Module 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
7MBR35VM120-50 | Three-phase IGBT Power Integrated Module, 35A, 1200V, V Series | Fuji Electric Co Ltd | 3~7 Days | 6,337 | ||
SKIIP83AC12IT1 | Professional and courteous service guaranteed | Semikron | 3~7 Days | 7,519 | ||
6DI15A-050 | Power Bipolar Transistor with 15A I(C) and 600V V(BR)CEO | Fuji Electric Co Ltd | 3~7 Days | 4,649 | ||
2MBI200N-120 | N-Channel Insulated Gate Bipolar Transistor (IGBT) in MODULE-7 packaging | Fuji Electric Co Ltd | 3~7 Days | 3,183 | ||
CP25TD1-24Y | CP25TD1-24Y is a powerful FPGA chip with 25 Gbps transceivers, ideal for high-speed applications. | MITSUBISHI | 3~7 Days | 4,617 | ||
QM150DY-H | High-speed and high-power IGBT module for industrial applications. | MITSUBISHI | 3~7 Days | 6,388 | ||
MG50Q2YS40 | TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT | TOSHIBA | 3~7 Days | 3,164 | ||
M57710-A | A high-power RF amplifier module for mobile radio applications. | MITSUBISHI | Discontinued | 3~7 Days | 3,073 | |
MG400Q1US41 | Ideal for Switching and Motor Control Circuits | TOSHIBA | 3~7 Days | 4,164 | ||
MG50J2YS50 | MG50J2YS50 chip is a high-power switching module used in various applications. | TOSHIBA | Active | 3~7 Days | 5,779 | |
SKIIP11NAB126V1 | Bridge Rectifier and Inverter Unit | SEMIKRON | 3~7 Days | 7,235 | ||
MG75J2YS50 | 75A, 600V N-channel Insulated Gate Bipolar Transistor (IGBT) with 2-94D1A configuration and 7 pins | TOSHIBA | 3~7 Days | 4,638 | ||
SKM100GAL123D | N-Channel Insulated Gate Bipolar Transistor with a 100A I(C) | Semikron | 3~7 Days | 3,788 | ||
STK413-530 | STK413-530 is a class AB dual power amplifier IC commonly used in audio systems. | SANYO | 3~7 Days | 3,618 | ||
SKM150GB123D | Offering unparalleled power handling capabilities, the SKM150GB123D is a formidable choice for industrial and commercial applications | SEMIKRON | 3~7 Days | 6,355 | ||
SCM1110MF | SCM1110MF is a microcontroller chip | SANKEN | 3~7 Days | 6,846 | ||
SKM400GB066D | IGBT Module, NPT, 600V, Semitrans 3 | SEMIKRON | 3~7 Days | 1 | ||
FF2MR12KM1 | Power Field-Effect Transistor, | INFINEON | 3~7 Days | 4,543 | ||
GS-R51212 | 3-OUTPUT 20W DC-DC REG PWR SUPPLY MODULE | STMicroelectronics | 3~7 Days | 3,227 | ||
SKM50GB123D | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN | SEMIKRON | 3~7 Days | 7,195 | ||
6MBP20RTA060-01 | Fuji Power Transistor Module | FUJITSU | 3~7 Days | 3,350 | ||
TL-T2E2 | Tiny flat proximity sensors with a 2mm sensing distance, providing a normally closed output and shielded housing | Omron | Obsolete | 3~7 Days | 8,333 | |
CM800HA-34H | CM800HA-34H: IGBT Module Designed for High Voltage Operation | Mitsubishi Electric | 3~7 Days | 6,163 | ||
CM400DY-66H | CM400DY-66H Mitsubishi power transistor module | Mitsubishi Electric | 3~7 Days | 9,592 | ||
2SD106AI-17 | Featuring advanced CHAdeMO technology, this driver ensures optimal performance and efficiency in industrial applications." | Power Integrations | Obsolete | 3~7 Days | 8,945 | |
TAN250A | Trans RF BJT NPN 60V 30A 3-Pin Case 55AW-1 | Microchip Technology | Obsolete | 3~7 Days | 9,707 | |
MUBW10-06A6K | Module IGBT 600V 11A 50W E1 | Ixys Integrated Circuits Division | Obsolete | 3~7 Days | 5,229 | |
PK200FG160 | PK200FG160: A silicon-controlled rectifier boasting a rated current of 200,000 milliamps and a maximum reverse voltage of 1600 volts | SanRex | Active | 3~7 Days | 9,454 | |
DF30CA160 | ROHS Compliant Rectifiers | Sanrex Corporation | Active | 3~7 Days | 6,157 | |
CSNF151 | 180A current sensors compliant with ROHS standards | Honeywell | Active | 3~7 Days | 6,132 | |
OHD3-110M | Thermostats with Axial Thermal Guard, 110°C, 6W, 110V | Kemet | Active | 3~7 Days | 6,030 | |
UEI30-050-Q12P-C | 30 Watt Converter | MURATA | Active | 3~7 Days | 5,873 | |
STE180N10 | ISOTOP-packaged N-Channel MOSFET rated for 100V and capable of handling up to 180A | Stmicroelectronics | 3~7 Days | 5,090 | ||
OKL-T/6-W12P-C | DC-DC converter | Murata Electronics | Active | 3~7 Days | 3,782 | |
LTS25-NP | Precision Hall Effect Sensor for rectangular mounting | Lem Usa Inc. | 3~7 Days | 3,474 | ||
GP1S53VJ000F | 5mm Phototransistor Transmissive Photointerrupter with 4-Pin | Sharp Microelectronics | 3~7 Days | 2,156 | ||
FB180SA10P | Power Field-Effect Transistor with 180A I(D) and 100V | Vishay | 3~7 Days | 6,691 | ||
EVM31-050A | High-Power Semiconductor Device for Industrial Applications | Fuji Electric Co Ltd | 3~7 Days | 3,814 | ||
7MBR30NF060 | High-power switching device for DC/AC conversio | Fuji Electric Co Ltd | 3~7 Days | 5,682 | ||
7MBI75N-060 | 75A Insulated Gate Bipolar Transistor with 600V Breakdown Voltage | Fuji Electric Co Ltd | 3~7 Days | 6,847 |
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