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TO-263-7 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| IPB019N08N3G | Advanced N-channel MOSFET for power management and control | INFINEON | ACTIVE | 3~7 Days | 3,481 | |
| IPB039N10N3G | Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN | INFINEON | 3~7 Days | 7,995 | ||
| OPA547F | High Performance Operational Amplifier | Texas Instruments | 3~7 Days | 6,089 | ||
| IRFS4010-7PPBF | High-power surface mount MOSFET for demanding applications | Infineon | 3~7 Days | 4,899 | ||
| DPA424R | Featuring a robust design, the DPA424R is a reliable solution for converting DC power in a range of industrial and electronic devices | Power Integrations | ACTIVE | 3~7 Days | 6,824 | |
| TLE5205-2G | Capable of driving DC motors up to 5A and 40V voltage | Infineon | OBSOLETE | 3~7 Days | 7,418 | |
| LM2677S-ADJ/NOPB | Conv DC-DC 8V to 40V Synchronous Step Down Single-Out 1.2V to 37V 5A 8-Pin(7+Tab) TO-263 Tube | Texas Instruments | ACTIVE | 3~7 Days | 7,486 | |
| FDB0170N607L | 00A N-Channel PowerTrench MOSFET 60V, 1.4mOhm, 800-REEL | Onsemi | Active | 3~7 Days | 4,569 | |
| FDB1D7N10CL7 | 7m ohm 7-pin d2pak t/r shielded gate n-channel 100v 268a | Onsemi | 3~7 Days | 4,386 | ||
| IPB025N10N3G | Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN | INFINEON | 3~7 Days | 3,039 | ||
| C2M1000170J | High voltage silicon carbide MOSFET with a RDS ON of 1 Ohm, ideal for power electronics applications | Wolfspeed | Active | 3~7 Days | 8,834 | |
| OPA548F | 7 Pin Plastic SIP Single AMP Operational Amplifier | Texas Instruments | OBSOLETE | 3~7 Days | 5,194 | |
| TLE4242G | LED Lighting Drivers for LEDs with up to 42 volts | Infineon | OBSOLETE | 3~7 Days | 7,289 | |
| IPF012N06NF2SATMA1 | N-channel power MOSFET with a maximum voltage of 60V and a current capability of 41A | Infineon | Active | 3~7 Days | 8,484 | |
| BTC30010-1TAA | Advanced Power Management MOSFETs for Robust Syste | Infineon Technologies | 3~7 Days | 6,447 | ||
| G3R75MT12J | R75MT12J, is a MOSFET featuring Silicon Carbide technology, capable of handling 1200 volts with a resistance of 75 milliohms, packaged in TO-263-7 | GeneSiC Semiconductor | Active | 3~7 Days | 5,379 | |
| IMBF170R650M1 | High-Power Transistor | infineon | 3~7 Days | 5,598 | ||
| IMBF170R1K0M1 | Transistor for Power Applications | infineon | 3~7 Days | 5,781 | ||
| BTN7970BAUMA1 | Advanced half-bridge technology for precise motor managemen | Infineon | 3~7 Days | 3,697 | ||
| IPB025N10N3 G | IPB025N10N3 G TO-263-7 MOSFETs ROHS | Infineon | Obsolete | 3~7 Days | 6,410 | |
| DRV101F | Experience seamless integration and reliable operation with the DRV101F, your ultimate solution for optimal control of solenoids and valves." | texas instruments | OBSOLETE | 3~7 Days | 8,848 | |
| BTN8960TAAUMA1 | High-reliability power conversion for harsh environment | Infineon | 3~7 Days | 4,553 | ||
| IMBF170R450M1 | Designed for Industrial IoT Applicatio | infineon | 3~7 Days | 6,292 | ||
| BTN8980TA | INFINEON BTN8980TA MOTOR DRIVER | infineon | OBSOLETE | 3~7 Days | 9,913 | |
| IMBG120R030M1H | Power Field-Effect Transistor | Infineon Technologies AG | Active | 3~7 Days | 9,315 | |
| IRLS4030TRL7PP | N-channel MOSFET transistor with 100V and 190A capability in a 7-pin(6+Tab) D2PAK package | Infineon | Active | 3~7 Days | 9,692 | |
| IPB010N06NATMA1 | MOSFET, specifically N-channel, rated for 60 volts and capable of handling currents up to 180 amps, packaged in D2PAK-6 | Infineon | 3~7 Days | 8,054 | ||
| IRLS3034TRL7PP | N-channel Silicon Power MOSFET | Infineon Technologies | ACTIVE | 3~7 Days | 7,325 | |
| IRFS7434TRL7PP | Product description: N-channel power MOSFET with a 40V rating | Infineon | Active | 3~7 Days | 6,460 | |
| IPC218N04N3X1SA1 | Trans MOSFET N-CH 40V Chip Wafer 3-Pin | Infineon | Restricted Availability | 3~7 Days | 7,297 | |
| TLE52052GAUMA1 | TLE52052GAUMA1 is a SMT H-Bridge for DC-Motor, belonging to the TLE5205-2 Series and capable of handling up to 5 A at 40 V | Infineon | Obsolete | 3~7 Days | 6,172 | |
| IPB180N04S4L01ATMA1 | MOSFET N-CHANNEL 30/40V | Infineon | Active | 3~7 Days | 8,677 | |
| IRFS7530-7PPBF | High-power N-channel Silicon MOSFET with D2PAK Tube Packaging | Infineon | OBSOLETE | 3~7 Days | 5,105 | |
| IRF1324S-7P | N-Channel Silicon Metal-Oxide Semiconductor FET with 0.001ohm resistance | Infineon | Restricted Availability | 3~7 Days | 8,170 | |
| IRF60SC241ARMA1 | MOSFET TRENCH 40<-<100V | Infineon | Active | 3~7 Days | 5,321 | |
| IPB180N04S4H0ATMA1 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | Infineon | Active | 3~7 Days | 9,839 | |
| IPB180N04S400ATMA1 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | Infineon | Active | 3~7 Days | 9,962 | |
| IPB160N04S203ATMA4 | MOSFET MOSFET_(20V 40V) | Infineon | Active | 3~7 Days | 6,728 | |
| AUIRFS8409-7TRL | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | Infineon | Active | 3~7 Days | 7,867 | |
| IPB180N04S302ATMA1 | MOSFET MOSFET_(20V 40V) | Infineon | NRND | 3~7 Days | 7,582 |
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