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產品對比: K4B4G1646D-BHMA vs K4B4G1646D-BCMA vs K4B4G1646E-BCK0
隱藏相同的屬性
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零件號
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| Manufacturer | SAMSUNG | Samsung Electro-Mechanics | Samsung Artik |
| Package | BGA | FBGA | FBGA |
| Description | DDR DRAM module with a capacity of 256 megabytes, using a 16-bit data bus | High-performance computing relies on this modul | DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA |
| Stock | 4478 | 3892 | 5832 |
| Organization | 256MX16 | 256Mx16 | |
| Rohs Code | Yes | ||
| Part Life Cycle Code | Active | ||
| Reach Compliance Code | compliant | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8542.32.00.36 | ||
| Access Mode | MULTI BANK PAGE BURST | ||
| Additional Feature | AUTO/SELF REFRESH | ||
| JESD-30 Code | R-PBGA-B96 | ||
| Length | 13.3 mm | ||
| Memory Density | 4294967296 bit | ||
| Memory IC Type | DDR3 DRAM | ||
| Memory Width | 16 | ||
| Number of Functions | 1 | ||
| Number of Ports | 1 | ||
| Number of Terminals | 96 | ||
| Number of Words | 268435456 words | ||
| Number of Words Code | 256000000 | ||
| Operating Mode | SYNCHRONOUS | ||
| Package Body Material | PLASTIC/EPOXY | ||
| Package Code | TFBGA | ||
| Package Shape | RECTANGULAR | ||
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | ||
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | ||
| Seated Height-Max | 1.2 mm | ||
| Self Refresh | YES | ||
| Supply Voltage-Max (Vsup) | 1.575 V | ||
| Supply Voltage-Min (Vsup) | 1.425 V | ||
| Supply Voltage-Nom (Vsup) | 1.5 V | ||
| Surface Mount | YES | ||
| Technology | CMOS | ||
| Terminal Form | BALL | ||
| Terminal Pitch | 0.8 mm | ||
| Terminal Position | BOTTOM | ||
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | ||
| Width | 7.5 mm | ||
| Product Category | IC Chips | ||
| ECCN (US) | EAR99 | ||
| Part Status | LTB | ||
| HTS | 8542.32.00.36 | ||
| Automotive | No | ||
| PPAP | No | ||
| DRAM Type | DDR3 SDRAM | ||
| Chip Density (bit) | 4G | ||
| Number of Internal Banks | 8 | ||
| Number of Words per Bank | 32M | ||
| Number of Bits/Word (bit) | 16 | ||
| Data Bus Width (bit) | 16 | ||
| Maximum Clock Rate (MHz) | 1600 | ||
| Maximum Access Time (ns) | 0.225 | ||
| Address Bus Width (bit) | 18 | ||
| Interface Type | SSTL_1.5 | ||
| Minimum Operating Supply Voltage (V) | 1.425 | ||
| Maximum Operating Supply Voltage (V) | 1.575 | ||
| Operating Current (mA) | 115 | ||
| Minimum Operating Temperature (°C) | 0 | ||
| Maximum Operating Temperature (°C) | 95 | ||
| Number of I/O Lines (bit) | 16 | ||
| Mounting | Surface Mount | ||
| Package Width | 7.5 | ||
| Package Length | 13.3 | ||
| PCB changed | 96 | ||
| Standard Package Name | BGA | ||
| Supplier Package | FBGA | ||
| Pin Count | 96 | ||
| Lead Shape | Ball |
零件號
關鍵字: K4B4G
零件號 "K4B4G" 回傅 20 個結果; 所有結果都匹配且頭部為 "K4B4G".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| K4B4G1646D-BCK0 |
DRAM Chip DDR3 SDRAM 4Gbit |
Samsung Electronics | FBGA | 3~7 天 | 6,207.00 | ||
| K4B4G1646D-BYK0 |
Key Features: The K4B4G1646D-BYK0 is a high-density memory chip, offering 4Gbit of storage in a compact 96-Pin FBGA form factor |
Olimex Ltd | FBGA | Obsolete | 3~7 天 | 6,798.00 | |
| K4B4G0846D-BYK0 |
High-density memory chip |
SAMSUNG | FBGA96 | 3~7 天 | 3,968.00 | ||
| K4B4G0846B-HYK0 |
Low-voltage 1.35V technology |
SAMSUNG | FBGA | 3~7 天 | 7,622.00 | ||
| K4B4G1646E-BMMA |
Small outline, high-performance RAM module |
Samsung | FBGA96 | 3~7 天 | 7,033.00 | ||
| K4B4G0846E-BYMA |
High Density Memory Module with 4Gbit Capacity and 1.35V/1.5V Voltage Support |
Samsung Artik | FBGA | 3~7 天 | 7,456.00 | ||
| K4B4G0846E-BYK0 |
Cutting-edge DDR3L DRAM chip, offering a 512MX8 configuration in a compact PBGA78 package, ideal for various memory-intensive applications |
Samsung Artik | FBGA | 3~7 天 | 5,512.00 | ||
| K4B4G0846A-HCH9 |
Samsung FBGA96 |
SAMSUNG | FBGA96 | 3~7 天 | 7,960.00 | ||
| K4B4G1646E-BYK000 |
High-performance parallel memory for demanding applications |
Samsung Electro-Mechanics | TFBGA-96 | 3~7 天 | 6,788.00 | ||
| K4B4G1646B-HCK0 |
Environmentally friendly 96FBGA package |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 9,243.00 | |
| K4B4G1646E-BYMA |
Reliable and efficient memory chip designed for industrial application |
Samsung Artik | BGA | 3~7 天 | 6,093.00 | ||
| K4B4G1646D-BCK0000 |
Unmatched speed and capacity for demanding application |
Samsung Electronics | FBGA | 3~7 天 | 3,360.00 | ||
| K4B4G1646E-BMMA0CV |
High-performance DRAM chip for demanding applications requiring massive memory capacity and low power consumptio |
Samsung Electronics | FBGA | ACTIVE | 3~7 天 | 6,578.00 | |
| K4B4G1646E-BYMATCV |
Fast memory chips |
Samsung Electronics | FBGA | ACTIVE | 3~7 天 | 9,666.00 | |
| K4B4G1646D-BYMA000 |
Enhanced data transfer and processing capabilities |
Samsung Electronics | FBGA | 3~7 天 | 5,897.00 | ||
| K4B4G1646E-BMMA000 |
Compact 96-pin FBGA package for space-saving design |
Samsung Electronics | FBGA | 3~7 天 | 5,027.00 | ||
| K4B4G1646E-BCNB0CV |
**Memory Expansion**: This product is a DRAM module designed for memory expansion and upgrade purposes |
Samsung Electronics | FBGA | 3~7 天 | 3,507.00 | ||
| K4B4G0846E-BYMA000 |
Optimized for high-performance computing and virtualization |
Samsung Electronics | FBGA | 3~7 天 | 5,892.00 | ||
| K4B4G1646D-BCK0T00 |
Unleash powerful processing with this DDR3 SDRAM chip |
Samsung Electronics | FBGA | 3~7 天 | 2,434.00 | ||
| K4B4G1646B-HCMA |
DRAM Chip DDR3 SDRAM 4Gbit |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 5,885.00 |