2SC2270

2SC2270 is a silicon NPN epitaxial planar transistor primarily used for high-frequency amplification. It is designed for general-purpose amplifier applications in the frequency range of up to 150MHz. The transistor features a collector current (IC) of 50mA and a collector to base voltage (VCBO) of 30V. It also has a power dissipation (PD) of 150mW and a transition frequency (ft) of 1.5GHz. The maximum voltage across the collector to emitter (VCEO) is 20V, while the maximum voltage across the emitter to base (VEBO) is 5V. The transistor is housed in a small SOT-23 package, which makes it ideal for applications where space is limited. It operates at temperatures ranging from -55°C to 150°C, which allows for versatility in various operating conditions.

主要特徵

• High voltage, high power NPN transistor
• Low VCE(sat) for improved efficiency
• Excellent linearity and high gain
• Low noise figure for optimal performance in RF applications
• Good thermal stability
• Extended temperature range for versatile use

應用

• Audio amplification circuits
• Radio frequency amplification circuits
• Television signal amplification circuits
• Industrial control systems
• Communications equipment
• Power supply circuits
• Sensitive electronic circuits
• Automotive electronics
• Instrumentation
• Consumer electronics