產品對比: MT47H32M16HR-3 IT:F vs MT47H32M16HW-25EIT:G vs MT47H32M16HR-25E:G
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零件號
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Manufacturer | MICRON | Micron Technology | Micron Technology |
Package | FBGA-84 | BGA | FBGA |
Description | Exclusively for OEMs and CMs | Low voltage 1.8V operation | High-performance memory module for demanding computing applications, featuring M x DDR DRAM and a fast access time of n |
Stock | 5078 | 4013 | 3668 |
Product Category | IC Chips | DRAM | |
Organization | 32Mx16 | 32MX16 | |
Pin Count | 84 | 84 | |
ECCN (US) | EAR99 | ||
Part Status | Obsolete | ||
Automotive | No | ||
PPAP | No | ||
DRAM Type | DDR2 SDRAM | ||
Chip Density (bit) | 512M | ||
Number of Internal Banks | 4 | ||
Number of Words per Bank | 8M | ||
Number of Bits/Word (bit) | 16 | ||
Data Bus Width (bit) | 16 | ||
Maximum Clock Rate (MHz) | 667 | ||
Maximum Access Time (ns) | 0.45 | ||
Address Bus Width (bit) | 15 | ||
Process Technology | CMOS | ||
Interface Type | SSTL_18 | ||
Minimum Operating Supply Voltage (V) | 1.7 | ||
Typical Operating Supply Voltage (V) | 1.8 | ||
Maximum Operating Supply Voltage (V) | 1.9 | ||
Operating Current (mA) | 250 | ||
Minimum Operating Temperature (°C) | -40 | ||
Maximum Operating Temperature (°C) | 85 | ||
Supplier Temperature Grade | Industrial | ||
Number of I/O Lines (bit) | 16 | ||
Packaging | Tray | ||
Mounting | Surface Mount | ||
Package Height | 0.8 | ||
Package Width | 8 | ||
Package Length | 12.5 | ||
PCB changed | 84 | ||
Standard Package Name | BGA | ||
Supplier Package | FBGA | ||
Lead Shape | Ball | ||
Pbfree Code | No | ||
Rohs Code | No | ||
Part Life Cycle Code | Obsolete | ||
Ihs Manufacturer | MICRON TECHNOLOGY INC | ||
Part Package Code | BGA | ||
Package Description | 8 X 12.50 MM, FBGA-84 | ||
Reach Compliance Code | not_compliant | ||
ECCN Code | EAR99 | ||
HTS Code | 8542.32.00.28 | ||
Access Mode | FOUR BANK PAGE BURST | ||
Access Time-Max | 0.4 ns | ||
Additional Feature | AUTO/SELF REFRESH | ||
Clock Frequency-Max (fCLK) | 400 MHz | ||
I/O Type | COMMON | ||
Interleaved Burst Length | 4,8 | ||
JESD-30 Code | R-PBGA-B84 | ||
JESD-609 Code | e0 | ||
Length | 12.5 mm | ||
Memory Density | 536870912 bit | ||
Memory IC Type | DDR2 DRAM | ||
Memory Width | 16 | ||
Number of Functions | 1 | ||
Number of Ports | 1 | ||
Number of Terminals | 84 | ||
Number of Words | 33554432 words | ||
Number of Words Code | 32000000 | ||
Operating Mode | SYNCHRONOUS | ||
Operating Temperature-Max | 85 °C | ||
Operating Temperature-Min | -40 °C | ||
Output Characteristics | 3-STATE | ||
Package Body Material | PLASTIC/EPOXY | ||
Package Code | TFBGA | ||
Package Equivalence Code | BGA84,9X15,32 | ||
Package Shape | RECTANGULAR | ||
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | ||
Peak Reflow Temperature (Cel) | 235 | ||
Power Supplies | 1.8 V | ||
Qualification Status | Not Qualified | ||
Refresh Cycles | 8192 | ||
Seated Height-Max | 1.2 mm | ||
Self Refresh | YES | ||
Sequential Burst Length | 4,8 | ||
Standby Current-Max | 0.007 A | ||
Supply Current-Max | 0.215 mA | ||
Supply Voltage-Max (Vsup) | 1.9 V | ||
Supply Voltage-Min (Vsup) | 1.7 V | ||
Supply Voltage-Nom (Vsup) | 1.8 V | ||
Surface Mount | YES | ||
Technology | CMOS | ||
Temperature Grade | INDUSTRIAL | ||
Terminal Finish | Tin/Lead/Silver (Sn/Pb/Ag) | ||
Terminal Form | BALL | ||
Terminal Pitch | 0.8 mm | ||
Terminal Position | BOTTOM | ||
Time@Peak Reflow Temperature-Max (s) | 30 | ||
Width | 8 mm | ||
Series | MT47H | ||
Brand | Micron | ||
Product Type | DRAM | ||
Subcategory | Memory & Data Storage |
零件號
關鍵字: MT47H
零件號 "MT47H" 回傅 22 個結果; 所有結果都匹配且頭部為 "MT47H".
零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|---|
MT47H128M8SH-25E IT:M |
IT:M MT47H128M8SH-25E DDR2 Memory Component |
Micron Technology | FBGA-60 | 3~7 天 | 4,353.00 | ||
MT47H64M16HR-3 IT:H |
High-speed 1Gbit Memory Device with 450 ps Timing |
Micron Technology | FBGA-84 | 3~7 天 | 4,481.00 | ||
MT47H128M16RT-25E |
High-performance DDR3 SDRAM chip for optimized data processing |
MICRON | FBGA84 | Active | 3~7 天 | 7,115.00 | |
MT47H32M16NF-25EIT:H |
32 Meg x 16 DDR DRAM |
MICRON | FBGA84 | ACTIVE | 3~7 天 | 7,889.00 | |
MT47H64M16HR-25:H |
400MHz operating frequency |
Micron Technology | FBGA-84 | 3~7 天 | 6,036.00 | ||
MT47H64M16HR-3IT:H |
High-speed 1Gbit Memory Device with 450 ps Timing |
Micron Technology | TFBGA-84 | 3~7 天 | 5,098.00 | ||
MT47H64M16HR-25E IT:H |
1Gbit DDR2 SDRAM Chip |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 天 | 7,172.00 | |
MT47H32M16HW-25E IT:G |
Low voltage 1.8V operation |
Micron Technology | TFBGA-84 | 3~7 天 | 5,948.00 | ||
MT47H128M8CF-25E IT:H |
This DRAM chip is packaged in a 60-pin FBGA format, making it suitable for various electronic devices |
MICRON | BGA-60 | 3~7 天 | 7,163.00 | ||
MT47H64M16HR-25E:H |
Advanced memory solution for data-intensive industries, featuring advanced error detection and correction |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 天 | 5,429.00 | |
MT47H32M16HR-25E IT:G |
IT:G Memory Technology 512Mbit DDR2 SDRAM Chip |
Micron Technology | TFBGA-84 | OBSOLETE | 3~7 天 | 7,765.00 | |
MT47H128M16HG-3IT |
CMOS technology |
MICRON | FBGA | 3~7 天 | 7,138.00 | ||
MT47H64M16HR-3:H |
DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R/Tray DRAM Chip |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 天 | 3,883.00 | |
MT47H128M16HG-3IT:A |
DDR2 SDRAM Chip |
Micron Technology | FBGA | OBSOLETE | 3~7 天 | 7,630.00 | |
MT47H32M16HR-25E IT:G TR |
Synchronous dynamic random-access memory |
Micron Technology | FBGA | 3~7 天 | 7,849.00 | ||
MT47H64M16HR-3IT |
Advanced Integrated Circuit, offering 1 gigabit capacity for parallel data processing |
Micron | FBGA-84 | 3~7 天 | 4,403.00 | ||
MT47H32M16NF-25E IT:H |
32 Meg x 16 DDR DRAM |
Micron Technology | FBGA-84 | 3~7 天 | 7,667.00 | ||
MT47H128M16RT-25E:C |
Storage conditions: -25 to 85 degrees |
Micron Technology | FBGA-84 | ACTIVE | 3~7 天 | 6,169.00 | |
MT47H32M16NF-25E AIT:H |
Advanced Interconnect Technology for High-speed Computing |
MICRON | 84-TFBGA | OBSOLETE | 3~7 天 | 7,510.00 | |
MT47H64M16NF-25E AIT:M |
The MT47H64M16NF-25E AIT:M offers fast data transfer rates and reliable performance." |
Micron Technology | FBGA-84 | Active | 3~7 天 | 7,760.00 | |
MT47H128M8CF-25:H |
PBGA60-packaged DDR DRAM chip with 128MX8 configuration, 0.4ns access time, CMOS technology integration |
Micron Technology | TFBGA-60 | 3~7 天 | 6,982.00 | ||
MT47H64M16HR-3 IT:G |
84-Pin FBGA Tray Mount DRAM Chip for DDR2 SDRAM |
MICRON | FBGA84 | 3~7 天 | 4,092.00 |