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IRG4BC30KDPBF
IGBT Chip Trans N-CH 600V 28A 100W 3-Pin(3+Tab) TO-220AB TubeIRG4BC30KDPBF
IGBT Chip Trans N-CH 600V 28A 100W 3-Pin(3+Tab) TO-220AB Tube
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IRG4BC30KDPBF 數據表
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詳細說明
In conclusion, the IRG4BC30KDPBF stands out as a superior insulated gate bipolar transistor that combines high power capabilities with energy efficiency and reliability. Its advanced features and rugged design make it an excellent choice for applications requiring fast switching speeds and high power handling. With built-in protection mechanisms and a high maximum junction temperature, this IGBT offers peace of mind in even the most demanding operating conditions. Upgrade your power control systems with the IRG4BC30KDPBF and experience unmatched performance and durability in a single package
主要特徵
- Compact design for space-saving applications
- Rugged construction for harsh environments
- Fast switching speed for efficient power control
應用
- Fast switching speed for power supplies
- Suitable for renewable energy inverters
- High voltage capability for reliability
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Product Category ! | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-220-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.88 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 28 A |
| Pd - Power Dissipation | 100 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Brand | Infineon Technologies |
| Continuous Collector Current Ic Max | 28 A | Gate-Emitter Leakage Current | 100 nA |
| Height | 8.77 mm | Length | 10.54 mm |
| Product Type ! | IGBT Transistors | Factory Pack Quantity | 1000 |
| Subcategory | IGBTs | Width | 4.69 mm |
| Part # Aliases | SP001532644 | Unit Weight | 0.211644 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IRG4BC30KDPBF?
The IRG4BC30KDPBF is a high power N-Channel IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by Infineon Technologies. It is suitable for various high power switching applications, such as motor control, power supplies, and solar inverters.
How Does IRG4BC30KDPBF Work?
The IRG4BC30KDPBF works by utilizing the principles of insulated gate bipolar transistors, which combine the high-speed switching capability of a MOSFET with the high-current and low saturation voltage capability of a bipolar transistor. When a sufficient gate voltage is applied, the IGBT allows a high current to flow between its collector and emitter, making it an ideal choice for high power switching applications.
How Many Pins does IRG4BC30KDPBF have and What are the Functions of the Pinout Configuration?
The IRG4BC30KDPBF is housed in a TO-220AB package. The pinout configuration includes:
- GATE: Gate control pin for the IGBT.
- C (or COL): Collector pin.
- E (or EMIT): Emitter pin.
- GND: Ground pin for the device.
What are the Pros and Cons of IRG4BC30KDPBF?
Pros:
- High Power Capability: Suitable for high power applications, such as motor control and power electronics.
- Fast Switching Speed: Enables high-frequency switching applications.
- Reliability: Provides high reliability and ruggedness in demanding environments.
- Compact Package: The TO-220AB package allows for easy mounting on heat sinks, making it suitable for thermal management.
Cons:
- Gate Drive Requirements: May require appropriate gate driver circuits for optimal performance.
- Heat Dissipation: High power applications may require additional thermal management considerations.
Are There Any Equivalents/Alternatives to IRG4BC30KDPBF for Recommendation?
- The IRG7PH46U10PBF from Infineon Technologies is a similar high power IGBT with enhanced features.
- Alternatives to the IRG4BC30KDPBF include the FS75R12KE3 from Infineon Technologies and the IHW40N135R3 from Infineon Technologies.
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