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產品對比: MT41J256M8DA-125:M vs MT41J256M16HA-107:E vs MT41J256M8HX-187E:D
隱藏相同的屬性
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全部
零件號
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| Manufacturer | MICRON | Micron Technology | MICRON |
| Package | FBGA8x10.5-78 | TFBGA-96 | 78-TFBGA |
| Description | Reliable and scalable data storage for demanding enterprise environment | Type: Module MT41J256M16HA-107:E | Lead-free and FBGA-78 design |
| Stock | 4180 | 7545 | 7526 |
| Part Life Cycle Code | Obsolete | Obsolete | |
| Part Package Code | BGA | BGA | |
| Pin Count | 78 | 78 | |
| Reach Compliance Code | not_compliant | ||
| ECCN Code | EAR99 | EAR99 | |
| HTS Code | 8542.32.00.36 | 8542.32.00.36 | |
| Access Mode | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PBGA-B78 | R-PBGA-B78 | |
| JESD-609 Code | e1 | e1 | |
| Length | 10.5 mm | 11.5 mm | |
| Memory Density | 2147483648 bit | 2147483648 bit | |
| Memory IC Type | DDR DRAM | DDR3 DRAM | |
| Memory Width | 8 | 8 | |
| Number of Functions | 1 | 1 | |
| Number of Ports | 1 | 1 | |
| Number of Terminals | 78 | 78 | |
| Number of Words | 268435456 words | 268435456 words | |
| Number of Words Code | 256000000 | 256000000 | |
| Operating Mode | SYNCHRONOUS | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | 85 °C | |
| Organization | 256MX8 | 256MX8 | |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | |
| Package Code | TFBGA | TFBGA | |
| Package Shape | RECTANGULAR | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Seated Height-Max | 1.2 mm | 1.2 mm | |
| Self Refresh | YES | YES | |
| Supply Voltage-Max (Vsup) | 1.575 V | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | 1.5 V | |
| Surface Mount | YES | YES | |
| Technology | CMOS | CMOS | |
| Temperature Grade | OTHER | OTHER | |
| Terminal Finish | TIN SILVER COPPER | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | BALL | |
| Terminal Pitch | 0.8 mm | 0.8 mm | |
| Terminal Position | BOTTOM | BOTTOM | |
| Width | 8 mm | 9 mm | |
| Product Category | DRAM | ||
| Series | MT41J | ||
| Brand | Micron | ||
| Product Type | DRAM | ||
| Subcategory | Memory & Data Storage | ||
| Pbfree Code | Yes | ||
| Rohs Code | Yes | ||
| Access Time-Max | 0.3 ns | ||
| Clock Frequency-Max (fCLK) | 533 MHz | ||
| I/O Type | COMMON | ||
| Interleaved Burst Length | 8 | ||
| Moisture Sensitivity Level | 3 | ||
| Output Characteristics | 3-STATE | ||
| Package Equivalence Code | BGA78,9X13,32 | ||
| Peak Reflow Temperature (Cel) | 260 | ||
| Power Supplies | 1.5 V | ||
| Qualification Status | Not Qualified | ||
| Refresh Cycles | 8192 | ||
| Sequential Burst Length | 8 | ||
| Standby Current-Max | 0.012 A | ||
| Supply Current-Max | 0.335 mA | ||
| Time@Peak Reflow Temperature-Max (s) | 30 |
零件號
關鍵字: MT41J
零件號 "MT41J" 回傅 20 個結果; 所有結果都匹配且頭部為 "MT41J".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| MT41J64M16JT-125:G |
FBGA-96 MT41J64M16JT-125:G DDR SDRAM ROHS |
Micron Technology | 96-TFBGA | OBSOLETE | 3~7 天 | 6,251.00 | |
| MT41J128M16JT-125 |
Advanced technology enables faster data transfer rates up to Mbp |
Micron Technology Inc | FBGA96 | 3~7 天 | 5,053.00 | ||
| MT41J128M16HA-125:D |
DDR3 SDRAM 2Gbit DRAM Chip 128Mx16 |
MICRON | FBGA9x14-96 | 3~7 天 | 4,829.00 | ||
| MT41J128M8JP-15E:G |
Low-power consumption and high-density design make it ideal for mobile devices |
MICRON | FBGA-96 | 3~7 天 | 6,975.00 | ||
| MT41J128M8JP-125:G |
128Mx8, 0.1ns, 8 x 11.50 mm |
micron technology | TFBGA78 | OBSOLETE | 3~7 天 | 7,237.00 | |
| MT41J256M16HA-093:E |
DDR3 SDRAM DRAM chip |
Micron Technology | TFBGA-96 | 3~7 天 | 3,249.00 | ||
| MT41J128M16HA-15E:D |
2 gigabyte IC DRAM module housed in a 96-ball grid array package, specifically engineered for parallel computing tasks |
Micron Technology | BGA | 3~7 天 | 3,241.00 | ||
| MT41J256M16HA-125:E |
MT41J256M16HA-125:E is a DDR3 SDRAM DRAM chip with a capacity of 4Gbit |
Micron Technology | BGA | 3~7 天 | 7,749.00 | ||
| MT41J64M16TW-093:J |
High-Density CMOS Memory Module |
Micron Technology | FBGA-96 | 3~7 天 | 7,992.00 | ||
| MT41J128M16JT-125:K |
Technology: DRAM |
Micron Technology | FBGA-96 | ACTIVE | 3~7 天 | 6,957.00 | |
| MT41J64M16JT-15E:G |
Ninety-six ball plastic ball grid array packaged double data rate synchronous dynamic random access memory |
Micron Technology | TFBGA-96 | OBSOLETE | 3~7 天 | 6,927.00 | |
| MT41J128M16JT-093G:K |
128 megabyte x 16 dynamic random access memory with ball grid array packaging |
MICRON | 96-TFBGA | 3~7 天 | 5,949.00 | ||
| MT41J64M16JT-15E AAT:G |
Cutting-edge RAM solution for improved system performance and responsivenes |
MICRON | 96-TFBGA | 3~7 天 | 6,892.00 | ||
| MT41J512M8THD-15E:D |
Compact 78-Pin FBGA package |
MICRON | FBGA-78 | 3~7 天 | 3,427.00 | ||
| MT41J64M16JT-15E IT:G |
Enhanced data transfer and capacity for improved system performance |
Micron Technology | TFBGA-96 | 3~7 天 | 5,362.00 | ||
| MT41J256M16RE-15E:D |
High-performance DDR DRAM solution for demanding applications |
MICRON | FBGA10x14-96 | 3~7 天 | 7,604.00 | ||
| MT41J128M16JT-093:K |
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA Tray |
Micron Technology | BGA | ACTIVE | 3~7 天 | 6,822.00 | |
| MT41J64M16JT-125G |
FBGA-96 MT41J64M16JT-125:G DDR SDRAM ROHS |
MICRON | BGA | 3~7 天 | 6,898.00 | ||
| MT41J64M16LA |
MT41J64M16LA is a DDR3 SDRAM chip with 4Gb capacity and a 1.5V power supply voltage. |
MICRON | FBGA | 3~7 天 | 7,828.00 | ||
| MT41J256M16HA-093 |
MT41J256M16HA-093 is a DDR3 SDRAM chip with 2GB capacity, suitable for high-performance computing applications. |
MICRON | BGA | 3~7 天 | 5,435.00 |