K4D261638E-TC40
DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, TSOP2-66
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K4D261638E-TC40 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
GENERAL DESCRIPTIONFOR 1M x 32Bit x 4 Bank DDR SDRAMThe K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.FEATURES• 2.5V ± 5% power supply• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave)• Full page burst length for sequential burst type only• Start address of the full page burst should be even• All inputs except data & DM are sampled at the positive going edge of the system clock• Differential clock input• No Write Interrupted by Read function• Data I/O transactions on both edges of Data strobe• DLL aligns DQ and DQS transitions with Clock transition• Edge aligned data & data strobe output• Center aligned data & data strobe input• DM for write masking only• Auto & Self refresh• 32ms refresh period (4K cycle)• 100pin TQFP package• Maximum clock frequency up to 250MHz• Maximum data rate up to 500Mbps/pin
主要特徵
- 2.5V ± 5% power supply
- SSTL_2 compatible inputs/outputs
- 4 banks operation
- MRS cycle with address key programs
- -. Read latency 3,4 (clock)
- -. Burst length (2, 4, 8 and Full page)
- -. Burst type (sequential & interleave)
- Full page burst length for sequential burst type only
- Start address of the full page burst should be even
- All inputs except data & DM are sampled at the positive going edge of the system clock
- Differential clock input
- No Write Interrupted by Read function
- Data I/O transactions on both edges of Data strobe
- DLL aligns DQ and DQS transitions with Clock transition
- Edge aligned data & data strobe output
- Center aligned data & data strobe input
- DM for write masking only
- Auto & Self refresh
- 32ms refresh period (4K cycle)
- 100pin TQFP package
- Maximum clock frequency up to 250MHz
- Maximum data rate up to 500Mbps/pin
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | No | Part Life Cycle Code | Obsolete |
Part Package Code | TSOP2 | Pin Count ! | 66 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.02 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 0.6 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 250 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e0 | Length | 22.22 mm |
Memory Density | 134217728 bit | Memory IC Type | DDR1 DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 66 |
Number of Words | 8388608 words | Number of Words Code | 8000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 65 °C |
Operating Temperature-Min | Organization | 8MX16 | |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP2 | Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Power Supplies ! | 2.5 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 4096 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 2,4,8 |
Standby Current-Max | 0.07 A | Supply Current-Max | 0.34 mA |
Supply Voltage-Max (Vsup) | 2.625 V | Supply Voltage-Min (Vsup) | 2.375 V |
Supply Voltage-Nom (Vsup) | 2.5 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Finish | TIN LEAD | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.65 mm | Terminal Position | DUAL |
Width | 10.16 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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