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產品對比: ZXMP6A13GTA vs ZXMP6A17GQTA vs ZXMP6A13F
隱藏相同的屬性
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零件號
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| Manufacturer | Diodes Incorporated | Diodes Incorporated | ZETEX |
| Package | SOT223-5 | SOT223-3 | SOT23 |
| Description | 390mΩ on-resistance at 900mA | MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm | Check out the description of ZXMP6A13F, a MOSFET operating in P-channel Enhancement Mode:" |
| Stock | 6415 | 5041 | 6065 |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Package / Case | SOT-223-3 | SOT-223-3 | TO-236-3, SC-59, SOT-23-3 |
| Series | ZXMP6A | ZXMP6 | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| REACH | Details | Details | |
| Mounting Style | SMD/SMT | SMD/SMT | |
| Transistor Polarity | P-Channel | P-Channel | |
| Number of Channels | 1 Channel | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 60 V | 60 V | |
| Id - Continuous Drain Current | 2.3 A | 3.5 A | |
| Rds On - Drain-Source Resistance | 390 mOhms | 125 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | 1 V | |
| Qg - Gate Charge | 5.9 nC | 17.7 nC | |
| Minimum Operating Temperature | - 55 C | - 55 C | |
| Maximum Operating Temperature | + 150 C | + 150 C | |
| Pd - Power Dissipation | 3.9 W | 16 W | |
| Channel Mode | Enhancement | Enhancement | |
| Configuration | Single | Single | |
| Fall Time | 5.7 ns | 11.3 ns | |
| Forward Transconductance - Min | 1.8 S | 4.7 S | |
| Rise Time | 2.2 ns | 3.4 ns | |
| Factory Pack Quantity | 1000 | 1000 | |
| Transistor Type | 1 P-Channel | 1 P-Channel | |
| Typical Turn-Off Delay Time | 11.2 ns | 26.2 ns | |
| Typical Turn-On Delay Time | 1.6 ns | 2.6 ns | |
| Unit Weight | 0.003951 oz | 0.003951 oz | |
| RoHS | Details | ||
| Height | 1.65 mm | ||
| Length | 6.7 mm | ||
| Width | 3.7 mm | ||
| Qualification | AEC-Q101 | ||
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | ||
| Mfr | Diodes Incorporated | ||
| Product Status | Active | ||
| FET Type | P-Channel | ||
| Drain to Source Voltage (Vdss) | 60 V | ||
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) | ||
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | ||
| Rds On (Max) @ Id, Vgs | 400mOhm @ 900mA, 10V | ||
| Vgs(th) (Max) @ Id | 3V @ 250µA | ||
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 10 V | ||
| Vgs (Max) | ±20V | ||
| Input Capacitance (Ciss) (Max) @ Vds | 219 pF @ 30 V | ||
| FET Feature | - | ||
| Power Dissipation (Max) | 625mW (Ta) | ||
| Operating Temperature | -55°C ~ 150°C (TJ) | ||
| Mounting Type | Surface Mount | ||
| Supplier Device Package | SOT-23-3 | ||
| Base Product Number | ZXMP6A13 |
零件號
關鍵字: ZXMP6
零件號 "ZXMP6" 回傅 20 個結果; 所有結果都匹配且頭部為 "ZXMP6".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| ZXMP6A16KTC |
Diodes Inc ZXMP6A16KTC transistor, -60V, 8.2A, P-channel MOSFET |
DIODES | TO-252-3 | Active | 3~7 天 | 3,169.00 | |
| ZXMP6A18KTC |
Power MOSFET, P-channel, 10.4A, 60V, 0.055ohm, DPAK-3 package |
DIODES | TO-252-3 | Active | 3~7 天 | 7,162.00 | |
| ZXMP6A17E6 |
P-Channel Silicon MOSFET |
ZETEX | SOT-23/6 | 3~7 天 | 7,552.00 | ||
| ZXMP6A18DN8 |
Power Field-Effect Transistor, 4.4A I(D), 60V, 0.08ohm, 2-Element |
DIODES INCORPORATED | SOP8 | Unconfirmed | 3~7 天 | 5,306.00 | |
| ZXMP6A18K |
MOSFET |
ZETEX | DPAK | Active | 3~7 天 | 4,781.00 | |
| ZXMP6A17G |
MOSFET |
ZETEX | SOT-22 | 3~7 天 | 6,818.00 | ||
| ZXMP6A17E6TA |
ZXMP6A17E6TA is a power transistor designed for use in electronic circuits requiring P-Channel MOSFET functionality |
Diodes Incorporated | SOT-26-6 | ACTIVE | 3~7 天 | 9,475.00 | |
| ZXMP6A17GTA |
SMD transistor with P-Channel configuration and 4-pin (3+Tab) layout |
Diodes Incorporated | SOT223-4 | Active | 3~7 天 | 6,719.00 | |
| ZXMP6A18DN8TA |
P-Channel MOSFETs with 60V rating |
Diodes Incorporated | SOIC-8 | Active | 3~7 天 | 9,934.00 | |
| ZXMP6A13FTA |
Product ZXMP6A13FTA is a P-channel MOSFET with a maximum drain-source voltage of -60V and a continuous drain current of -1.1A |
Diodes Incorporated | SOT23-3 | ACTIVE | 3~7 天 | 9,133.00 | |
| ZXMP6A13FQTA |
Featuring a 60V maximum voltage rating |
Diodes Incorporated | SOT23-3 | ACTIVE | 3~7 天 | 5,098.00 | |
| ZXMP6A17E6QTA |
ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6 |
Diodes Incorporated | SOT26-6 | Active | 3~7 天 | 7,121.00 | |
| ZXMP6A17DN8TA |
MOSFET Dl 60V P-Chnl UMOS |
Diodes Incorporated | SOIC-8 | 3~7 天 | 3,746.00 | ||
| ZXMP6A17KTC |
MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL |
Diodes Incorporated | DPAK-3 | 3~7 天 | 3,504.00 | ||
| ZXMP61P02 |
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ZETEX | SOT23 | 3~7 天 | 30,000.00 | ||
| ZXMP61P02FTA |
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ZTETX | SOT-23 | 3~7 天 | 36,000.00 | ||
| ZXMP61P03 |
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ZETEX | SOT23 | 3~7 天 | 30,000.00 | ||
| ZXMP61P03FTA |
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ZTETX | SOT-23 | 3~7 天 | 36,000.00 | ||
| ZXMP62M832 |
|
ZETEX | MLP832 | 3~7 天 | 5,000.00 | ||
| ZXMP62M832TA |
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ZETEX | MLP8 | 3~7 天 | 9,999.00 |