IRFZ14PBF

N Channel MOSFET with a voltage rating of 60V and current rating of 10A, with a power dissipation of 43W
7,364 有效庫存

IRFZ14PBF

有效庫存7,364

N Channel MOSFET with a voltage rating of 60V and current rating of 10A, with a power dissipation of 43W

  • 製造商零件號 # : IRFZ14PBF

  • 包裝/封裝: TO220-3

  • 零件狀態 : Active

  • 製造商: Siliconix

  • 產品分類 : Single FETs, MOSFETs

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IRFZ14PBF 數據表
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詳細說明

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.FEATURES• Dynamic dV/dt Rating• 175 °C Operating Temperature• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Compliant to RoHS Directive 2002/95/EC

主要特徵

  • Low power consumption
  • High efficiency
  • Quiet operation
  • Simple troubleshooting

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category ! MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 200 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 11 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 175 C
Pd - Power Dissipation 43 W Channel Mode Enhancement
Series IRFZ Brand Vishay Semiconductors
Configuration Single Fall Time 19 ns
Product Type ! MOSFET Rise Time ! 50 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 13 ns
Typical Turn-On Delay Time 10 ns Part # Aliases IRFZ14PBF-BE3
Unit Weight 0.068784 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 IRFZ14PBF PDF 下載

常見問題解答

What is IRFZ14PBF?

The IRFZ14PBF is an N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is commonly used in power management applications, motor control, and other high-power switching circuits.

How Does IRFZ14PBF Work?

The IRFZ14PBF operates as a switch, controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. By adjusting the gate voltage, the MOSFET can regulate the current passing through it, making it suitable for power switching applications.

How Many Pins does IRFZ14PBF have and What are the Functions of the Pinout Configuration?

The IRFZ14PBF is housed in a TO-220 package with three pins. The pinout configuration includes:

  • Gate (G): Controls the conductivity of the MOSFET.
  • Drain (D): Connects to the high-voltage load.
  • Source (S): Connects to ground or the low side of the circuit.

What are the Pros and Cons of IRFZ14PBF?

Pros:

  • High Power Handling: Capable of handling high currents and voltages.
  • Low On-Resistance: Offers low conduction losses when fully on.
  • Fast Switching Speed: Enables rapid switching operations for efficiency.
  • Robust Construction: Designed for reliable performance in demanding applications.
  • Wide Availability: Widely used and available from various suppliers.

Cons:

  • Gate Drive Requirements: Requires proper gate driving voltage levels for optimal performance.
  • Heat Dissipation: May generate heat under high load conditions, requiring heatsinking.
  • Threshold Voltage: The gate-source threshold voltage must be considered for proper operation.

Are There Any Equivalents/Alternatives to IRFZ14PBF for Recommendation?

  • The IRF3205 from Infineon Technologies is a similar N-channel power MOSFET with high current-handling capability.
  • Alternatives to the IRFZ14PBF include the FDP8870 from Fairchild Semiconductor and the STP55NF06L from STMicroelectronics.

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