產品對比: MT47H128M8SH-25E IT:M vs MT47H128M16HG-3 vs MT47H128M16RT-25E
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零件號
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Manufacturer | Micron Technology | MICRON | MICRON |
Package | FBGA-60 | FBGA84 | FBGA84 |
Description | IT:M MT47H128M8SH-25E DDR2 Memory Component | Ddr Dram, 128MX16, 0.45NS, Cmos, PBGA84, 11.50 X 14 Mm, Rohs Compliant, FBGA-84 | High-performance DDR3 SDRAM chip for optimized data processing |
Stock | 4353 | 7799 | 7115 |
Product Category | DRAM | Memory ICs | |
Package / Case | FBGA-60 | 84-TFBGA | |
Memory Size | 1 Gbit | 2Gbit | |
Access Time | 400 ps | 400 ps | |
Series | MT47H | - | |
RoHS | Details | ||
Type | SDRAM - DDR2 | ||
Mounting Style | SMD/SMT | ||
Data Bus Width | 8 bit | ||
Organization | 128 M x 8 | ||
Maximum Clock Frequency | 400 MHz | ||
Supply Voltage - Max | 1.9 V | ||
Supply Voltage - Min | 1.7 V | ||
Supply Current - Max | 70 mA | ||
Minimum Operating Temperature | - 40 C | ||
Maximum Operating Temperature | + 95 C | ||
Brand | Micron | ||
Moisture Sensitive | Yes | ||
Product Type | DRAM | ||
Factory Pack Quantity | 1518 | ||
Subcategory | Memory & Data Storage | ||
Unit Weight | 0.071483 oz | ||
Category | Integrated Circuits (ICs)MemoryMemory | ||
Mfr | Micron Technology Inc. | ||
Product Status | Active | ||
Programmable | Not Verified | ||
Memory Type | Volatile | ||
Memory Format | DRAM | ||
Technology | SDRAM - DDR2 | ||
Memory Organization | 128M x 16 | ||
Memory Interface | Parallel | ||
Clock Frequency | 400 MHz | ||
Write Cycle Time - Word, Page | 15ns | ||
Voltage - Supply | 1.7V ~ 1.9V | ||
Operating Temperature | 0°C ~ 85°C (TC) | ||
Mounting Type | Surface Mount | ||
Supplier Device Package | 84-FBGA (9x12.5) | ||
Base Product Number | MT47H128M16 |
零件號
關鍵字: MT47H
零件號 "MT47H" 回傅 21 個結果; 所有結果都匹配且頭部為 "MT47H".
零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|---|
MT47H64M16HR-3 IT:H |
High-speed 1Gbit Memory Device with 450 ps Timing |
Micron Technology | FBGA-84 | 3~7 天 | 4,481.00 | ||
MT47H32M16HR-25E:G |
High-performance memory module for demanding computing applications, featuring M x DDR DRAM and a fast access time of n |
Micron Technology | FBGA | 3~7 天 | 3,668.00 | ||
MT47H32M16NF-25EIT:H |
32 Meg x 16 DDR DRAM |
MICRON | FBGA84 | ACTIVE | 3~7 天 | 7,889.00 | |
MT47H64M16HR-25:H |
400MHz operating frequency |
Micron Technology | FBGA-84 | 3~7 天 | 6,036.00 | ||
MT47H64M16HR-3IT:H |
High-speed 1Gbit Memory Device with 450 ps Timing |
Micron Technology | TFBGA-84 | 3~7 天 | 5,098.00 | ||
MT47H64M16HR-25E IT:H |
1Gbit DDR2 SDRAM Chip |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 天 | 7,172.00 | |
MT47H32M16HW-25E IT:G |
Low voltage 1.8V operation |
Micron Technology | TFBGA-84 | 3~7 天 | 5,948.00 | ||
MT47H128M8CF-25E IT:H |
This DRAM chip is packaged in a 60-pin FBGA format, making it suitable for various electronic devices |
MICRON | BGA-60 | 3~7 天 | 7,163.00 | ||
MT47H64M16HR-25E:H |
Advanced memory solution for data-intensive industries, featuring advanced error detection and correction |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 天 | 5,429.00 | |
MT47H32M16HR-25E IT:G |
IT:G Memory Technology 512Mbit DDR2 SDRAM Chip |
Micron Technology | TFBGA-84 | OBSOLETE | 3~7 天 | 7,765.00 | |
MT47H128M16HG-3IT |
CMOS technology |
MICRON | FBGA | 3~7 天 | 7,138.00 | ||
MT47H64M16HR-3:H |
DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R/Tray DRAM Chip |
Micron Technology | FBGA-84 | OBSOLETE | 3~7 天 | 3,883.00 | |
MT47H128M16HG-3IT:A |
DDR2 SDRAM Chip |
Micron Technology | FBGA | OBSOLETE | 3~7 天 | 7,630.00 | |
MT47H32M16HR-25E IT:G TR |
Synchronous dynamic random-access memory |
Micron Technology | FBGA | 3~7 天 | 7,849.00 | ||
MT47H64M16HR-3IT |
Advanced Integrated Circuit, offering 1 gigabit capacity for parallel data processing |
Micron | FBGA-84 | 3~7 天 | 4,403.00 | ||
MT47H32M16NF-25E IT:H |
32 Meg x 16 DDR DRAM |
Micron Technology | FBGA-84 | 3~7 天 | 7,667.00 | ||
MT47H128M16RT-25E:C |
Storage conditions: -25 to 85 degrees |
Micron Technology | FBGA-84 | ACTIVE | 3~7 天 | 6,169.00 | |
MT47H32M16NF-25E AIT:H |
Advanced Interconnect Technology for High-speed Computing |
MICRON | 84-TFBGA | OBSOLETE | 3~7 天 | 7,510.00 | |
MT47H64M16NF-25E AIT:M |
The MT47H64M16NF-25E AIT:M offers fast data transfer rates and reliable performance." |
Micron Technology | FBGA-84 | Active | 3~7 天 | 7,760.00 | |
MT47H128M8CF-25:H |
PBGA60-packaged DDR DRAM chip with 128MX8 configuration, 0.4ns access time, CMOS technology integration |
Micron Technology | TFBGA-60 | 3~7 天 | 6,982.00 | ||
MT47H64M16HR-3 IT:G |
84-Pin FBGA Tray Mount DRAM Chip for DDR2 SDRAM |
MICRON | FBGA84 | 3~7 天 | 4,092.00 |