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PQFN EP 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| FDMS86182 | N-Channel Shielded Gate PowerTrench® MOSFET 100V, 78A, 7.2mΩ, 3000-REEL | Onsemi | ACTIVE | 3~7 Days | 8,362 | |
| FDMF3180 | integrated MOSFETs plus driver for high current | Onsemi | 3~7 Days | 3,038 | ||
| FDMD82100L | Dual N-Channel PowerTrench® MOSFET 100V, 24A, 19.5mΩ | Onsemi | OBSOLETE | 3~7 Days | 5,317 | |
| FDMS3660AS | Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V | Onsemi | OBSOLETE | 3~7 Days | 9,611 | |
| IRFH5106TR2PBF | Tape and reel packaged N-channel MOSFET with 60V voltage tolerance and 21A current capacity, housed in an 8-pin PQFN EP enclosure | Infineon Technologies Ag | 3~7 Days | 4,670 | ||
| FDMS7572S | FDMS7572S ON Semiconductor Transistors MOSFETs N-CH Si 25V 23A 8-Pin PQFN EP T/R Si - Arrow.com | Fairchild Semiconductor | ACTIVE | 3~7 Days | 5,159 | |
| FDMS001N025DSD | 25 V Asymmetric Dual N−Channel PowerTrench® Power Clip MOSFET | Onsemi | OBSOLETE | 3~7 Days | 9,586 | |
| FDMS86540 | N-Channel PowerTrench® MOSFET 60V, 129A, 3.4mΩ | Onsemi | ACTIVE | 3~7 Days | 8,088 | |
| FDMS86500L | MOSFET, N CH, 60V, 80A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012) | Onsemi | ACTIVE | 3~7 Days | 8,912 | |
| FDMC8360LET40 | N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ | Onsemi | ACTIVE | 3~7 Days | 9,823 | |
| FDMC8321LDC | MOSFET N-Channel Power Trench MOSFET 40V, 108A, 2.5mohm | Onsemi | Active | 3~7 Days | 9,837 | |
| FDMS86320 | Trans MOSFET N-CH Si 80V 10.5A 8-Pin PQFN EP T/R | Onsemi | ACTIVE | 3~7 Days | 7,502 | |
| FDMS86252L | MOSFET, N-CH, 150V, 12A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 50W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018) | Onsemi | ACTIVE | 3~7 Days | 9,590 | |
| FDMS8622 | N-Channel 4.8A (Ta), 16.5A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-PQFN (5x6) | Onsemi | ACTIVE | 3~7 Days | 5,462 | |
| FDMS86202ET120 | N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mΩ | Onsemi | ACTIVE | 3~7 Days | 5,253 | |
| FDMS86183 | This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. | Onsemi | ACTIVE | 3~7 Days | 8,889 | |
| FDMS8460 | ON SEMICONDUCTOR - FDMS8460 - MOSFET,N CH,40V,25A,POWER56 | Onsemi | ACTIVE | 3~7 Days | 9,776 | |
| FDMS8333L | MOSFET, N-CH, 40V, 76A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 69W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019) | Onsemi | ACTIVE | 3~7 Days | 7,367 | |
| FDMC007N08LCDC | Attributes: 80V voltage rating, 64A current rating, 6.8 mOhm on-resistance | Onsemi | Active | 3~7 Days | 6,235 | |
| FDMC007N08LC | N-Channel Shielded Gate PowerTrench MOSFET: A robust MOSFET design for efficient power management | Onsemi | Active | 3~7 Days | 7,651 | |
| FDPC8016S | 25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET | Onsemi | ACTIVE | 3~7 Days | 9,135 | |
| FDMS8320L | ONSEMI - FDMS8320L - Power MOSFET, N Channel, 40 V, 248 A, 800 µohm, Power 56, Surface Mount | Onsemi | ACTIVE | 3~7 Days | 5,256 | |
| FDMS8018 | FDMS8018 is a surface mount MOSFET designed for power applications, characterized by its single N-channel configuration and PowerTrench technology | Onsemi | ACTIVE | 3~7 Days | 9,361 | |
| FDMS7698 | MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012) | Fairchild Semiconductor | ACTIVE | 3~7 Days | 7,401 | |
| FDMS7682 | Trans MOSFET N-CH Si 30V 16A 8-Pin PQFN EP T/R | Onsemi | ACTIVE | 3~7 Days | 5,520 | |
| FDMS7680 | Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R | Onsemi | ACTIVE | 3~7 Days | 9,969 | |
| FDMS7670 | Trans MOSFET N-CH Si 30V 21A 8-Pin PQFN EP T/R | Fairchild Semiconductor | ACTIVE | 3~7 Days | 6,385 | |
| FDMS7650 | MOSFET,N CH,30V,36A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011) | Onsemi | ACTIVE | 3~7 Days | 8,575 | |
| NTTFS034N15MC | Trans MOSFET N-CH 150V 27A 8-Pin PQFN EP T/R | Onsemi | ACTIVE | 3~7 Days | 8,883 | |
| NTTFS022N15MC | Trans MOSFET N-CH 150V 7.4A 8-Pin PQFN EP T/R | Onsemi | ACTIVE | 3~7 Days | 5,438 | |
| FDMT800150DC | N-Channel Dual CoolTM 88 PowerTrench® MOSFET 150V, 99A, 6.5mΩ | Onsemi | ACTIVE | 3~7 Days | 8,618 | |
| FDMS3662 | N-Channel PowerTrench® MOSFET 100V, 39A, 14.8mΩ, 3000-REEL | Onsemi | ACTIVE | 3~7 Days | 5,534 | |
| FDMS3500 | Trans MOSFET N-CH Si 75V 9.2A 8-Pin PQFN EP T/R | Onsemi | ACTIVE | 3~7 Days | 6,485 | |
| FDMS037N08B | MOSFET, N-CH, 75V, 100A, 104.2W, POWER56; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.00301ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 104.2W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018) | Onsemi | ACTIVE | 3~7 Days | 6,876 | |
| FDMS0309AS | N-Channel PowerTrench® SyncFET™ 30V, 49A, 3.5mΩ | Onsemi | ACTIVE | 3~7 Days | 6,818 | |
| FDMS015N04B | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. | Onsemi | ACTIVE | 3~7 Days | 5,809 | |
| FDMS004N08C | MOSFET 80V/20V N-Channel PTNG MOSFET | Onsemi | Active | 3~7 Days | 6,125 | |
| NTMFD0D9N02P1E | onsemi Power Mosfet 30/25V POWERTRENCH Power Clip Power Mosfet 30/25V POWERTRENCH? Power Clip | Onsemi | ACTIVE | 3~7 Days | 7,181 | |
| FDMF6821B | performing, small-sized | Onsemi | 3~7 Days | 5,036 | ||
| FDMF5175 | 30A Smart Power Stage (SPS) Modules with Integrated Current and Temperature Monitors | Onsemi | ACTIVE | 3~7 Days | 8,035 |
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