2N7002PS,115

有效庫存6,983

Power Field-Effect Transistor, 0.32A I(D), N-Channel, Metal-oxide Semiconductor FET

  • 製造商零件號 # : 2N7002PS,115

  • 包裝/封裝: TSSOP-6

  • 零件狀態 : NRND

  • 製造商: Nexperia Usa Inc.

  • 產品分類 : FET, MOSFET Arrays

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2N7002PS,115 數據表

價格 (USD)

數量 單價 總價
5 $0.100 $0.50
50 $0.082 $4.10
150 $0.072 $10.80
500 $0.066 $33.00
3000 $0.058 $174.00
6000 $0.056 $336.00

這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。

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詳細說明

The 2N7002PS,115 MOSFET is a versatile electronic component designed for use in various electronic circuits. As an N-channel transistor, it features a continuous drain current of 320mA and a drain source voltage of 60V, making it suitable for low to moderate power applications. The on resistance of 1ohm and threshold voltage of 1.75V ensure efficient operation in switching circuits, while the 320mW power dissipation rating allows for reliable performance under typical operating conditions. The SOT-363 case style with 6 pins offers easy integration into circuit boards, while the wide operating temperature range of -55°C to +150°C makes it suitable for use in both industrial and automotive environments. Whether used in single or dual module configurations, this MOSFET delivers reliable performance and precise control in a compact and versatile package

主要特徵

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • AEC-Q101 qualified
Nexperia Usa Inc. Inventory

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSSOP-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 320 mA Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 800 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 280 mW
Channel Mode Enhancement Brand Nexperia
Product Type ! MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Part # Aliases 934064134115
Unit Weight 0.000265 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 2N7002PS,115 PDF 下載

常見問題解答

What is 2N7002PS,115?

The 2N7002PS,115 is an N-channel enhancement mode Field-Effect Transistor (FET) designed by Nexperia. It is ideal for low-power, small-signal switching applications in various electronic circuits, such as power management, load switching, and signal amplification.

How Does 2N7002PS,115 Work?

The 2N7002PS,115 operates as a switch or amplifier based on the voltage applied to its gate terminal. In the off state, the FET exhibits a high impedance, effectively acting as an open switch. When a sufficient voltage is applied to the gate, the FET turns on, allowing current to flow between the source and drain terminals. This functionality enables it to control the flow of current in electronic circuits.

How Many Pins does 2N7002PS,115 have and What are the Functions of the Pinout Configuration?

The 2N7002PS,115 is housed in a SOT-323 (SC-70) surface-mount package. The pinout configuration includes:

  • G (Gate): Controls the conductivity of the FET.
  • D (Drain): Where the current flows into the FET.
  • S (Source): Where the current flows out of the FET.

What are the Pros and Cons of 2N7002PS,115?

Pros:

  • Low Threshold Voltage: Enables control of low-level signals and power levels.
  • Small Package: The SOT-323 package is space-efficient, suitable for miniaturized designs.
  • Fast Switching Speed: Facilitates rapid on/off switching transitions in electronic circuits.
  • Low RDS(ON): Exhibits low on-state resistance, minimizing power dissipation.

Cons:

  • Lower Current Handling: Not suitable for high-power applications due to its low current rating.
  • Sensitive to Static Discharge: Being a MOSFET, it is sensitive to electrostatic discharge and requires proper handling.

Are There Any Equivalents/Alternatives to 2N7002PS,115 for Recommendation?

Equivalents to the 2N7002PS,115 include the BSS138 and BS170, both also N-channel enhancement mode FETs. Alternatives to consider are the DMN10H220SK3 and DMN1019USN, which offer similar characteristics.

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