 Days | 5,774 | |
IXFH120N20P | channel MOSFET rated for 200V voltage operation | IXYS | ACTIVE | 3~7 Days | 5,204 | |
IXBH2N250 | BiMOSFET IGBT with Very High Voltage capability | IXYS | ACTIVE | 3~7 Days | 6,493 | |
BUF410A | 15A, 450V Bipolar Transistor | Stmicroelectronics | OBSOLETE | 3~7 Days | 6,731 | |
LSIC1MO170E0750 | 60W High Voltage Transistor | Littelfuse Inc. | ACTIVE | 3~7 Days | 9,756 | |
FGH40N120ANTU | FGH40N120ANTU 417W Non-Punch Through IGBTs | Onsemi | Obsolete | 3~7 Days | 6,888 | |
IXFH6N120P | N-channel High Performance Power MOSFET | IXYS | ACTIVE | 3~7 Days | 9,738 | |
MUR3060WTG | MUR3060WTG UltraFast 600V 30A Rectifiers | Onsemi | OBSOLETE | 3~7 Days | 5,953 | |
IXFX160N30T | The MOSFET has a voltage rating of 300V and can handle a current of up to 160A | IXYS | Active | 3~7 Days | 8,695 | |
IXBH5N160G | TO-247AD Package | IXYS | 3~7 Days | 9,404 | ||
HGTG11N120CN | N-Channel control | Onsemi | OBSOLETE | 3~7 Days | 6,288 | |
IXFR26N120P | N-channel MOSFET transistor capable of handling 1.2 kilovolts and 15 amperes with ISOPLUS 247 packaging | IXYS | ACTIVE | 3~7 Days | 5,120 | |
IXTH80N075L2 | The IXTH80N075L2 is a high-power N-MOSFET transistor designed for unipolar operation, supporting voltages up to 75V and currents up to 80A | IXYS | ACTIVE | 3~7 Days | 7,703 | |
UJ3C120040K3S | Cascode-configured SiC transistor integrating N-JFET and N-MOSFET elements, optimized for unipolar operation at 1.2kV voltage and 47A current | Qorvo | ACTIVE | 3~7 Days | 6,801 | |
NGTB40N120S3WG | Trans IGBT Chip N-CH 1200V 160A 454W 3-Pin(3+Tab) TO-247 Tube | Onsemi | OBSOLETE | 3~7 Days | 5,751 | |
NGTB40N120LWG | Trans IGBT Chip N-CH 1200V 80A 260W 3-Pin(3+Tab) TO-247 Tube | Onsemi | OBSOLETE | 3~7 Days | 7,386 | |
NGTB30N135IHR1WG | Powerful N-Channel IGBT chip for high-speed switching and high-reliability performance | Onsemi | 3~7 Days | 5,221 | ||
LSIC1MO120E0160 | Power Field-Effect Transistor | Littelfuse Inc. | ACTIVE | 3~7 Days | 6,779 | |
LSIC1MO120E0120 | N-Channel power MOSFET with 1200 V voltage rating | Littelfuse Inc. | ACTIVE | 3~7 Days | 9,692 | |
IXTH64N10L2 | IXTH64N10L2 N-Channel MOSFET for linear applications | IXYS | ACTIVE | 3~7 Days | 9,315 | |
IXFH80N25X3 | Power Field-Effect Transistor | IXYS | ACTIVE | 3~7 Days | 7,284 | |
IXFH60N60X | MOSFET MSFT N-CH ULTRA JNCT X3&44 | IXYS | Active | 3~7 Days | 9,072 | |
IXFH50N85X | High voltage MOSFET for X-Class power applications | IXYS | Active | 3~7 Days | 9,667 |
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