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產品對比: K4H511638C-UCCC vs K4H511638J-LCB3 vs K4H511638J-LCCC
隱藏相同的屬性
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全部
零件號
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| Manufacturer | SAMSUNG | SAMSUNG | SAMSUNG |
| Package | TSSOP-66 | TSOP66 | TSOP-66 |
| Description | DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, | Ddr Dram, 32MX16, 0.7NS, Cmos, PDSO66 | French Electronic Distributor since 1988 |
| Stock | 3139 | 7343 | 5752 |
| Product Category | IC Chips | IC Chips | |
| Pbfree Code | Yes | ||
| Rohs Code | Yes | ||
| Part Life Cycle Code | Obsolete | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8542.32.00.28 | ||
| Access Time-Max | 0.65 ns | ||
| Clock Frequency-Max (fCLK) | 200 MHz | ||
| I/O Type | COMMON | ||
| Interleaved Burst Length | 2,4,8 | ||
| JESD-30 Code | R-PDSO-G66 | ||
| JESD-609 Code | e6 | ||
| Memory Density | 536870912 bit | ||
| Memory IC Type | DDR1 DRAM | ||
| Memory Width | 16 | ||
| Moisture Sensitivity Level | 3 | ||
| Number of Terminals | 66 | ||
| Number of Words | 33554432 words | ||
| Number of Words Code | 32000000 | ||
| Operating Temperature-Max | 70 °C | ||
| Organization | 32MX16 | ||
| Output Characteristics | 3-STATE | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Code | TSSOP | ||
| Package Equivalence Code | TSSOP66,.46 | ||
| Package Shape | RECTANGULAR | ||
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | ||
| Peak Reflow Temperature (Cel) | 260 | ||
| Power Supplies | 2.6 V | ||
| Qualification Status | Not Qualified | ||
| Refresh Cycles | 8192 | ||
| Sequential Burst Length | 2,4,8 | ||
| Standby Current-Max | 0.005 A | ||
| Supply Current-Max | 0.4 mA | ||
| Supply Voltage-Nom (Vsup) | 2.6 V | ||
| Surface Mount | YES | ||
| Technology | CMOS | ||
| Temperature Grade | COMMERCIAL | ||
| Terminal Finish | TIN BISMUTH | ||
| Terminal Form | GULL WING | ||
| Terminal Pitch | 0.635 mm | ||
| Terminal Position | DUAL |
零件號
關鍵字: K4H51
零件號 "K4H51" 回傅 20 個結果; 所有結果都匹配且頭部為 "K4H51".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| K4H510838F-LCCC |
High-speed CMOS technology |
SAMSUNG | TSOP-66 | 3~7 天 | 3,054.00 | ||
| K4H511638C-UCB3 |
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, |
SAMSUNG | TSOP-66 | 3~7 天 | 7,398.00 | ||
| K4H511638D-UCB3 |
K4H511638D-UCB3 offers efficient memory processing capabilities |
Samsung Semiconductor | TSOP-66 | 3~7 天 | 3,153.00 | ||
| K4H511638G-LCCC |
DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, |
SAMSUNG | TSSOP-66 | 3~7 天 | 4,450.00 | ||
| K4H511638D-ZCCC000 |
Advanced memory module designed for efficient data processing and storage |
Samsung Electronics | FBGA | 3~7 天 | 4,023.00 | ||
| K4H511638J-LCCC000 |
Ideal for use in industrial control systems, medical equipment, and other high-reliability environments |
Samsung Electronics | TSOP-II | 3~7 天 | 4,204.00 | ||
| K4H510838J-LCCC000 |
Fast and efficient memory solution with Mxarchitectu |
Samsung Electronics | TSOP-II | 3~7 天 | 4,802.00 | ||
| K4H511638D-UCB3000 |
A high-performance DRAM chip designed for demanding applications requiring fast data transfer and low power consumption |
Samsung Electronics | TSOP-II | 3~7 天 | 2,714.00 | ||
| K4H510383C-UCB3 |
|
SAMSUNG | 3~7 天 | 2,476.00 | |||
| K4H510438 |
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SAMSUNG | TSSOP66 | 3~7 天 | 108.00 | ||
| K4H510438B-GCB3 |
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SAMSUNG | 60FBGA | 3~7 天 | 7,000.00 | ||
| K4H510438B-GCCC |
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SAMSUNG | BGA | 3~7 天 | 7,000.00 | ||
| K4H510438B/C-UCB0 |
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SAMSUNG | 3~7 天 | 4,510.00 | |||
| K4H510438B/C-UCB3 |
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SAMSUNG | 3~7 天 | 3,474.00 | |||
| K4H510438B-TCA2 |
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SAMSUNG | TSOP | 3~7 天 | 1,000.00 | ||
| K4H510438B-TCB0 |
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SAMSUNG | TSOP | 3~7 天 | 8.00 | ||
| K4H510438B-TCB3 |
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SAMSUNG | TSSOP-56 | 3~7 天 | 14.00 | ||
| K4H510438B-UCB0 |
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SAMSUNG | TSOP | 3~7 天 | 16,000.00 | ||
| K4H510438B-UCB3 |
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SAMSUNG | TSOP | 3~7 天 | 16,000.00 | ||
| K4H510438C-UCA2 |
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SAMSUNG | TSOP | 3~7 天 | 857.00 |