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產品對比: ZXMP6A18KTC vs ZXMP6A13GTA vs ZXMP6A16KTC
隱藏相同的屬性
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全部
零件號
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| Manufacturer | DIODES | Diodes Incorporated | DIODES |
| Package | TO-252-3 | SOT223-5 | TO-252-3 |
| Description | Power MOSFET, P-channel, 10.4A, 60V, 0.055ohm, DPAK-3 package | 390mΩ on-resistance at 900mA | Diodes Inc ZXMP6A16KTC transistor, -60V, 8.2A, P-channel MOSFET |
| Stock | 7162 | 6415 | 3169 |
| Configuration | SINGLE WITH BUILT-IN DIODE | Single | 85 mOhm @ 2.9A, 10V |
| Product Category | MOSFET | MOSFET | FETs - Single |
| Technology | Si | Si | TO-252-3 |
| Series | ZXMP6 | ZXMP6A | ZXMP6A |
| RoHS | Details | Details | |
| Mounting Style | SMD/SMT | SMD/SMT | |
| Package / Case | TO-252-3 | SOT-223-3 | |
| Transistor Polarity | P-Channel | P-Channel | |
| Number of Channels | 1 Channel | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 60 V | 60 V | |
| Id - Continuous Drain Current | 10.4 A | 2.3 A | |
| Rds On - Drain-Source Resistance | 55 mOhms | 390 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | 1 V | |
| Qg - Gate Charge | 44 nC | 5.9 nC | |
| Minimum Operating Temperature | - 55 C | - 55 C | |
| Maximum Operating Temperature | + 150 C | + 150 C | |
| Pd - Power Dissipation | 10.1 W | 3.9 W | |
| Channel Mode | Enhancement | Enhancement | |
| Brand | Diodes Incorporated | Diodes Incorporated | |
| Fall Time | 23 ns | 5.7 ns | |
| Forward Transconductance - Min | 8.7 S | 1.8 S | |
| Height | 2.39 mm | 1.65 mm | |
| Length | 6.73 mm | 6.7 mm | |
| Product Type | MOSFET | MOSFET | |
| Rise Time | 5.8 ns | 2.2 ns | |
| Factory Pack Quantity | 2500 | 1000 | |
| Subcategory | MOSFETs | MOSFETs | |
| Transistor Type | 1 P-Channel | 1 P-Channel | |
| Typical Turn-Off Delay Time | 55 ns | 11.2 ns | |
| Typical Turn-On Delay Time | 4.6 ns | 1.6 ns | |
| Width | 6.22 mm | 3.7 mm | |
| Unit Weight | 0.011640 oz | 0.003951 oz | |
| Rohs Code | Yes | ||
| Part Life Cycle Code | Transferred | ||
| Reach Compliance Code | not_compliant | ||
| ECCN Code | EAR99 | ||
| Additional Feature | LOW THRESHOLD; FAST SWITCHING | ||
| Case Connection | DRAIN | ||
| DS Breakdown Voltage-Min | 60 V | ||
| Drain Current-Max (Abs) (ID) | 10.4 A | ||
| Drain Current-Max (ID) | 10.4 A | ||
| Drain-source On Resistance-Max | 0.055 Ω | ||
| FET Technology | METAL-OXIDE SEMICONDUCTOR | ||
| JESD-30 Code | R-PSSO-G2 | ||
| JESD-609 Code | e3 | ||
| Moisture Sensitivity Level | 1 | ||
| Number of Elements | 1 | ||
| Number of Terminals | 2 | ||
| Operating Mode | ENHANCEMENT MODE | ||
| Operating Temperature-Max | 150 °C | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Shape | RECTANGULAR | ||
| Package Style | SMALL OUTLINE | ||
| Peak Reflow Temperature (Cel) | 260 | ||
| Polarity/Channel Type | P-CHANNEL | ||
| Power Dissipation-Max (Abs) | 10.1 W | ||
| Pulsed Drain Current-Max (IDM) | 37.5 A | ||
| Qualification Status | Not Qualified | ||
| Surface Mount | YES | ||
| Terminal Finish | Matte Tin (Sn) | ||
| Terminal Form | GULL WING | ||
| Terminal Position | SINGLE | ||
| Time@Peak Reflow Temperature-Max (s) | 40 | ||
| Transistor Application | SWITCHING | ||
| Transistor Element Material | SILICON | ||
| REACH | Details | ||
| Packaging | Alternate Packaging | ||
| Unit-Weight | TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| Mounting-Style | Surface Mount | ||
| Package-Case | 1 Channel | ||
| Operating-Temperature | 2.11W | ||
| Mounting-Type | 1021pF @ 30V | ||
| Number-of-Channels | Standard | ||
| Supplier-Device-Package | 5.4A (Ta) | ||
| FET-Type | 1V @ 250μA | ||
| Power-Max | + 150 C | ||
| Transistor-Type | 4.1 ns | ||
| VDSS – Drain-Source Voltage | 20 V | ||
| Input Capacitance | - 1 V | ||
| FET-Feature | 35 ns | ||
| Current-Continuous-Drain-Id-25°C | 7.2 S |
零件號
關鍵字: ZXMP6
零件號 "ZXMP6" 回傅 20 個結果; 所有結果都匹配且頭部為 "ZXMP6".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| ZXMP6A13F |
Check out the description of ZXMP6A13F, a MOSFET operating in P-channel Enhancement Mode:" |
ZETEX | SOT23 | 3~7 天 | 6,065.00 | ||
| ZXMP6A17E6 |
P-Channel Silicon MOSFET |
ZETEX | SOT-23/6 | 3~7 天 | 7,552.00 | ||
| ZXMP6A18DN8 |
Power Field-Effect Transistor, 4.4A I(D), 60V, 0.08ohm, 2-Element |
DIODES INCORPORATED | SOP8 | Unconfirmed | 3~7 天 | 5,306.00 | |
| ZXMP6A17GQTA |
MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm |
Diodes Incorporated | SOT223-3 | Active | 3~7 天 | 5,041.00 | |
| ZXMP6A18K |
MOSFET |
ZETEX | DPAK | Active | 3~7 天 | 4,781.00 | |
| ZXMP6A17G |
MOSFET |
ZETEX | SOT-22 | 3~7 天 | 6,818.00 | ||
| ZXMP6A17E6TA |
ZXMP6A17E6TA is a power transistor designed for use in electronic circuits requiring P-Channel MOSFET functionality |
Diodes Incorporated | SOT-26-6 | ACTIVE | 3~7 天 | 9,475.00 | |
| ZXMP6A17GTA |
SMD transistor with P-Channel configuration and 4-pin (3+Tab) layout |
Diodes Incorporated | SOT223-4 | Active | 3~7 天 | 6,719.00 | |
| ZXMP6A18DN8TA |
P-Channel MOSFETs with 60V rating |
Diodes Incorporated | SOIC-8 | Active | 3~7 天 | 9,934.00 | |
| ZXMP6A13FTA |
Product ZXMP6A13FTA is a P-channel MOSFET with a maximum drain-source voltage of -60V and a continuous drain current of -1.1A |
Diodes Incorporated | SOT23-3 | ACTIVE | 3~7 天 | 9,133.00 | |
| ZXMP6A13FQTA |
Featuring a 60V maximum voltage rating |
Diodes Incorporated | SOT23-3 | ACTIVE | 3~7 天 | 5,098.00 | |
| ZXMP6A17E6QTA |
ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6 |
Diodes Incorporated | SOT26-6 | Active | 3~7 天 | 7,121.00 | |
| ZXMP6A17DN8TA |
MOSFET Dl 60V P-Chnl UMOS |
Diodes Incorporated | SOIC-8 | 3~7 天 | 3,746.00 | ||
| ZXMP6A17KTC |
MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL |
Diodes Incorporated | DPAK-3 | 3~7 天 | 3,504.00 | ||
| ZXMP61P02 |
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ZETEX | SOT23 | 3~7 天 | 30,000.00 | ||
| ZXMP61P02FTA |
|
ZTETX | SOT-23 | 3~7 天 | 36,000.00 | ||
| ZXMP61P03 |
|
ZETEX | SOT23 | 3~7 天 | 30,000.00 | ||
| ZXMP61P03FTA |
|
ZTETX | SOT-23 | 3~7 天 | 36,000.00 | ||
| ZXMP62M832 |
|
ZETEX | MLP832 | 3~7 天 | 5,000.00 | ||
| ZXMP62M832TA |
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ZETEX | MLP8 | 3~7 天 | 9,999.00 |