K4S281632E-TC75
High-speed DRAM for memory-intensive applications with low power consumptionK4S281632E-TC75
High-speed DRAM for memory-intensive applications with low power consumption
-
製造商零件號 # : K4S281632E-TC75
-
製造商: Samsung Semiconductor
-
產品分類 : Memory
品質保證
品質保證
從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。 這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。 此外,我們還保存這些檢查的詳細記錄,以確保整個供應鏈的透明度和可追溯性。
![ship1](/img/ship1.png)
![ship2](/img/ship2.png)
![ship3](/img/ship3.png)
![ship4](/img/ship4.png)
![ship5](/img/ship5.png)
![ship6](/img/ship6.png)
認證
我們已成功獲得各項認證標準,並建立了自己的專業檢測實驗室。 這確保了我們向客戶提供的每件產品都符合最高的品質標準。 我們遵守嚴格的測試協議,以保持我們產品的一致性和準確性。 為了確保我們的產品是原裝正品,我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。 我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。
運輸與付款
運輸與付款
關於運送
我們通常會在幾個工作日內通過可靠的運輸公司(例如 FedEx、SF、UPS 或 DHL)運送訂單。 我們還支持其他運輸方式。 如果您想詢問具體的運輸細節或費用,請隨時與我們聯繫。
![questionContent1](/img/questionContent1.png)
![questionContent2](/img/questionContent2.png)
![questionContent3](/img/questionContent3.png)
![questionContent4](/img/questionContent4.png)
![ctc](/img//questionContentctc.png)
![pelican](/img//questionContentpelican.png)
![express](/img//questionContentexpress.png)
![chunghwa post](/img//questionContentchunghwapost.png)
關於付款
我們接受多種支付方式,包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。
如果您有特定的付款方式或想詢問費率和其他詳細信息,請隨時與我們聯繫。
![wire](/img/wire.png)
電匯
![questionContent7](/img/questionContent7.png)
Paypal
![cc](/img/cc.png)
信用卡
![western](/img/western.png)
西聯匯款
![mg](/img/mg.png)
速匯金
服務與包裝
服務與包裝
About After Sales Service
All Parts Extended Quality Guarantee
自發貨之日起 90 天內發起申請。
與我們的工作人員確認退貨或換貨。
保持貨物收到時的原始狀態。
最後請注意,退貨或換貨的資格取決於對退貨商品實際狀況的評估。 在完成退貨或換貨流程之前,我們將評估收到的貨物。 如果您對退貨或換貨有任何疑問或需要進一步幫助,請隨時通過以下方式聯絡我們: [email protected]
關於包裝
在包裝方面,我們的產品均精心包裝在防靜電袋中,以提供ESD防靜電保護。 外包裝堅固耐用且閉合牢固。 我們支持各種包裝方法,例如捲帶式、切帶式、管式或託盤式。
![pg](/img/pg.png)
例子
![捲帶式](/img/Tape and Reel.png)
捲帶式
![剪膠帶](/img/Cut Tape.png)
剪膠帶
![管或託盤](/img/Tube or Tray.png)
管或託盤
K4S281632E-TC75 數據表
![no-price](/img/no-price.jpg)
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
Introduction to K4S281632E-TC75
The K4S281632E-TC75 is a synchronous dynamic random-access memory (SDRAM) IC manufactured by Samsung. This IC is designed for high-speed data storage and retrieval in various electronic systems. With a capacity of 128M-bit, the K4S281632E-TC75 offers fast data access times and high bandwidth, making it suitable for use in applications requiring large memory and rapid data processing.
Specs and Features
- Memory Type: Synchronous dynamic random-access memory (SDRAM) with 128M-bit capacity.
- Data Rate: Offers high-speed data transfer rates for efficient memory operations.
- Operating Voltage: Supports standard voltage levels for compatibility with various electronic systems.
- Data Bus Width: Organized as 16M words x 4 bits or 8M words x 8 bits for flexible data handling.
- Row Cycle Time: Provides fast row cycle time for quick activation of memory rows.
- Package Type: Available in industry-standard TSOP (Thin Small-Outline Package) for space-efficient PCB layout.
Application and Uses
The K4S281632E-TC75 is ideal for applications requiring high-speed memory access:
- Computer Systems: Integrated into PCs, laptops, and workstations for main memory and cache applications.
- Networking Equipment: Used in routers, switches, and network appliances for data buffering and packet processing.
- Telecommunication Systems: Applied in base stations and communication infrastructure for fast data handling and storage.
- Graphics and Video Processing: Utilized in graphics cards and video processing units for quick frame buffering and data storage.
Equivalent Part
For similar functionalities, consider these alternatives to the K4S281632E-TC75:
- MT48LC16M16A2: Synchronous DRAM IC with comparable capacity and data transfer rates for high-performance applications.
- IS42S16100E: Synchronous DRAM IC offering high-speed data access and flexible data bus configurations for memory-intensive systems.
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | No | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | Part Package Code | TSOP2 |
Package Description | TSOP2, TSOP54,.46,32 | Pin Count ! | 54 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.02 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 5.4 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 133 MHz | I/O Type | COMMON |
Interleaved Burst Length | 1,2,4,8 | JESD-30 Code | R-PDSO-G54 |
JESD-609 Code | e0 | Length | 22.22 mm |
Memory Density | 134217728 bit | Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 54 |
Number of Words | 8388608 words | Number of Words Code | 8000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 70 °C |
Organization | 8MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | 240 |
Power Supplies ! | 3.3 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 4096 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 1,2,4,8 |
Standby Current-Max | 0.002 A | Supply Current-Max | 0.2 mA |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Finish | Tin/Lead (Sn/Pb) | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.8 mm | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Width | 10.16 mm |
推薦零件
-
9,033 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
K4A8G165WB-BIRC
$12.626 Our K4A8G165WB-BIRC memory chip offers unparalleled storage capacity and low power consumption, making it an ideal choice for emerging technologies
製造商: Samsung Electronics 包裝/箱: FBGA
8,452 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
7,207 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
8,572 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
8,358 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
K4AAG085WA-BCTD
$6.831 High-density 16Gbit DDR4 SDRAM for computing devices
製造商: Samsung Electronics 包裝/箱: FBGA
5,320 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
High-performance DRAM chip for demanding applications requiring massive memory capacity and low power consumptio
製造商: Samsung Electronics 包裝/箱: FBGA
6,578 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
K4A4G165WE-BCWE
$5.123 96-Pin FBGA DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V
製造商: Samsung Electronics 包裝/箱: FBGA
8,522 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA T/R
製造商: Samsung Electronics 包裝/箱: FBGA
7,574 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
8,858 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
6,373 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
7,631 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
DDR3 SDRAM DRAM Chip 2Gbit 256Mx8 1.5V 78-Pin FBGA
製造商: Samsung Electronics 包裝/箱: FBGA
6,853 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
5,705 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Advanced DRAM chip designed for high-speed data processing with 256Mx8 configuration"
製造商: Samsung Electronics 包裝/箱: FBGA
9,709 有存貨
貨物週期: 3~7 天
最小訂購量為 1