NTE2633
frequency NPN transistor TO-126
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製造商零件號 # : NTE2633
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包裝/封裝: TSSOP
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零件狀態 : ACTIVE
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製造商: NTE
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產品分類 : Bipolar RF Transistors
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NTE2633 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $5.207 | $5.21 |
200 | $2.079 | $415.80 |
500 | $2.010 | $1,005.00 |
1000 | $1.974 | $1,974.00 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
NTE2633 is an RF transistor that falls under the NPN category, designed for use in high-frequency applications. It has a maximum voltage rating of 95V and a maximum current rating of 300mA, making it suitable for medium-power RF amplification needs. The transistor is capable of operating at frequencies up to 1.2GHz and can handle power levels up to 3W, making it ideal for a range of RF applications. The transistor comes in a Through Hole TO-126 package, which allows for easy installation on a printed circuit board or other electronic devices. The TO-126 package also provides good thermal conductivity, allowing for efficient heat dissipation during operation. NTE2633 is a reliable and durable component, designed to provide consistent performance across a range of operating conditions. Its NPN configuration allows for easy integration into existing circuit designs, while its high-frequency capabilities make it suitable for use in a variety of RF applications, such as amplifiers, oscillators, and transmitters.
主要特徵
- Designed for general purpose amplifier applications
- Low collector-base voltage (VCBO = 30V)
- High current (IC = 800mA)
- Low saturation voltage (VCE(sat) = 0.5V)
- Complementary NPN transistor to NTE2634
- TO-92 package for easy mounting and soldering
應用
- LED lighting systems
- TV backlights
- Automotive lighting
- Signs and displays
- Decorative lighting
- Signage lighting
- Architectural lighting
- General lighting applications
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Part Life Cycle Code | Active | Reach Compliance Code | |
ECCN Code | EAR99 | Collector Current-Max (IC) | 0.3 A |
Collector-Base Capacitance-Max | 2 pF | Collector-Emitter Voltage-Max | 95 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 20 |
Highest Frequency Band | HIGH FREQUENCY BAND | JEDEC-95 Code | TO-126 |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 175 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | NPN |
Power Dissipation-Max (Abs) | 3 W | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Form ! | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 1200 MHz |
Package | Bag | Product Status | Active |
Transistor Type | NPN | Voltage - Collector Emitter Breakdown (Max) | 95V |
Frequency - Transition | 1.2GHz | Power - Max | 3W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V | Current - Collector (Ic) (Max) | 300mA |
Operating Temperature ! | 175°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 | Supplier Device Package | TO-126 |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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