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產品對比: MT25QL512ABA8ESF-0SIT vs MT25QL512ABB8ESF-0SIT vs MT25QL512ABA8E12-0SIT
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零件號
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| Manufacturer | Micron Technology | Micron Technology | MICRON |
| Package | SOP2-16 | SOP2-16 | BGA |
| Description | The MT25QL512ABA8ESF-0SIT is a 3V/3.3V flash memory chip with a total storage capacity of 512M-bit | Offers high-speed data transfer | 12 megabit x 1, plastic ball grid array 24, 6 by 8 millimeters, compliant with Restriction of Hazardous Substances Directive |
| Stock | 3253 | 3620 | 7907 |
| Package / Case | SOP2-16 | SOP2-16 | 24-TBGA |
| Memory Size | 512 Mbit | 512 Mbit | 512Mbit |
| Organization | 64 M x 8 | 64 M x 8 | 512MX1 |
| Product Category | NOR Flash | NOR Flash | |
| Mounting Style | SMD/SMT | SMD/SMT | |
| Series | MT25QL | MT25QL | |
| Supply Voltage - Min | 2.7 V | 2.7 V | |
| Supply Voltage - Max | 3.6 V | 3.6 V | |
| Active Read Current - Max | 50 mA | 35 mA | |
| Interface Type | SPI | SPI | |
| Maximum Clock Frequency | 133 MHz | 133 MHz | |
| Data Bus Width | 8 bit | 8 bit | |
| Timing Type | Synchronous | Synchronous | |
| Minimum Operating Temperature | - 40 C | - 40 C | |
| Maximum Operating Temperature | + 85 C | + 85 C | |
| Brand | Micron | Micron | |
| Product Type | NOR Flash | NOR Flash | |
| Speed | 133 MHz | 133 MHz | |
| Subcategory | Memory & Data Storage | Memory & Data Storage | |
| RoHS | Details | ||
| Moisture Sensitive | Yes | ||
| Factory Pack Quantity | 1440 | ||
| Unit Weight | 0.231341 oz | ||
| Rohs Code | Yes | ||
| Part Life Cycle Code | Obsolete | ||
| Reach Compliance Code | compliant | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8542.32.00.51 | ||
| Clock Frequency-Max (fCLK) | 133 MHz | ||
| JESD-30 Code | R-PBGA-B24 | ||
| Length | 8 mm | ||
| Memory Density | 536870912 bit | ||
| Memory IC Type | FLASH | ||
| Memory Width | 1 | ||
| Number of Functions | 1 | ||
| Number of Terminals | 24 | ||
| Number of Words | 536870912 words | ||
| Number of Words Code | 512000000 | ||
| Operating Mode | SYNCHRONOUS | ||
| Operating Temperature-Max | 85 °C | ||
| Operating Temperature-Min | -40 °C | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Code | TBGA | ||
| Package Shape | RECTANGULAR | ||
| Package Style | GRID ARRAY, THIN PROFILE | ||
| Parallel/Serial | SERIAL | ||
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | ||
| Programming Voltage | 3 V | ||
| Seated Height-Max | 1.2 mm | ||
| Supply Voltage-Max (Vsup) | 3.6 V | ||
| Supply Voltage-Min (Vsup) | 2.7 V | ||
| Supply Voltage-Nom (Vsup) | 3 V | ||
| Surface Mount | YES | ||
| Technology | CMOS | ||
| Temperature Grade | INDUSTRIAL | ||
| Terminal Form | BALL | ||
| Terminal Pitch | 1 mm | ||
| Terminal Position | BOTTOM | ||
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | ||
| Type | NOR TYPE | ||
| Width | 6 mm | ||
| Product Status | Obsolete | ||
| Programmable | Not Verified | ||
| Memory Type | Non-Volatile | ||
| Memory Format | FLASH | ||
| Memory Organization | 64M x 8 | ||
| Memory Interface | SPI - Quad I/O | ||
| Clock Frequency | 133 MHz | ||
| Write Cycle Time - Word, Page | 8ms, 2.8ms | ||
| Voltage - Supply | 2.7V ~ 3.6V | ||
| Operating Temperature | -40°C ~ 85°C (TA) | ||
| Mounting Type | Surface Mount | ||
| Supplier Device Package | 24-T-PBGA (6x8) | ||
| Base Product Number | MT25QL512 |
零件號
關鍵字: MT25Q
零件號 "MT25Q" 回傅 22 個結果; 所有結果都匹配且頭部為 "MT25Q".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| MT25QL512ABB1EW9-0SIT |
This product is a FLASH memory chip with a capacity of 512MX1, packaged in a PDSO8 form factor |
Micron | WDFN-8 | 3~7 天 | 3,709.00 | ||
| MT25QL01GBBB8E12-0SIT |
Gbit, 128M x 8bit |
Micron Technology | T-PBGA-24 | 3~7 天 | 5,232.00 | ||
| MT25QU256ABA1EW9-0SIT |
256 Mbit capacity with 32M x 8bit organization |
Micron Technology | WDFN-8 | 3~7 天 | 6,830.00 | ||
| MT25QL01GBBB1EW9-0SIT |
5QL01GBBB1EW9-0SIT |
Micron Technology | WDFN-8 | 3~7 天 | 7,181.00 | ||
| MT25QU256ABA8E12-1SIT |
High-density storage solution for embedded systems and IoT applications |
Micron Technology | BGA | 3~7 天 | 5,767.00 | ||
| MT25QU512ABB8E12-0SIT |
High-speed 6ns memory module |
Micron Technology | TPBGA-24 | 3~7 天 | 4,857.00 | ||
| MT25QU256ABA1EW7-0SIT |
NOR Flash Memory with Serial Interface |
Micron Technology | WDFN-8 | ACTIVE | 3~7 天 | 7,050.00 | |
| MT25QL128ABA1ESE-MSIT |
5QL128ABA1ESE-MSIT 128M-bit NOR Flash Memory Dual Quad 6ns 8-Pin SOP-II Tray |
Micron Technology | SOP | 3~7 天 | 6,731.00 | ||
| MT25QU01GBBB8E12-0AAT |
256Mbit SPI Flash |
Micron Technology | BGA | 3~7 天 | 5,691.00 | ||
| MT25QU02GCBB8E12-0SIT |
G-bit, 1.8V operation |
Micron Technology | TPBGA-24 | 3~7 天 | 7,339.00 | ||
| MT25QL02GCBB8E12-0SIT |
Ideal for a variety of electronic devices requiring high-speed data storage |
Micron Technology | T-PBGA-24 | 3~7 天 | 5,000.00 | ||
| MT25QL256ABA8ESF-0SIT |
56M-bit, 3V/3.3V, 6ns |
Micron Technology | SOP2-16 | 3~7 天 | 6,721.00 | ||
| MT25QU01GBBB8E12-0SIT |
Suitable for electronic devices |
Micron Technology | T-PBGA-24 | 3~7 天 | 3,960.00 | ||
| MT25QL256ABA1EW9-0SIT |
SPI, Dual SPI, Quad SPI compatible |
Micron Technology | WDFN-8 | ACTIVE | 3~7 天 | 9,593.00 | |
| MT25QL128ABA8ESF-0SIT |
Flash IC SPI Flash NOR SLC 32MX4 SOIC Tray |
Micron Technology | SOP2-16 | 3~7 天 | 4,422.00 | ||
| MT25QL128ABA8E12-0SIT |
Temperature range: -40 to 85 degrees Celsius |
Micron | BGA | 3~7 天 | 5,554.00 | ||
| MT25QL128ABA1EW7-0SIT |
Serial peripheral interface |
Micron Technology | WDFN-8 | ACTIVE | 3~7 天 | 9,094.00 | |
| MT25QL128ABA8ESF-0SIT TR |
32Mx4 NOR Flash |
Micron Technology | SOP-16 | 3~7 天 | 6,476.00 | ||
| MT25QL01GBBB8ESF-0SIT |
NOR flash memory |
Micron | SOP2-16 | 3~7 天 | 6,426.00 | ||
| MT25QL256ABA8E12-1SIT |
Non-volatile data storage option |
Micron Technology | TPBGA-24 | 3~7 天 | 7,179.00 | ||
| MT25QU512ABB8ESF-0SIT |
Wide Memory Capacity of 512M x 1-bit |
Micron Technology | SOP-16 | ACTIVE | 3~7 天 | 5,604.00 | |
| MT25QU01GBBB1EW9-0SIT |
NOR Flash SPI Flash |
Micron Technology | WDFN-8 | 3~7 天 | 6,404.00 |