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TSOP-54 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| MT48LC32M16A2P-75:C | 512Mbit DRAM chip | Alliance Memory | OBSOLETE | 3~7 Days | 3,489 | |
| IS42S16800E-7TLI | TSOP2-54 package for easy installation and versatility | Issi | 3~7 Days | 4,794 | ||
| HY57V281620FTP-H | Lead-free, TSOP2-54 | Sk Hynix Inc | 3~7 Days | 3,899 | ||
| HY57V641620ETP-H | High performance memory | Hynix | 3~7 Days | 3,491 | ||
| H57V2562GTR-75C | CMOS technology for high performance | Hynix | 3~7 Days | 3,009 | ||
| CY7C1069DV33-10ZSXI | In inventory, ships out today | Infineon | Active | 3~7 Days | 3,420 | |
| CY7C1061AV33-10ZXI | 10ns 54-Pin TSOP | Infineon | Active | 3~7 Days | 3,383 | |
| MT48LC8M16A2P-7E | PDSO54, 0.400 INCH, LEAD FREE, PLASTIC | Micron | 3~7 Days | 6,218 | ||
| MT48LC32M16A2TG-75IT:C | 512M-Bit Synchronous DRAM Chip | Micron Technology | 3~7 Days | 5,399 | ||
| MT48LC16M16A2P-75 D | 3.3V operating voltage | Micron Technology | 3~7 Days | 5,972 | ||
| MT48LC16M16A2P-6AIT:G | TSOP-II package | Micron | ACTIVE | 3~7 Days | 7,557 | |
| MT48LC16M16A2P-6A | Lead-free plastic | Micron | 3~7 Days | 6,960 | ||
| K4S641632H-TC75 | SDRAM, 4M x 16, 54 Pin, Plastic, TSOP | Samsung Semiconductor | 3~7 Days | 6,058 | ||
| K4S511632D-UC75 | Distributor of electronic components based in France since 1988 | Samsung Semiconductor | 3~7 Days | 3,042 | ||
| TC554161AFT-70L | Enhance system performance with reliable and low-power consumption SRAM technology | Toshiba America Electronic Components | 3~7 Days | 4,747 | ||
| MT48LC8M16A2P-6A:L | Small DRAM chip | Micron Technology | 3~7 Days | 3,068 | ||
| MT48LC16M16A2P-75:D | 3.3V operating voltage | Micron Technology | OBSOLETE | 3~7 Days | 4,842 | |
| IS42S16800E-7TL | High-speed 128 Megabit Synchronous Dynamic Random-Access Memory, operating at 143 Megahertz and requiring 3.3 Volts | Issi, Integrated Silicon Solution Inc | 3~7 Days | 3,999 | ||
| CY7C1061DV33-10ZSXI | Stocked and ready for same-day shipping | Infineon Technologies | Active | 3~7 Days | 3,590 | |
| CY7C1061AV33-10ZXC | 16 Megabit synchronous static random-access memory with a fast access time of 10 nanoseconds and operates at 3.3 volts." | Infineon Technologies | Active | 3~7 Days | 7,243 | |
| CY7C10612DV33-10ZSXI | Pre-ordered Products ROHS CY7C10612DV33-10ZSXI TSOP-54 | Infineon Technologies | Active | 3~7 Days | 3,263 | |
| MT48LC32M16A2P-75IT:C | Fast-paced DDR SDRAM chip for high-performance applications." (44 characters) | Micron Technology | 3~7 Days | 4,045 | ||
| K4S641632K-UC75 | PDSO54 Synchronous DRAM chip offering 4MX16 storage and operating at 5.4ns speed in CMOS technology | SAMSUNG | 3~7 Days | 5,452 | ||
| K4S561632H-UC75 | 256Mbit DRAM chip designed for Synchronous Dynamic Random Access Memory | SAMSUNG | 3~7 Days | 5,085 | ||
| CY7C1061AV33-10ZI | High-performance memory solution for demanding applications requiring rapid data transfer | Infineon Technologies | 3~7 Days | 5,407 | ||
| K4S561632H-UI75 | The K4S561632H-UI75 is a high-speed, low-power DDR SDRAM chip with a capacity of 256MB | SAMSUNG | 3~7 Days | 3,718 | ||
| K4S510832D-UC75 | The K4S510832D-UC75 is a DRAM chip commonly used in electronic devices for data storage | SAMSUNG | 3~7 Days | 5,742 | ||
| HY57V561620FTP-H | The HY57V561620FTP-H is a high-speed, low-power dynamic random-access memory (DRAM) chip with a capacity of 512 megabits | HYNIX | 3~7 Days | 7,843 | ||
| HY57V56820FTP-H | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 | HYNIX | 3~7 Days | 5,172 | ||
| K4S560832J-UC75 | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, | SAMSUNG | 3~7 Days | 7,006 | ||
| K4S641632F-TC75 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SAMSUNG | 3~7 Days | 6,862 | ||
| K4S641632N-LC75 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | SAMSUNG | 3~7 Days | 6,367 | ||
| MT48LC16M16A2P-7E | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | MICRON | 3~7 Days | 4,381 | ||
| MT48LC16M16A2P-75 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | MICRON | 3~7 Days | 7,811 | ||
| MT48LC8M16A2P-7E:G | Memory module designed for use in electronic devices | Micron Technology | OBSOLETE | 3~7 Days | 5,579 | |
| MT48LC4M16A2P-7E:J | 5.4ns access time | Micron Technology | 3~7 Days | 7,050 | ||
| MT48LC16M16A2P-6A:G TR | 256 megabyte 16 million by 16 TSOP package | Micron Technology | 3~7 Days | 6,794 | ||
| HY57V641620FTP-7 | 5.4ns access time | Sk Hynix Inc | 3~7 Days | 4,066 | ||
| W9812G6KH-6 | DRAM 128Mb SDR SDRAM x16, 166MHz | Winbond Electronics | 3~7 Days | 5,616 | ||
| IS42S16160J-6TL | Low power consumption, ideal for efficient operation | Issi, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 6,234 |
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