K4S561632J-UC75

Name: K4S561632J-UC75
Rating: 4.5 (10 reviews)

Compact 54-pin Thin Small Outline Package (TSOP-II) design, suitable for use in a variety of electronic devices

3,251 有效庫存

K4S561632J-UC75

有效庫存3,251

Compact 54-pin Thin Small Outline Package (TSOP-II) design, suitable for use in a variety of electronic devices

製造商零件號 # : K4S561632J-UC75
包裝/封裝: TSOP-II
製造商: Samsung Electro-Mechanics
產品分類 : Memory

品質保證

從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。此外，我們還保存這些檢查的詳細記錄，以確保整個供應鏈的透明度和可追溯性。

認證

我們已成功獲得各項認證標準，並建立了自己的專業檢測實驗室。這確保了我們向客戶提供的每件產品都符合最高的品質標準。我們遵守嚴格的測試協議，以保持我們產品的一致性和準確性。為了確保我們的產品是原裝正品，我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。

運輸與付款

關於運送

我們通常會在幾個工作日內通過可靠的運輸公司（例如 FedEx、SF、UPS 或 DHL）運送訂單。我們還支持其他運輸方式。如果您想詢問具體的運輸細節或費用，請隨時與我們聯繫。

關於付款

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如果您有特定的付款方式或想詢問費率和其他詳細信息，請隨時與我們聯繫。

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服務與包裝

About After Sales Service

All Parts Extended Quality Guarantee

自發貨之日起 90 天內發起申請。

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關於包裝

在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。外包裝堅固耐用且閉合牢固。我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。

例子

捲帶式

剪膠帶

管或託盤

K4S561632J-UC75 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

快速報價

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詳細說明

Samsung's K4S561632J-UC75 SDRAM module is designed to meet the demands of modern computing. Boasting a CAS latency of 3, this module minimizes delays in data retrieval, enhancing overall system performance. The burst read and write operations supported by this module ensure quick data access, making it a valuable addition to any system requiring high-speed memory solutions

主要特徵

Operates at 2.5V voltage level
Available in TSOP and FBGA packages
Features burst length control
Promotes efficient data transfer
Maintains CAS latency flexibility

應用

Speeds up data retrieval
Optimizes system efficiency
Maximizes device potential

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Pbfree Code	Yes	Rohs Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code !	8542.32.00.24
Access Time-Max	5.4 ns	Clock Frequency-Max (fCLK)	133 MHz
I/O Type	COMMON	Interleaved Burst Length	1,2,4,8
JESD-30 Code	R-PDSO-G54	JESD-609 Code	e6
Memory Density	268435456 bit	Memory IC Type	SYNCHRONOUS DRAM
Memory Width	16	Moisture Sensitivity Level	2
Number of Terminals	54	Number of Words	16777216 words
Number of Words Code	16000000	Operating Temperature-Max	70 °C
Operating Temperature-Min		Organization	16MX16
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	TSOP	Package Equivalence Code	TSOP54,.46,32
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)	260	Power Supplies !	3.3 V
Qualification Status !	Not Qualified	Refresh Cycles	8192
Sequential Burst Length	1,2,4,8,FP	Standby Current-Max	0.002 A
Supply Current-Max	0.12 mA	Supply Voltage-Nom (Vsup)	3.3 V
Surface Mount !	YES	Technology	CMOS
Temperature Grade !	COMMERCIAL	Terminal Finish	TIN BISMUTH
Terminal Form !	GULL WING	Terminal Pitch !	0.8 mm
Terminal Position	DUAL

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 K4S561632J-UC75 PDF 下載

常見問題解答

What is K4S561632J-UC75?

The K4S561632J-UC75 is a 512M bit DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) module designed and manufactured by Samsung. It is commonly used in computer systems, networking equipment, and other digital devices that require high-speed memory for data storage and processing.

How Does K4S561632J-UC75 Work?

The K4S561632J-UC75 works by providing high-speed access to stored data and allowing for simultaneous reading and writing operations. With its double data rate feature, the module transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM.

How Many Pins does K4S561632J-UC75 have and What are the Functions of the Pinout Configuration?

The K4S561632J-UC75 is typically available in a 66-pin TSOP (Thin Small Outline Package) form factor. The pinout configuration includes:

DQ: Data input/output pins for bi-directional communication.
CLK: Clock input pin for synchronization.
CS: Chip select pin for device activation.
WE: Write enable pin for initiating write operations.
CAS, RAS: Column address strobe and row address strobe pins for memory access control.
BA0-BA1: Bank address pins for selecting memory bank.
DM: Data mask pins for write operation masking.
VDD, VSS: Power supply and ground pins, respectively.

What are the Pros and Cons of K4S561632J-UC75?

Pros:

High Data Transfer Rate: Provides high-speed data transfer for improved system performance.
Low Power Consumption: Operates with low power consumption, making it energy-efficient.
Industry Standard: Conforms to industry-standard SDRAM specifications for compatibility.
High Density: Offers a large memory capacity for data storage and processing.

Cons:

Complex Interface: Requires careful timing and control signals for proper operation.
Signal Integrity: Susceptible to signal integrity issues if not carefully designed into the system.
Compatibility Requirements: May require specific controller support and system design considerations for optimal performance.

Are There Any Equivalents/Alternatives to K4S561632J-UC75 for Recommendation?

Equivalent parts to the K4S561632J-UC75 include the MT47H64M16HR-25E:H from Micron and the IS42S16160J-7TLI from Integrated Silicon Solution, Inc. (ISSI).
Alternatives to the K4S561632J-UC75 include the H5TC4G63AFR-PBA from SK Hynix and the W971GG6JB-25 from Winbond.