AM29F010B-55JF
The AM29F010B-55JF item is supplied by an electronics distributor based in France, with over three decades of experienceAM29F010B-55JF
The AM29F010B-55JF item is supplied by an electronics distributor based in France, with over three decades of experience
品質保證
品質保證
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認證
我們已成功獲得各項認證標準,並建立了自己的專業檢測實驗室。 這確保了我們向客戶提供的每件產品都符合最高的品質標準。 我們遵守嚴格的測試協議,以保持我們產品的一致性和準確性。 為了確保我們的產品是原裝正品,我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。 我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。
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運輸與付款
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服務與包裝
服務與包裝
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管或託盤
AM29F010B-55JF 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
Advanced Micro Devices has once again delivered a top-of-the-line product with the AM29F010B-55JF Flash memory IC. This memory chip boasts a 128K x 8-bit organization, ensuring efficient data storage and retrieval. Its low power consumption, with only 55 mA active and 0.55 mA standby, makes it an energy-efficient choice for electronic devices. The durable design of the AM29F010B-55JF guarantees a minimum of 100,000 program/erase cycles, providing reliable performance that users can trust
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主要特徵
- This flash memory device is suitable for various applications.
- It has a built-in controller to manage the data transfer process.
- The product provides an erasure and programming mechanism.
應用
- Excellent storage option for network switches
- Ideal for consumer electronics
- Reliable memory solution
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | NOR Flash | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | PLCC-32 |
Series | AM29F010B | Memory Size ! | 1 Mbit |
Supply Voltage - Min | 4.5 V | Supply Voltage - Max | 5.5 V |
Active Read Current - Max | 30 mA | Interface Type | Parallel |
Organization | 128 k x 8 | Data Bus Width | 8 bit |
Timing Type | Asynchronous | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature ! | + 85 C | Architecture | Sector |
Brand | Infineon Technologies | Memory Type ! | NOR |
Moisture Sensitive | Yes | Product Type ! | NOR Flash |
Speed | 55 ns | Factory Pack Quantity | 30 |
Subcategory | Memory & Data Storage |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is AM29F010B-55JF?
The AM29F010B-55JF is a 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, uniform sector flash memory manufactured by Advanced Micro Devices (AMD). It is designed for applications that require non-volatile, electrically erasable and programmable memory, such as embedded systems, automotive electronics, and consumer electronics.
How Does AM29F010B-55JF Work?
The AM29F010B-55JF operates by storing digital data in memory cells that can be electrically erased and reprogrammed. It utilizes a simple and efficient programming interface to write data into the memory and provides sector erase capability for flexible data storage management. The flash memory offers reliable non-volatile storage with low power consumption.
How Many Pins does AM29F010B-55JF have and What are the Functions of the Pinout Configuration?
The AM29F010B-55JF is housed in a 32-pin PLCC (Plastic Leaded Chip Carrier) package. The pinout configuration includes:
- A0-A16: Address inputs for memory cell selection.
- DQ0-DQ7: Data input/output pins for 8-bit data transfer.
- CE: Chip enable for device selection.
- OE: Output enable for data output control.
- WE: Write enable for data programming control.
- RY/BY: Ready/Busy output for operation status indication.
- RP: Reset/Block-Protection input for memory protection control.
- VCC: Power supply pin (5.0V).
- GND: Ground pin.
What are the Pros and Cons of AM29F010B-55JF?
Pros:
- Non-Volatile Memory: Retains data even when power is removed, suitable for storing critical information.
- Electrically Erasable and Reprogrammable: Provides flexibility to update data without removing the memory from the system.
- Uniform Sector Architecture: Enables efficient data management by allowing sector-level erasure.
- Low Power Consumption: Operates with low power, suitable for battery-powered devices.
- Durable and Reliable: Offers robust memory storage with high endurance and retention.
Cons:
- Size: Limited storage capacity compared to higher-density flash memory devices.
- Programming Time: Flash memory programming may require relatively longer time compared to volatile RAM.
- Endurance Limit: Finite program/erase cycle endurance may require careful management in high-write applications.
Are There Any Equivalents/Alternatives to AM29F010B-55JF for Recommendation?
Equivalents to the AM29F010B-55JF include the SST39SF010A from Microchip Technology and the W27C010 from Winbond Electronics.
Alternatives to the AM29F010B-55JF include the AT29C010A from Atmel and the M29F010B from STMicroelectronics.
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