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BGA-84 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| HY5PS1G1631CFP-S5 | HY5PS1G1631CFP-S5 is a DDR2 SDRAM chip commonly used in electronic devices for its high-speed data transfer capabilities | SKHYNIX | 3~7 Days | 5,396 | ||
| K4T51163QJ-BCE6 | DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA | SAMSUNG | 3~7 Days | 5,698 | ||
| H5PS1G63EFR-Y5C | Elevate Your Computing Experienc | SKHYNIX | 3~7 Days | 4,685 | ||
| K4T1G164QF-BCE6 | 0.45 nanoseconds | SAMSUNG | 3~7 Days | 4,887 | ||
| K4T1G164QE-HCE6 | Advanced PBGA84 packaging for durability and stability | SAMSUNG | 3~7 Days | 4,906 | ||
| IS43DR16320B-3DBLI | DDR DRAM, 32MX16, 0.45ns | ISSI | Obsolete | 3~7 Days | 7,668 | |
| K4T51163QE-ZCE6 | 0.45 ns latency | SAMSUNG | 3~7 Days | 7,555 | ||
| HY5PS561621AFP-25 | Cutting-edge DDR Synchronous Dynamic Random Access Memory module | HYNIX | 3~7 Days | 7,891 | ||
| MT47H64M16HR-37E | MT47H64M16HR-37E is a high-performance DDR2 SDRAM chip with 1Gb density and 800Mbps speed. | MICRON | 3~7 Days | 4,197 | ||
| W971GG6KB-25I | IC DRAM 1GBIT PARALLEL 84WBGA | WINBOND | 3~7 Days | 6,940 | ||
| IS46DR16320D-25DBLA1-TR | DRAM Chip DDR2 SDRAM 512Mbit | ISSI, Integrated Silicon Solution Inc | NRND | 3~7 Days | 5,699 | |
| IS46DR16320C-3DBLA2 | IC DRAM 512MBIT PAR 84TWBGA | ISSI, Integrated Silicon Solution Inc | NRND | 3~7 Days | 9,056 | |
| IS43DR16320E-3DBLI-TR | Advanced Memory Solution for Data Center | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 7,832 | |
| AD9977BBCZRL | AFE General Purpose 2 ADC 14bit 1.8V 84-Pin CSP-BGA T/R | Analog Devices Inc. | ACTIVE | 3~7 Days | 8,206 | |
| IS43DR16128C-3DBLI-TR | Gbit DRAM chip DDR2 SDRAM | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 8,054 | |
| IS43DR16128C-3DBL-TR | DRAM chip utilizing DDR2 SDRAM technology, providing a 2-gigabit capacity in a 128Mx16 configuration, with a voltage requirement of 1 | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 7,691 | |
| IS46DR16320D-3DBLA2-TR | Advanced AEC-Qqualified product for ruggedized industrial us | Issi | 3~7 Days | 4,430 | ||
| IS46DR16160B-25DBLA1-TR | Compact -Pin TWBGA Package, Low Power Consumption, High-Speed Data Transfer - Tape and Ree | Issi | 3~7 Days | 7,373 | ||
| IS43DR16320D-3DBLI-TR | Low-power consumption and high-speed performance make this chip ideal for modern systems | Issi | 3~7 Days | 2,363 | ||
| IS43DR16640C-3DBL-TR | Advanced SDRAM module in a compact .m packag | Issi | 3~7 Days | 7,866 | ||
| IS43DR16320D-25DBL-TR | High-performance, low-power consumption memory for robotics and automation | Issi | 3~7 Days | 3,530 | ||
| IS43DR16320E-3DBL-TR | Compact -ball BGA package for space-constrained applicatio | Issi | 3~7 Days | 3,637 | ||
| IS43DR16320E-25DBL-TR | RoHS-compliant SDRAM TWBGA-84(8x12.5) IS43DR16320E-25DBL-TR | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 8,629 | |
| IS46DR16640C-25DBLA2 | High-performance DDRmemory module for automotive applications, suitable for -°C to C temperature | Issi | 3~7 Days | 4,856 | ||
| IS46DR16320E-25DBLA2 | High-performance, low-power memory module for automotive device | Issi | 3~7 Days | 2,026 | ||
| IS43DR16160B-3DBL | Premium quality DRAM chip for reliable performance and scalability | Issi | 3~7 Days | 2,320 | ||
| IS43DR16640B-25DBL-TR | 1G DDR2 DRAM, 400MHz, 1.8v | ISSI, Integrated Silicon Solution Inc | NRND | 3~7 Days | 8,322 | |
| IS43DR16640B-3DBL-TR | Product description for IS43DR16640B-3DBL-TR | ISSI, Integrated Silicon Solution Inc | NRND | 3~7 Days | 5,118 | |
| IS46DR16640B-25DBLA1-TR | High-capacity DRAM chip for demanding applicatio | Issi | 3~7 Days | 2,459 | ||
| IS43DR16128C-25DBLI-TR | Low-power, high-capacity SDRAM chip for industrial automation | Issi | 3~7 Days | 5,595 | ||
| IS46DR16320E-3DBLA1-TR | Designed for high-capacity storage, this module provides a seamless integration for computing systems | Issi | 3~7 Days | 3,506 | ||
| IS46DR16320E-3DBLA1 | Reliable DDR2 SDRAM solution for demanding systems | Issi | 3~7 Days | 7,186 | ||
| IS46DR16320E-25DBLA2-TR | High-performance DDRSDRAM memory solution for automotive applications | Issi | 3~7 Days | 2,359 | ||
| IS46DR16320E-25DBLA1-TR | The IS46DR16320E-25DBLA1-TR is designed for use in a variety of electronic devices requiring high-speed, low-power memory solutions | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 5,520 | |
| IS46DR16640C-3DBLA2 | Powerful DDR SDRAM module for robust computing need | Issi | 3~7 Days | 4,602 | ||
| IS43DR16640C-3DBLI | The IS43DR16640C-3DBLI offers high performance and reliability for various electronic devices | Issi, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 8,070 | |
| IS43DR16320D-3DBL | Reliable and efficient DDRSDRAM chip for data-intensive task | Issi | 3~7 Days | 2,692 | ||
| IS46DR16320D-3DBLA2 | High-density memory module featuring 512Mbit DDR2 SDRAM organized in a 32Mx16 configuration, designed for automotive use | ISSI, Integrated Silicon Solution Inc | NRND | 3~7 Days | 9,714 | |
| IS46DR16160B-3DBLA2 | High-performance memory for automotive application | Issi | 3~7 Days | 3,776 | ||
| W971GG6JB-25 | speed memory technology | Winbond Electronics Corp | 3~7 Days | 4,259 |
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