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TO-126 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| 2SB1151 | Plastic/Epoxy Encapsulated PNP Bipolar Transistor with 5A Collector Current and 60V Collector-Emitter Breakdown Voltage, 3-Pin Configuration | Renesas | 3~7 Days | 3,990 | ||
| 2SC3840 | 600V High-Voltage Transistor | Renesas | 3~7 Days | 3,559 | ||
| 2SD668 | Product 2SD668 is a TO-126 package containing bipolar transistors compliant with ROHS regulations | Isc | 3~7 Days | 7,806 | ||
| 2SD2004 | Featuring impressive voltage and current ratings | Rohm Semiconductor | 3~7 Days | 7,766 | ||
| 2SC3116 | 60V V(BR)CEO 700mA I(C) TO-126 | Sanyo | 3~7 Days | 3,768 | ||
| 2SB1143 | PNP Power Bipolar Transistor with 3 Pin TO-126ML Package | Sanyo Semiconductor Co Ltd | 3~7 Days | 6,475 | ||
| 2SD882P | Designed for various applications | Renesas Electronics | 3~7 Days | 3,054 | ||
| KSC2682 | TO-126 Plastic/Epoxy Encapsulated Power Bipolar Transistor, NPN Type, with 0.1A Collector Current and 180V Collector-Emitter Breakdown Voltage | SAMSUNG | 3~7 Days | 4,923 | ||
| PM-F65 | Fork light barrier with NPN technology and a 0.006m length, suited for 5-24 VDC power supply, complete with a connector and IP40 protection rating | PANASONIC | 3~7 Days | 5,712 | ||
| NTE373 | NTE373 NPN Silicon Transistor | NTE | 3~7 Days | 4,226 | ||
| 2SC2036 | 2SC2036 is a power transistor suitable for audio amplification and other high-power applications. | TOSHIBA | 3~7 Days | 7,817 | ||
| KTC3114 | Power Bipolar Transistor with a current rating of 0.15A and voltage rating of 50V | KEC | 3~7 Days | 7,964 | ||
| 2SD1694 | Plastic/Epoxy Packaged NPN Silicon Power Bipolar Transistor with 3A Collector Current and 60V Collector-Emitter Breakdown Voltage | NEC | 3~7 Days | 5,027 | ||
| MJE240 | Describing the MJE240 product | Onsemi | 3~7 Days | 5,871 | ||
| 2SC2824 | 120V V(BR)CEO NPN BJT Transistor with 1A I(C) in TO-126VAR Package | TOSHIBA | 3~7 Days | 5,167 | ||
| 2SC2611 | ROHS Bipolar Transistors TO-126 BJT | HITACHI | 3~7 Days | 7,032 | ||
| 2SC1212A | The 2SC1212A is a high-frequency transistor designed for RF amplification in electronic devices. | HITACHI | 3~7 Days | 4,061 | ||
| 2SC2270 | Bipolar Junction Transistor - NPN Type - 20V Collector-Emitter Voltage, 5A Collector Current, TO-126 Package | TOSHIBA | 3~7 Days | 6,511 | ||
| 2SB1109 | Bipolar Junction Transistor PNP TO-126 | HITACHI | 3~7 Days | 7,494 | ||
| NTE184 | TO-126 Bipolar Junction Transistors (BJTs) with RoHS Compliance (NTE184) | NTE | 3~7 Days | 3,983 | ||
| 2SC4001 | High Frequency Silicon NPN Transistor | NEC | 3~7 Days | 7,448 | ||
| 2SA1546 | Very High Frequency Silicon PNP Bipolar Transistor 2SA1546 | NEC | 3~7 Days | 7,344 | ||
| 2SD1609 | TO-126 Bipolar Junction Transistor NPN Type | HITACHI | 3~7 Days | 5,040 | ||
| KSA1156 | low-power transistor | FAIRCHILD | 3~7 Days | 5,581 | ||
| BLD123D | BLD123D chip: Advanced technology for efficient data processing. | SI | 3~7 Days | 7,719 | ||
| BLD122D | BLD122D chip is a small, low-power Bluetooth Low Energy (BLE) module for Bluetooth applications. | SI | 3~7 Days | 5,240 | ||
| BUX87P | Silicon diffused power transistor | PHILIPS | 3~7 Days | 6,920 | ||
| 2SB776 | Small Signal Bipolar Transistor | UTC | 3~7 Days | 7,090 | ||
| KTC2800 | Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN | KEC | 3~7 Days | 7,193 | ||
| BD135-10 | Transistor | FAIRCHILD | 3~7 Days | 6,131 | ||
| 2SA1538 | High-Definition CRT Display Video Output Applications | SANYO | 3~7 Days | 6,384 | ||
| 2SA1407 | TRANSISTOR,BJT,PNP,200V V(BR)CEO,150MA I(C),TO-126 | SANYO | 3~7 Days | 3,526 | ||
| 2SA1406 | high-Definition CRT Display Video Output Applications? | SANYO | 3~7 Days | 6,279 | ||
| 2SA1352 | Trans GP BJT PNP 200V 0.1A 3-Pin TO-126 | SANYO | 3~7 Days | 7,033 | ||
| 2SA1381ESTU | Bipolar Junction Transistor PNP Type TO-126 300V 0.1A | Onsemi | 3~7 Days | 5,894 | ||
| NTE374 | Robust three-pin transistor suitable for a range of power management tas | Nte Electronics | 3~7 Days | 3,174 | ||
| 2N6037 | NPN Darlington transistor for power amplifier application | Stmicroelectronics | 3~7 Days | 2,628 |
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