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產品對比: 2N7002KTB_R1_00001 vs 2N7002KWA-TP vs 2N7002KDW-TPQ2
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零件號
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| Manufacturer | Panjit | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Package | SOT-523-3 | SOT-323 | SOT-363 |
| Description | MOSFET 60V N-Channel Enhancement Mode MOSFET - ESD Protected | MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW | 300mW Power Dissipation Capability Mosfet Array |
| Stock | 6848 | 6155 | 5067 |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Details | Details | Details |
| Brand | Panjit | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Technology | Si | Si | |
| Mounting Style | SMD/SMT | SMD/SMT | |
| Package / Case | SOT-523-3 | SOT-323-3 | |
| Transistor Polarity | N-Channel | N-Channel | |
| Number of Channels | 1 Channel | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 60 V | 60 V | |
| Id - Continuous Drain Current | 115 mA | 340 mA | |
| Rds On - Drain-Source Resistance | 4 Ohms | 5 Ohms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | 1 V | |
| Minimum Operating Temperature | - 55 C | - 55 C | |
| Maximum Operating Temperature | + 150 C | + 150 C | |
| Pd - Power Dissipation | 200 mW | 200 mW | |
| Series | NFET-035TB | N-Ch Polarity | |
| Configuration | Single | Single | |
| Transistor Type | 1 N-Channel | 1 N- Channel | |
| Typical Turn-Off Delay Time | 125 ns | 15 ns | |
| Typical Turn-On Delay Time | 20 ns | 10 ns | |
| Unit Weight | 0.000071 oz | 0.000212 oz | |
| Qg - Gate Charge | 800 pC | ||
| Channel Mode | Enhancement |
零件號
關鍵字: 2N700
零件號 "2N700" 回傅 23 個結果; 所有結果都匹配且頭部為 "2N700".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| 2N7002BKS,115 |
channel trenchMOS FET |
Nexperia | TSSOP-6 | 3~7 天 | 6,853.00 | ||
| 2N7002W |
Small Signal MOSFET 60V 340mA 1.6 Ohm Single N-Channel SC-70, 3000-REEL |
Onsemi | SC-70 | 3~7 天 | 3,473.00 | ||
| 2N7002E-T1-GE3 |
Reel-packaged N-channel transistor with a 60V voltage rating, 0.24A current capacity, and SOT-23 configuration |
VISHAY | SOT | Active | 3~7 天 | 4,620.00 | |
| 2N7000KL |
2N7000KL is an N-channel enhancement mode MOSFET transistor used for switching and amplifying signals. |
VISHAY | TO-92 | 3~7 天 | 6,191.00 | ||
| 2N7002KW |
MOSFET NCHAN Enhance MOSFET |
Onsemi | SC-70 | Active | 3~7 天 | 9,494.00 | |
| 2N7002DW |
Dual NPN Metal Oxide Semiconductor Field-Effect Transistor |
Infineon | SOT-363 dual | Active | 3~7 天 | 7,950.00 | |
| 2N7002K |
Ideal for use in a variety of electronic applications requiring efficient power management |
Onsemi | SOT23 (Standard) | Active | 3~7 天 | 5,721.00 | |
| 2N7002-7-F |
Surface mount SOT-23 package with 3 pins |
Diodes Incorporated | SOT23-3 | obsolete | 3~7 天 | 7,387.00 | |
| 2N7000 |
MOSFET |
Diodes Incorporated | TO-92-3 | Obsolete | 3~7 天 | 100.00 | |
| 2N7002,215 |
The 2N7002,215 MOSFET is designed for TO-236AB packaging, making it suitable for various applications |
Nexperia | SOT23-3 | 3~7 天 | 5,575.00 | ||
| 2N7002E |
MOSFET N-CH 60V 240MA SOT23-3 |
VISHAY SILICONIX | SOT-23 | 3~7 天 | 7,996.00 | ||
| 2N7002BKW,115 |
2N7002BKW 60V, 310mA |
Nexperia Usa Inc. | SOT23-3 | ACTIVE | 3~7 天 | 6,396.00 | |
| 2N7002PV,115 |
Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-666 T/R |
NEXPERIA | SOT-666-6 | NRND | 3~7 天 | 6,890.00 | |
| 2N7002BKV,115 |
Non Recommended for New Designs |
Nexperia Usa Inc. | SOT666-6 | 3~7 天 | 5,564.00 | ||
| 2N7002K-T1-GE3 |
Product 2N7002K-T1-GE3 is an N-channel MOSFET with ESD protection, capable of handling 0 |
Vishay | SOT23-3 | ACTIVE | 3~7 天 | 5,325.00 | |
| 2N7002K-T1 |
Enhancement-mode transistor |
SILICONIX | SOT | 3~7 天 | 6,600.00 | ||
| 2N7002LT3G |
SOT23, N-Channel MOSFET - 60V 115MA 7.5Ohm SOT23, N-Ch Mosfet - 60V 115MA 7.5O, SOT-23 (TO-236) 3 LEAD, 10000-REEL |
Onsemi | SOT23-3 | 3~7 天 | 6,750.00 | ||
| 2N7002KT1G |
N-channel small signal MOSFET with a 60V voltage rating, capable of handling currents up to 380mA with a low on-resistance of 1.6 Ω |
Onsemi | SOT23-3 | ACTIVE | 3~7 天 | 5,655.00 | |
| 2N7002ET1G |
SOT-23 MOSFET with N-channel configuration, capable of handling 60V voltage and 0.26A current, designed by ON Semiconductor |
Onsemi | SOT23-3 | Active | 3~7 天 | 7,925.00 | |
| 2N7002WT1G |
High-gain amplifier for low-power application |
Onsemi | SC-70-3 | 3~7 天 | 4,379.00 | ||
| 2N7002VA |
N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω, 3000-REEL |
Onsemi | SOT-563 | 3~7 天 | 6,101.00 | ||
| 2N7002T |
MOSFET N-Chan Enhancement Mode Field Effect |
Onsemi | SOT-523FL | Active | 3~7 天 | 8,772.00 | |
| 2N7002LT1G |
N-Channel Silicon MOSFET, TO-236 Package, 60V, 0.115A Drain Current |
Onsemi | SOT23-3 | 3~7 天 | 4,247.00 |