恭喜您提交成功
提交失敗
TO-247-3 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| IRFP460LC | Substitute option for IRFP460LC MOSFET: 844-IRFP460LCPBF | Vishay | 3~7 Days | 3,278 | ||
| IRFP22N60K | 600V-rated N-channel MOSFET suited for high-power applications, capable of carrying a continuous current of 22A in a TO-247AC package | Vishay | 3~7 Days | 3,124 | ||
| STPS40150CW | 150 V, 40 A dual High Voltage Power Schottky Rectifier | STMicroelectronics | 3~7 Days | 5,683 | ||
| MJW1302A | 15 A, 230 V, 200 Watt, PNP Bipolar Power Junction Transistor, TO-247, 30-TUBE | Onsemi | 3~7 Days | 4,094 | ||
| FCH072N60F | Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247, 450-TUBE | Onsemi | 3~7 Days | 6,187 | ||
| MJW3281A | 15 A, 230 V, 200 Watt, NPN Bipolar Power Junction Transistor, TO-247, 30-TUBE | Onsemi | 3~7 Days | 7,020 | ||
| FDH44N50 | TO-247-packaged UniFETTM N-Channel Power MOSFET rated at 500 Volts, 44 Amps, with an on-resistance of 120 Milliohms | Onsemi | 3~7 Days | 3,573 | ||
| RURG3020CC | 60A, 200V, Ultrafast Dual Diode, 450-TUBE | Onsemi | 3~7 Days | 3,507 | ||
| RFG60P06E | 60A power P-channel MOSFET | Onsemi | OBSOLETE | 3~7 Days | 5,564 | |
| IXGH24N60C4D1 | Through Hole TO-247AD | IXYS | Obsolete | 3~7 Days | 6,286 | |
| IHW30N120R2 | IGBT with 60A Collector Current and 1200V Breakdown Voltage, N-Channel, TO-247AD Package, Green Plastic | INFINEON | 3~7 Days | 3,922 | ||
| IKW30N60T | Insulated Gate Bipolar Transistor Chip for 600V and 45A in TO-247 Package | Infineon Technologies | ACTIVE | 3~7 Days | 9,200 | |
| IKW50N60TA | Automotive N-channel IGBT semiconductor with 600V voltage rating, 80A current rating, and 333W power dissipation in TO-247 package | Infineon Technologies | OBSOLETE | 3~7 Days | 5,161 | |
| IKW30N60H3 | TO-247-3 IGBTs ROHS description product IKW30N60H3 | Infineon Technologies | ACTIVE | 3~7 Days | 9,356 | |
| IXDH20N120D1 | IXDH20N120D1 model of IGBT transistors, supporting 20 Amps and 1200V | IXYS | OBSOLETE | 3~7 Days | 6,731 | |
| IRFP4868PBF | TO-247AC package configuration for easy mounting and heat dissipation of the IRFP4868PBF | Infineon Technologies | NRND | 3~7 Days | 5,791 | |
| SPW35N60C3 | With TO-247AC-3 packaging, the SPW35N60C3 MOSFET adheres to ROHS guidelines | Infineon Technologies | ACTIVE | 3~7 Days | 5,507 | |
| IRFP460PBF | Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC | Vishay | 3~7 Days | 3,874 | ||
| IXFH320N10T2 | IXFH320N10T2 is a TO-247AD packaged MOSFET that is compliant with ROHS regulations | Ixys | 3~7 Days | 3,421 | ||
| C3D20060D | 600V Silicon Carbide Schottky Diode, TO-247 package, rated for 20A current, Temp Unit | Wolfspeed | ACTIVE | 3~7 Days | 6,767 | |
| IRG4PF50WPBF | Infineon IRG4PF50WPBF IGBT Transistor | Infineon | 3~7 Days | 4,017 | ||
| FCH041N60E | TO-247, 450-TUBE | Onsemi | NRND | 3~7 Days | 7,561 | |
| FCH040N65S3 | FCH040N65S3 is a powerful N-channel MOSFET with a rating of 65A and 650V | Onsemi | 3~7 Days | 5,577 | ||
| TP90H050WS | 119W power handling capacity | Transphorm | OBSOLETE | 3~7 Days | 1 | |
| IXFH220N20X3 | TO-247 IXTH MOSFET | IXYS | Active | 3~7 Days | 6,370 | |
| GAN063-650WSAQ | N-channel power MOSFET with low on-state resistance and high current handling capacity | Nexperia USA Inc. | ACTIVE | 3~7 Days | 9,857 | |
| IXTH220N20X4 | MOSFET Transistor with 220 Amperes and 200 Volts | IXYS | Active | 3~7 Days | 7,354 | |
| IXTH60N20X4 | Overview of IXTH60N20X4, a discrete MOSFET component | IXYS | Active | 3~7 Days | 9,520 | |
| IXTH240N15X4 | 940W 4.5V @ 250uA TO-247-3 ROHS | Littelfuse | 3~7 Days | 3,517 | ||
| IXFH150N30X3 | N-channel MOSFET with ultra junction technology, available in a pack of 3 | IXYS | ACTIVE | 3~7 Days | 6,843 | |
| IXFH100N30X3 | Unipolar N-MOSFET transistor belonging to the X3-Class category | IXYS | ACTIVE | 3~7 Days | 9,197 | |
| MSC035SMA070B | MSC035SMA070B is a N Channel MOSFET with a maximum voltage rating of 700V and a continuous drain current of 77A | Microchip Technology | ACTIVE | 3~7 Days | 7,366 | |
| MSC050SDA120B | Diode Schottky SiC 1.2KV 109A 2-Pin(2+Tab) TO-247 Tube | Microchip Technology | ACTIVE | 3~7 Days | 5,185 | |
| MSC035SMA170B | 1700V Silicon Carbide (SiC) MOSFET | Microchip Technology | ACTIVE | 3~7 Days | 6,171 | |
| MSC025SMA120B | MOSFET MSC025SMA120B | Microchip Technology | ACTIVE | 3~7 Days | 7,954 | |
| MSC080SMA120B | 1.2KV 30A Silicon Carbide N-Channel MOSFET 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | ACTIVE | 3~7 Days | 5,778 | |
| MSC015SMA070B | Silicon Carbide MOSFETs | Microchip Technology | ACTIVE | 3~7 Days | 6,945 | |
| IXFH90N20X3 | IXFH90N20X3 features a low on-state resistance of 12.8mΩ at 10V and 45A current, with a gate threshold voltage of 4.5V at 1.5mA | Littelfuse | 3~7 Days | 3,947 | ||
| IXFX120N20 | 120A, 200V power MOSFET | Littelfuse | NRND | 3~7 Days | 7,455 | |
| IXTH1N200P3 | High Voltage Power MOSFET, 2000V/1A, TO-247 Enclosure | IXYS | ACTIVE | 3~7 Days | 8,735 |
附加包裝/箱