D2PAK 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
STB100N10F7 | STMicroelectronics STB100N10F7 is an N-channel MOSFET transistor with a current rating of 80 A and a voltage rating of 100 V in a 3-Pin D2PAK package | STMicroelectronics | 3~7 Days | 4,606 | ||
FQB12P20TM | Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, 800-REEL | Onsemi | 3~7 Days | 4,124 | ||
FDB9503L-F085 | FDB9503L-F085 is a P-Channel MOSFET suitable for high-power applications | Onsemi | 3~7 Days | 4,001 | ||
IRF4905SPBF | IRF4905SPBF: Power MOSFET with P-Type Silicon, 55V Voltage Tolerance, and 70A Current Capacity, Encapsulated in a D2PAK Tube | Infineon Technologies | 3~7 Days | 5,148 | ||
IRF3706SPBF | N-channel MOSFET with HEXFET technology, rated for a maximum voltage of 20V and featuring a low on-resistance of 8.5mΩ with a gate charge of 23nC | INFINEON | 3~7 Days | 5,788 | ||
IRF2807ZS | Low resistance of 0.0094ohm | INFINEON | 3~7 Days | 3,997 | ||
IRFS7530TRLPBF | High voltage trench technology transistor | INFINEON | 3~7 Days | 5,281 | ||
IRFS52N15D | D2PAK-3 package configuration | INFINEON | 3~7 Days | 6,526 | ||
IRF640NS | The TO-263 package design of IRF640NS enables easy installation and heat dissipation for improved performance | INFINEON | 3~7 Days | 7,377 | ||
BUK768R3-60E | Standard threshold voltage FET | NXP | 3~7 Days | 5,812 | ||
STGB7NC60HDT4 | Trans IGBT Chip N-channel 600V 25A 80W D2PAK | Stmicroelectronics | Active | 3~7 Days | 7,396 | |
TN1215-800G-TR | Thyristor with 800V voltage rating | Stmicroelectronics | Active | 3~7 Days | 6,491 | |
STGB30V60DF | Short-circuit rugged IGBT | Stmicroelectronics | Active | 3~7 Days | 7,404 | |
NTB35N15T4G | Single N-Channel Power MOSFET 150V, 37A, 50 mΩ, D2PAK 2 LEAD, 800-REEL | Onsemi | 3~7 Days | 3,703 | ||
NTB30N20 | 30A, 200V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 | Onsemi | 3~7 Days | 7,795 | ||
MURB1660CT | Plastic Case 418B-04 | Onsemi | 3~7 Days | 7,285 | ||
NTB5605PG | MOSFET rated for -60V and -18.5A in a P-Channel configuration | Onsemi | 3~7 Days | 5,700 | ||
NTB52N10 | N-Channel MOSFET with 100V voltage and 52A current capacity | Onsemi | 3~7 Days | 5,293 | ||
NTB75N06T4G | Power MOSFET 60V 75A 9.5 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL | Onsemi | 3~7 Days | 4,940 | ||
NTB52N10T4G | Power MOSFET 100V 52A 30 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL | Onsemi | 3~7 Days | 6,899 | ||
MBRB4030 | 40A, 30V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 418B-04, D2PAK-3 | Onsemi | 3~7 Days | 5,973 | ||
MBRB2535CTL | 12.5A, 35V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 418B-04, D2PAK-3 | Onsemi | 3~7 Days | 5,937 | ||
MBRB2545CT | 15A, 45V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 418B-04, D2PAK-3 | VISHAY | 3~7 Days | 5,195 | ||
FJB3307DTM | High Voltage Fast Switching NPN Power Transistor, 800-REEL | Onsemi | Obsolete | 3~7 Days | 7,168 | |
FQB34N20LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK, 800-REEL | Onsemi | 3~7 Days | 4,962 | ||
STB80NF10T4 | STB80NF10T4: Efficient 100V N-Channel MOSFET with Reduced Gate Charge | Stmicroelectronics | ACTIVE | 3~7 Days | 5,351 | |
STB14NM50N | N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package | STMicroelectronics | Active | 3~7 Days | 7,190 | |
STB21N65M5 | N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in D2PAK package | STMicroelectronics | 3~7 Days | 5,336 | ||
STB13N60M2 | N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package | STMicroelectronics | 3~7 Days | 6,113 | ||
STB18N60M2 | N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package | STMicroelectronics | 3~7 Days | 4,391 | ||
STTH810G-TR | Diode Switching 1KV 8A 3-Pin(2+Tab) D2PAK T/R | STMicroelectronics | ACTIVE | 3~7 Days | 7,870 | |
L7812CD2T-TR | Linear Voltage Regulators 12V 1.0A Positive | Stmicroelectronics | ACTIVE | 3~7 Days | 5,170 | |
L7805CD2T-TR | Integrated circuits for controlling positive voltage | Stmicroelectronics Nv | 3~7 Days | 7,941 | ||
L7805ABD2T-TR | D2PAK packaged standard 5V positive voltage regulator suitable for various applications | Stmicroelectronics | ACTIVE | 3~7 Days | 5,767 | |
STB80N20M5 | N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package | STMicroelectronics | 3~7 Days | 3,960 | ||
STB120NF10T4 | N-Channel MOSFET with a maximum voltage of 100V and a current rating of 110A in a D2PAK package | Stmicroelectronics | ACTIVE | 3~7 Days | 8,735 | |
STB30NF20L | N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET | STMicroelectronics | Active | 3~7 Days | 6,901 | |
LD1085D2T33R | This TO-263-2 package ROHS-compliant linear voltage regulator, LD1085D2T33R, provides a stable 3 | Stmicroelectronics | ACTIVE | 3~7 Days | 5,099 | |
STB13N80K5 | N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package | STMicroelectronics | Active | 3~7 Days | 7,394 | |
STB30NF20 | Description of STB30NF20 product: This N-channel MOSFET has a voltage rating of 200 volts and a current rating of 30 amps | Stmicroelectronics | 3~7 Days | 4,449 |
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