AM29F040B-55EF

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
5,469 有效庫存

AM29F040B-55EF

有效庫存5,469

4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

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AM29F040B-55EF 數據表
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詳細說明

The AM29F040B-55EF flash memory device is not only powerful but also user-friendly. With a built-in Erase/Program Controller, managing erase and program operations is a breeze. Its support for top or bottom boot block location gives you the flexibility to tailor the device to your specific needs. The 32-pin PLCC package makes it easy to integrate into your design, whether you're working on embedded systems or consumer electronics. Trust the AM29F040B-55EF to deliver reliable performance and efficient data storage for your next project

主要特徵

  • This device offers:
  • - Low voltage operation
  • - High performance capabilities
  • - Excellent reliability

應用

  • Meets the demands of modern technology
  • Unmatched performance and durability
  • Optimal for non-volatile memory

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category ! NOR Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-32
Series AM29F040B Memory Size ! 4 Mbit
Supply Voltage - Min 4.75 V Supply Voltage - Max 5.25 V
Active Read Current - Max 30 mA Interface Type Parallel
Organization 512 k x 8 Data Bus Width 8 bit
Timing Type Asynchronous Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Architecture Sector
Brand Infineon Technologies Memory Type ! NOR
Moisture Sensitive Yes Product Type ! NOR Flash
Speed 55 ns Factory Pack Quantity 156
Subcategory Memory & Data Storage

Specification Comparison

AM29F040B-55EF vs AM29F040B-90JC vs AM29F040B-55JI AM29F040B-90JI vs AM29F040B-55EF vs AM29F040B-90JC

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 AM29F040B-55EF PDF 下載

常見問題解答

What is AM29F040B-55EF?

The AM29F040B-55EF is a 4-megabit (512K x 8-bit) CMOS flash memory device manufactured by AMD (now part of Cypress Semiconductor). It is commonly used in embedded systems, consumer electronics, and industrial applications that require non-volatile memory storage.

How Does AM29F040B-55EF Work?

The AM29F040B-55EF operates as a non-volatile memory device that stores data even when power is removed. It uses a floating gate transistor technology to store digital information in memory cells. The device supports both random and sequential access for reading and programming data.

How Many Pins does AM29F040B-55EF have and What are the Functions of the Pinout Configuration?

The AM29F040B-55EF is housed in a 32-pin PDIP (Plastic Dual In-Line Package). The pinout configuration includes:

  • A0-A19: Address Inputs.
  • DQ0-DQ7: Data Input/Output Pins.
  • CE: Chip Enable for device selection.
  • OE: Output Enable for data output control.
  • WE: Write Enable for data programming.
  • RP: Ready/Busy Status Output.
  • VCC, VSS: Power Supply and Ground Pins.
  • ACC, BYTE: Access and Byte Enable Pins.

What are the Pros and Cons of AM29F040B-55EF?

Pros:

  • High Density: Offers 4-megabit storage capacity for data-intensive applications.
  • Non-Volatile: Retains data even without power, suitable for storage applications.
  • Fast Access Time: Provides quick read and write operations for efficient data handling.
  • Durable: CMOS technology ensures reliability and longevity.
  • Industry Standard: Widely used and supported in the embedded systems industry.

Cons:

  • Programming Voltage: Requires specific programming voltages for write operations.
  • Restricted Endurance: Limited number of erase/write cycles compared to some newer memory technologies.
  • Obsolete: Being an older technology, it may not offer the latest features found in newer flash memory devices.

Are There Any Equivalents/Alternatives to AM29F040B-55EF for Recommendation?

  • The SST39SF040 from Microchip is a similar 4-megabit flash memory device.
  • Alternative flash memory options include the W25Q32 from Winbond and the AT49BV040 from Atmel (now Microchip).

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