AM29F080B-90EF

8M Flash Memory
6,227 有效庫存

AM29F080B-90EF

有效庫存6,227

8M Flash Memory

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AM29F080B-90EF 數據表
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詳細說明

GENERAL DESCRIPTIONThe Am29F080B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F080B is offered in 40-pin TSOP and 44-pin SO packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCCsupply. A 12.0 volt VPPis not required for program or erase operations. The device can also be programmed in standard EPROM programmers.DISTINCTIVE CHARACTERISTICS■ 5.0 V ±10%, single power supply operation — Minimizes system level power requirements■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device■ High performance — Access times as fast as 55 ns■ Low power consumption — 25 mA typical active read current — 30 mA typical program/erase current — 1 µA typical standby current (standard access time to active mode)■ Flexible sector architecture — 16 uniform sectors of 64 Kbytes each — Any combination of sectors can be erased. — Supports full chip erase — Group sector protection: A hardware method of locking sector groups to prevent any program or erase operations within that sector group Temporary Sector Group Unprotect allows code changes in previously locked sectors■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies bytes at specified addresses■ Minimum 1,000,000 program/erase cycles per sector guaranteed■ 20-year data retention at 125°C — Reliable operation for the life of the system■ Package options — 40-pin TSOP — 44-pin SO■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply Flash standard — Superior inadvertent write protection■ Data# Polling and toggle bits — Provides a software method of detecting program or erase cycle completion■ Ready/Busy# output (RY/BY#) — Provides a hardware method for detecting program or erase cycle completion■ Erase Suspend/Erase Resume — Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation■ Hardware reset pin (RESET#) — Resets internal state machine to the read mode■ Command sequence optimized for mass storage — Specific addresses not required for unlock cycles

主要特徵

  • Memory segmentation for efficient usage
  • Low power consumption in standby mode
  • Flexible memory mapping capabilities

應用

  • Reliable data storage
  • High data transfer rates
  • Extended durability

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category ! NOR Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-40
Series AM29F080B Memory Size ! 8 Mbit
Supply Voltage - Min 4.5 V Supply Voltage - Max 5.5 V
Active Read Current - Max 40 mA Interface Type Parallel
Organization 1 M x 8 Data Bus Width 8 bit
Timing Type Asynchronous Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Architecture Sector
Brand Infineon Technologies Memory Type ! NOR
Moisture Sensitive Yes Product Type ! NOR Flash
Speed 90 ns Factory Pack Quantity 120
Subcategory Memory & Data Storage

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 AM29F080B-90EF PDF 下載

常見問題解答

What is AM29F080B-90EF?

The AM29F080B-90EF is a 8-megabit (1 M x 8-bit/512 K x 16-bit) CMOS 5.0 Volt-only, sector and subsector erase Flash memory device. It is designed and manufactured by AMD (now part of Macronix International). It is commonly used in embedded systems, consumer electronics, and computer peripherals for storing firmware, boot code, and other non-volatile data.

How Does AM29F080B-90EF Work?

The AM29F080B-90EF operates as a non-volatile memory that can retain stored data even when power is removed. It features sector and subsector erase capability, allowing selective erasure of memory blocks. The device uses CMOS technology to achieve low power consumption and supports a single 5.0-volt power supply.

How Many Pins does AM29F080B-90EF have and What are the Functions of the Pinout Configuration?

The AM29F080B-90EF is housed in a 32-pin PLCC (Plastic Leaded Chip Carrier) package. The pinout configuration includes:

  • A0-A18: Address input pins for memory addressing.
  • DQ0-DQ7: Data input/output pins for 8-bit operation.
  • WE: Write Enable input pin for initiating write operations.
  • OE: Output Enable input pin for enabling data output.
  • CE: Chip Enable input pin for activating the memory device.
  • RY/BY: Ready/Busy output pin for indicating the status of memory operations.
  • RP: Reset/Power Down input pin for reset and power-down functions.
  • VCC: Power supply pin.
  • GND: Ground pin.

What are the Pros and Cons of AM29F080B-90EF?

Pros:

  • High Density: Offers 8 megabits of non-volatile storage for program and data storage.
  • Low Power Consumption: Operates with low power to minimize energy usage.
  • Flexible Erase Capability: Supports sector and subsector erase for efficient memory management.
  • Reliable Storage: Provides non-volatile storage for critical boot code and firmware.

Cons:

  • Complex Interface: Requires careful management of control and data signals for reliable operation.
  • Package Size: The 32-pin PLCC package may require specific equipment for handling and assembly.
  • End of Life: As AMD is now part of Macronix International, long-term availability may need to be considered.

Are There Any Equivalents/Alternatives to AM29F080B-90EF for Recommendation?

  • A common equivalent to the AM29F080B-90EF is the SST39SF040 from Microchip Technology.
  • Alternative Flash memory devices similar to the AM29F080B-90EF include the W29C040 from Winbond and the M29F040B from STMicroelectronics.

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