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NSS1C301ET4G
Bipolar Transistors - BJT 100 V, 3 A, Low VCE(sat) NPN Transistor
NSS1C301ET4G
Bipolar Transistors - BJT 100 V, 3 A, Low VCE(sat) NPN Transistor
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NSS1C301ET4G 數據表
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
100 V, 3.0 A, Low VCE(sat) NPN TransistorON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.Features• Complement to NSS1C300ET4G• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable• These Devices are Pb−Free and are RoHS Compliant
主要特徵
- Fully Qualified for Automotive and Industrial Applications
- AEC-Q100 Qualified with PPAP Capability
- Pb-Free and RoHS Compliant Devices Available
- Designed for High-Temperature and High-Reliability Requirements
- Meets or Exceeds All Relevant Industry and Government Standards
- AEC-Q101 Qualified with Unique Site and Control Change Requirements
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Status | Active | CAD Models | |
| Compliance | PbAHP | Package Type | DPAK-3 |
| Case Outline | 369C | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 2500 | ON Target | Y |
| Polarity | NPN | Type | Low VCE(sat) |
| VCE(sat) Max (V) | 0.25 | IC Cont. (A) | 3 |
| VCEO Min (V) | 100 | VCBO (V) | 140 |
| VEBO (V) | 6 | VBE(sat) (V) | 1 |
| VBE(on) (V) | 0.9 | hFE Min | 120 |
| hFE Max | 360 | PTM Max (W) | 12.5 |
| Pricing ($/Unit) | $0.2267Sample |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is NSS1C301ET4G?
The NSS1C301ET4G is an N-channel Power MOSFET transistor manufactured by ON Semiconductor. It is designed for high-power applications where efficient power switching and amplification are required, such as motor control, power supplies, and lighting systems.
How Does NSS1C301ET4G Work?
The NSS1C301ET4G operates as a power transistor that controls the flow of current between the source and drain terminals by applying a gate voltage. When a suitable gate voltage is applied, the MOSFET allows current to flow through, enabling power amplification or switching functions. It offers low on-resistance and high current handling capability for efficient power management.
How Many Pins does NSS1C301ET4G have and What are the Functions of the Pinout Configuration?
The NSS1C301ET4G is housed in a 3-pin DPAK (TO-252) package. The pinout configuration includes:
- GATE: Gate terminal for controlling the MOSFET.
- DRAIN: Drain terminal for power output.
- SOURCE: Source terminal for power input/ground connection.
What are the Pros and Cons of NSS1C301ET4G?
Pros:
- High Current Handling: Capable of handling high power and current levels.
- Low On-Resistance: Offers efficient power management with low voltage drops.
- Reliability: Manufactured by ON Semiconductor, known for quality and reliability.
- Compact Package: DPAK package provides good thermal performance and easy PCB mounting.
Cons:
- Drive Voltage Required: Requires a suitable gate drive voltage for proper operation.
- Heat Dissipation: May require additional heat sinking for high-power applications.
- Protection Circuits: External protection circuits may be needed to safeguard against overcurrent or overvoltage conditions.
Are There Any Equivalents/Alternatives to NSS1C301ET4G for Recommendation?
- Alternative options to the NSS1C301ET4G include the IRF540N from Infineon Technologies and the FDP8870 from Fairchild Semiconductor.
- If higher power handling is required, the IRFP460 from Infineon Technologies or the STP75NF75 from STMicroelectronics can be considered as equivalents.
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