產品對比: MT41J256M8DA-125:K vs MT41J256M16HA-107:E vs MT41J256M8HX-187E:D
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零件號
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Manufacturer | Micron Technology | Micron Technology | MICRON |
Package | FBGA-78 | TFBGA-96 | 78-TFBGA |
Description | DRAM DDR3 2G 256MX8 FBGA | Type: Module MT41J256M16HA-107:E | Lead-free and FBGA-78 design |
Stock | 4438 | 7545 | 7526 |
Product Category | DRAM | DRAM | |
Organization | 256 M x 8 | 256MX8 | |
Series | MT41J | MT41J | |
Brand | Micron | Micron | |
Product Type | DRAM | DRAM | |
Subcategory | Memory & Data Storage | Memory & Data Storage | |
RoHS | Details | ||
Type | SDRAM - DDR3 | ||
Mounting Style | SMD/SMT | ||
Package / Case | FBGA-78 | ||
Data Bus Width | 8 bit | ||
Memory Size | 2 Gbit | ||
Maximum Clock Frequency | 800 MHz | ||
Access Time | 13.75 ns | ||
Supply Voltage - Max | 1.575 V | ||
Supply Voltage - Min | 1.425 V | ||
Supply Current - Max | 56 mA | ||
Minimum Operating Temperature | 0 C | ||
Maximum Operating Temperature | + 95 C | ||
Moisture Sensitive | Yes | ||
Factory Pack Quantity | 1440 | ||
Unit Weight | 0.092022 oz | ||
Pbfree Code | Yes | ||
Rohs Code | Yes | ||
Part Life Cycle Code | Obsolete | ||
Part Package Code | BGA | ||
Pin Count | 78 | ||
Reach Compliance Code | not_compliant | ||
ECCN Code | EAR99 | ||
HTS Code | 8542.32.00.36 | ||
Access Mode | MULTI BANK PAGE BURST | ||
Access Time-Max | 0.3 ns | ||
Additional Feature | AUTO/SELF REFRESH | ||
Clock Frequency-Max (fCLK) | 533 MHz | ||
I/O Type | COMMON | ||
Interleaved Burst Length | 8 | ||
JESD-30 Code | R-PBGA-B78 | ||
JESD-609 Code | e1 | ||
Length | 11.5 mm | ||
Memory Density | 2147483648 bit | ||
Memory IC Type | DDR3 DRAM | ||
Memory Width | 8 | ||
Moisture Sensitivity Level | 3 | ||
Number of Functions | 1 | ||
Number of Ports | 1 | ||
Number of Terminals | 78 | ||
Number of Words | 268435456 words | ||
Number of Words Code | 256000000 | ||
Operating Mode | SYNCHRONOUS | ||
Operating Temperature-Max | 85 °C | ||
Output Characteristics | 3-STATE | ||
Package Body Material | PLASTIC/EPOXY | ||
Package Code | TFBGA | ||
Package Equivalence Code | BGA78,9X13,32 | ||
Package Shape | RECTANGULAR | ||
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | ||
Peak Reflow Temperature (Cel) | 260 | ||
Power Supplies | 1.5 V | ||
Qualification Status | Not Qualified | ||
Refresh Cycles | 8192 | ||
Seated Height-Max | 1.2 mm | ||
Self Refresh | YES | ||
Sequential Burst Length | 8 | ||
Standby Current-Max | 0.012 A | ||
Supply Current-Max | 0.335 mA | ||
Supply Voltage-Max (Vsup) | 1.575 V | ||
Supply Voltage-Min (Vsup) | 1.425 V | ||
Supply Voltage-Nom (Vsup) | 1.5 V | ||
Surface Mount | YES | ||
Technology | CMOS | ||
Temperature Grade | OTHER | ||
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | ||
Terminal Form | BALL | ||
Terminal Pitch | 0.8 mm | ||
Terminal Position | BOTTOM | ||
Time@Peak Reflow Temperature-Max (s) | 30 | ||
Width | 9 mm |
零件號
關鍵字: MT41J
零件號 "MT41J" 回傅 21 個結果; 所有結果都匹配且頭部為 "MT41J".
零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|---|
MT41J64M16JT-125:G |
FBGA-96 MT41J64M16JT-125:G DDR SDRAM ROHS |
Micron Technology | 96-TFBGA | OBSOLETE | 3~7 天 | 6,251.00 | |
MT41J128M16JT-125 |
Advanced technology enables faster data transfer rates up to Mbp |
Micron Technology Inc | FBGA96 | 3~7 天 | 5,053.00 | ||
MT41J128M16HA-125:D |
DDR3 SDRAM 2Gbit DRAM Chip 128Mx16 |
MICRON | FBGA9x14-96 | 3~7 天 | 4,829.00 | ||
MT41J128M8JP-15E:G |
Low-power consumption and high-density design make it ideal for mobile devices |
MICRON | FBGA-96 | 3~7 天 | 6,975.00 | ||
MT41J128M8JP-125:G |
128Mx8, 0.1ns, 8 x 11.50 mm |
micron technology | TFBGA78 | OBSOLETE | 3~7 天 | 7,237.00 | |
MT41J256M16HA-093:E |
DDR3 SDRAM DRAM chip |
Micron Technology | TFBGA-96 | 3~7 天 | 3,249.00 | ||
MT41J128M16HA-15E:D |
2 gigabyte IC DRAM module housed in a 96-ball grid array package, specifically engineered for parallel computing tasks |
Micron Technology | BGA | 3~7 天 | 3,241.00 | ||
MT41J256M16HA-125:E |
MT41J256M16HA-125:E is a DDR3 SDRAM DRAM chip with a capacity of 4Gbit |
Micron Technology | BGA | 3~7 天 | 7,749.00 | ||
MT41J64M16TW-093:J |
High-Density CMOS Memory Module |
Micron Technology | FBGA-96 | 3~7 天 | 7,992.00 | ||
MT41J128M16JT-125:K |
Technology: DRAM |
Micron Technology | FBGA-96 | ACTIVE | 3~7 天 | 6,957.00 | |
MT41J64M16JT-15E:G |
Ninety-six ball plastic ball grid array packaged double data rate synchronous dynamic random access memory |
Micron Technology | TFBGA-96 | OBSOLETE | 3~7 天 | 6,927.00 | |
MT41J128M16JT-093G:K |
128 megabyte x 16 dynamic random access memory with ball grid array packaging |
MICRON | 96-TFBGA | 3~7 天 | 5,949.00 | ||
MT41J256M8DA-125:M |
Reliable and scalable data storage for demanding enterprise environment |
MICRON | FBGA8x10.5-78 | 3~7 天 | 4,180.00 | ||
MT41J64M16JT-15E AAT:G |
Cutting-edge RAM solution for improved system performance and responsivenes |
MICRON | 96-TFBGA | 3~7 天 | 6,892.00 | ||
MT41J512M8THD-15E:D |
Compact 78-Pin FBGA package |
MICRON | FBGA-78 | 3~7 天 | 3,427.00 | ||
MT41J64M16JT-15E IT:G |
Enhanced data transfer and capacity for improved system performance |
Micron Technology | TFBGA-96 | 3~7 天 | 5,362.00 | ||
MT41J256M16RE-15E:D |
High-performance DDR DRAM solution for demanding applications |
MICRON | FBGA10x14-96 | 3~7 天 | 7,604.00 | ||
MT41J128M16JT-093:K |
DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V 96-Pin FBGA Tray |
Micron Technology | BGA | ACTIVE | 3~7 天 | 6,822.00 | |
MT41J64M16JT-125G |
FBGA-96 MT41J64M16JT-125:G DDR SDRAM ROHS |
MICRON | BGA | 3~7 天 | 6,898.00 | ||
MT41J64M16LA |
MT41J64M16LA is a DDR3 SDRAM chip with 4Gb capacity and a 1.5V power supply voltage. |
MICRON | FBGA | 3~7 天 | 7,828.00 | ||
MT41J256M16HA-093 |
MT41J256M16HA-093 is a DDR3 SDRAM chip with 2GB capacity, suitable for high-performance computing applications. |
MICRON | BGA | 3~7 天 | 5,435.00 |