AM29LV081B-70ED
This 40-Pin TSOP package houses the AM29LV081B-70ED NOR Flash memory, providing a compact and efficient storage solutionAM29LV081B-70ED
This 40-Pin TSOP package houses the AM29LV081B-70ED NOR Flash memory, providing a compact and efficient storage solution
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AM29LV081B-70ED 數據表
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詳細說明
GENERAL DESCRIPTIONThe Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device isoffered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires onlya single, 3.0 volt VCCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.DISTINCTIVE CHARACTERISTICS■ Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29LV081 device■ High performance — Access times as fast as 70 ns■ Ultra low power consumption (typical values at 5 MHz) — 200 nA Automatic Sleep mode current — 200 nA standby mode current — 7 mA read current — 15 mA program/erase current■ Flexible sector architecture — Sixteen 64 Kbyte sectors — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any programor erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changesin previously locked sectors■ Unlock Bypass Program Command — Reduces overall programming time when issuing multipleprogram command sequences■ Embedded Algorithms — Embedded Erase algorithm automatically preprogramsand erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies dataat specified addresses■ Minimum 1,000,000 write cycle guarantee per sector■ 20-year data retention at 125°C — Reliable operation for the life of the system■ Package option — 40-pin TSOP■ Compatibility with JEDEC standards — Pinout and software compatible with single power supply Flash — Superior inadvertent write protection■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sectorthat is not being erased, then resumes the erase operation■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data■ Command sequence optimized for mass storage — Specific addresses not required for unlock cycles
主要特徵
- Single power supply operation
- — 2.7 to 3.6 volt read and write operations for battery-powered applications
- Manufactured on 0.32 µm process technology
- — Compatible with 0.5 µm Am29LV081 device
- High performance
- — Access times as fast as 70 ns
- Ultra low power consumption (typical values at 5 MHz)
- — 200 nA Automatic Sleep mode current
- — 200 nA standby mode current
- — 7 mA read current
- — 15 mA program/erase current
- Flexible sector architecture
- — Sixteen 64 Kbyte sectors
- — Supports full chip erase
- — Sector Protection features:
- A hardware method of locking a sector to prevent any program
- or erase operations within that sector
- Sectors can be locked in-system or via programming equipment
- Temporary Sector Unprotect feature allows code changes
- in previously locked sectors
- Unlock Bypass Program Command
- — Reduces overall programming time when issuing multiple
- program command sequences
- Embedded Algorithms
- — Embedded Erase algorithm automatically preprograms
- and erases the entire chip or any combination of designated sectors
- — Embedded Program algorithm automatically writes and verifies data
- at specified addresses
- Minimum 1,000,000 write cycle guarantee per sector
- 20-year data retention at 125°C
- — Reliable operation for the life of the system
- Package option
- — 40-pin TSOP
- Compatibility with JEDEC standards
- — Pinout and software compatible with single power supply Flash
- — Superior inadvertent write protection
- Data# Polling and toggle bits
- — Provides a software method of detecting program or erase operation completion
- Ready/Busy# pin (RY/BY#)
- — Provides a hardware method of detecting program or erase cycle completion
- Erase Suspend/Erase Resume
- — Suspends an erase operation to read data from, or program data to, a sector
- that is not being erased, then resumes the erase operation
- Hardware reset pin (RESET#)
- — Hardware method to reset the device to reading array data
- Command sequence optimized for mass storage
- — Specific addresses not required for unlock cycles
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code ! | 8542.32.00.51 | Access Time-Max | 70 ns |
Command User Interface | YES | Data Polling | YES |
JESD-30 Code | R-PDSO-G40 | Memory Density | 8388608 bit |
Memory IC Type | FLASH | Memory Width | 8 |
Number of Sectors/Size | 16 | Number of Terminals | 40 |
Number of Words | 1048576 words | Number of Words Code | 1000000 |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 1MX8 | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP40,.8,20 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Parallel/Serial | PARALLEL | Power Supplies ! | 3/3.3 V |
Qualification Status ! | Not Qualified | Ready/Busy | YES |
Sector Size | 64K | Standby Current-Max | 0.000005 A |
Supply Current-Max | 0.03 mA | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.5 mm |
Terminal Position | DUAL | Toggle Bit | YES |
Type | NOR TYPE |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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