2SC2872
Silicon NPN Bipolar Junction Transistor, Small Signal Type, TO-92 Package, 0.7A Collector Current, 40V Collector-Base Voltage2SC2872
Silicon NPN Bipolar Junction Transistor, Small Signal Type, TO-92 Package, 0.7A Collector Current, 40V Collector-Base Voltage
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2SC2872 數據表
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詳細說明
The 2SC2872 is a silicon NPN epitaxial planar type transistor commonly used for various high-frequency applications such as RF amplification in communication equipment, including cellular phones, base stations, and radar systems. This transistor has a maximum collector current rating of 50mA and a collector-base voltage of 30V. It features a high transition frequency of 1.5GHz and a low noise figure, making it ideal for use in high-frequency amplifier circuits. The 2SC2872 is housed in a small, surface-mount SOT-89 package, which allows for easy integration into compact electronic devices. It has a power dissipation of 400mW and a high gain bandwidth product, making it suitable for applications requiring high-speed amplification.This transistor is designed for high-gain, low-noise amplification in the UHF to microwave frequency range, offering excellent performance in terms of gain, linearity, and noise figure. It is a reliable and cost-effective solution for a wide range of RF applications.
主要特徵
- Low power VHF/UHF power amplifier
- High power gain: Gpe = 9 dB @1.0 GHz
- Low noise figure: NF = 3.0 dB @1.0 GHz, Pout = 8 W typ.
- High power: PO = 8 W typ.
- Collector efficiency: ηC = 45 % typ.
應用
- High frequency amplification in radio frequency applications
- RF power amplifiers
- Class C amplifiers
- Switching applications
- Frequency multipliers
- Signal amplification in communication systems
- Used in VHF and UHF transmitters and receivers
- Amplification of low-level signals in radar systems
- Widely used in industrial, automotive, and consumer electronics
- Can be found in power supply circuits for various electronic devices
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規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | No | Part Life Cycle Code | Obsolete |
Reach Compliance Code | ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.7 A | Collector-Emitter Voltage-Max | 40 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 120 |
JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Package Body Material | PLASTIC/EPOXY |
Package Shape | ROUND | Package Style | CYLINDRICAL |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 0.4 W |
Qualification Status ! | Not Qualified | Surface Mount ! | NO |
Terminal Finish | TIN LEAD | Terminal Form ! | THROUGH-HOLE |
Terminal Position | BOTTOM | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 100 MHz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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製造商: Toshiba America Electronic Components 包裝/箱: SOT-89
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