Module 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
VTM48EH120T010B00 | High current rating of 10A and power output of 135W | Vicor Corporation | ACTIVE | 3~7 Days | 5,871 | |
VTM48EH060T020A00 | VTM2 48/26/55/6/20 I Power Supply | Vicor Corporation | ACTIVE | 3~7 Days | 5,050 | |
TT600N16KOF | TT600N16KOF is a diode SCR module designed to handle high voltages up to 1600V and currents up to 1050A RMS, with a peak current rating of 21000A | Infineon Technologies | ACTIVE | 3~7 Days | 8,216 | |
SKY66404-11 | RF Front End Module | Skyworks Solutions Inc. | ACTIVE | 3~7 Days | 8,669 | |
SDC-CF10G | CompactFlash Sub-GHz Modules featuring Antenna Connections for 802.11g | Laird Connectivity Inc. | ACTIVE | 3~7 Days | 6,572 | |
SCM1265MF | Latest Arrival: SCM1265MF featuring ROHS Certification | Sanken Electric Co., Ltd | 3~7 Days | 2,659 | ||
SCE160DA160 | SCE160DA160 Product Description: 140mA, 100mA, 1.6kV, 1 Unidirectional SCR and 1 Diode - TRIACs ROHS | SanRex Corporation | ACTIVE | 3~7 Days | 5,065 | |
PM-T65W | Fork light barrier with NPN technology and IP64 protection, measuring 0.006 m in length and operating at a voltage range of 5-24 VDC | Panasonic - Bsg | 3~7 Days | 7,640 | ||
PGH150N16 | Features: Chassis mount design, 3-phase configuration, high voltage rating | KYOCERA AVX | OBSOLETE | 3~7 Days | 5,775 | |
OV07695-A17A | Small and affordable camera option for smartphones and tablets | Omnivision Technologies | 3~7 Days | 2,597 | ||
OV05640-A71A | Next-generation imaging solution offering outstanding detail, dynamic range, and color accuracy in a small form factor | Omnivision Technologies | 3~7 Days | 7,757 | ||
NJG1159PHH-TE1 | This product offers a 16dB amplification for enhanced performance in satellite navigation systems | Nisshinbo Micro Devices Inc. | ACTIVE | 3~7 Days | 5,339 | |
NJG1157PCD-TE1 | FEM GNSS RF Front End for GPS and GLONASS Signals | Nisshinbo Micro Devices | NRND | 3~7 Days | 9,540 | |
MTEDFAE004SCA-1P2IT | Embedded solid-state drive | Micron Technology Inc. | OBSOLETE | 3~7 Days | 6,515 | |
MT7682SN | High-performance processor for fast data processing and transmission | MTK | 3~7 Days | 6,566 | ||
MSDM100-16 | Rectifying Bridge Power Module M2-1 | Microsemi Corporation | OBSOLETE | 3~7 Days | 8,810 | |
MIXA600PF650TSF | 1750W 650V 720A IGBT Module | IXYS | OBSOLETE | 3~7 Days | 9,381 | |
FZ1200R45HL3 | N-Channel IGBT module with 4500V and 1.2KA rating | Infineon Technologies | OBSOLETE | 3~7 Days | 9,899 | |
FZ1200R12HE4P | IGBT Transistors for High-Power Industrial Applications with Insulated Gate Bipolar Transistor Technology (FZ1200R12HE4P) | Infineon Technologies | ACTIVE | 3~7 Days | 9,962 | |
FS100R17N3E4 | 00R17N3E4 IGBT Modules LOW POWER ECONO": | Infineon Technologies | ACTIVE | 3~7 Days | 6,945 | |
FP20R06YE3-B4 | Elevate your electronics creations with this pre-ordered AG-EASY2-1 transistor, designed for easy use | Infineon | 3~7 Days | 7,522 | ||
FF900R12IE4P | Insulated Gate Bipolar Transistor Modules | Infineon Technologies | ACTIVE | 3~7 Days | 7,671 | |
FF600R12ME4C | FF600R12ME4C: A high-performance Trans IGBT Module designed for automotive use | Infineon Technologies | NRND | 3~7 Days | 8,108 | |
FF400R17KE4 | 62mm Medium Power IGBT Modules | Infineon Technologies | ACTIVE | 3~7 Days | 6,886 | |
FF1400R12IP4P | High Short Circuit Capability IGBT Module | Infineon Technologies | ACTIVE | 3~7 Days | 5,930 | |
FF1200R12IE5 | Tray Packaged Transistor IGBT Module with 1200V N-Channel and 1.2KA | Infineon Technologies | ACTIVE | 3~7 Days | 9,857 | |
ESP-12S | This device is a wireless module with a frequency of 2.484GHz | rf solutions | ACTIVE | 3~7 Days | 6,431 | |
DKA60KB80 | Discrete Semiconductor Modules 800V 60A | SanRex Corporation | ACTIVE | 3~7 Days | 9,742 | |
DKA60KB160 | 1600V 60A Discrete Semiconductor Modules | SanRex Corporation | ACTIVE | 3~7 Days | 8,167 | |
DD100N16S | Rectifier Module DD100N16S Diode | Infineon Technologies | ACTIVE | 3~7 Days | 5,926 | |
CYBLE-222005-00 | Ideal for smart devices and IoT applications | Infineon Technologies | OBSOLETE | 3~7 Days | 8,693 | |
CSNT651-500 | CSNT651-500 Board Mount Current Sensors | Honeywell Aerospace | 3~7 Days | 3,533 | ||
CM600DX-24T | CM600DX-24T: High-Power IGBT Transistor | Mitsubishi Materials U.S.A. Corporation | 3~7 Days | 4,733 | ||
CM1400DUC-24NF | High-power N-Channel IGBT Module rated for 8925W with 9 pins | Powerex Inc. | OBSOLETE | 3~7 Days | 9,285 | |
CM100TX-24T | 6-PAC NX TYPE IGBT Module | Mitsubishi Electric | Active | 3~7 Days | 6,195 | |
CCS020M12CM2 | SiC six-pack module offering discrete semiconductor elements rated at 1200V and 20A | Wolfspeed, Inc. | OBSOLETE | 3~7 Days | 5,342 | |
BSM400D12P3G002 | 1.2kV 400mA power supply with 2 N-Channel MOSFETs | Rohm Semiconductor | ACTIVE | 3~7 Days | 8,470 | |
BSM180D12P2E002 | 1200V SiC Semiconductor Module: Product BSM180D12P2E002 is a discrete semiconductor module leveraging silicon-carbide (SiC) material | Rohm Semiconductor | ACTIVE | 3~7 Days | 9,316 | |
BSM120C12P2C201 | Optimized design for minimized switching loss and reduced thermal generatio | Rohm Semiconductor | ACTIVE | 3~7 Days | 9,816 | |
BGM11S12F256GA-V2R | The BGM11S12F256GA-V2R is a compact Bluetooth SIP module that supports the 802.15.1 Bluetooth standard | Silicon Labs | ACTIVE | 3~7 Days | 7,027 |
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