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產品對比: JANTX1N753A-1 vs JANTX1N6072A vs JANTX1N965B-1
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零件號
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| Manufacturer | MICROSEMI | Microchip Technology | Microchip Technology |
| Package | DO-4 | DO13-2 | DO35-2 |
| Description | 500mW 6.2V 2-Pin DO-35 Silicon Zener Diode | ESD Suppressors / TVS Diodes 328V 4.6A Bi-Directional TVS THT | Zener Diodes Voltage Regulator |
| Stock | 3639 | 6358 | 5109 |
| Product Category | Zener Diodes | ESD Suppressors / TVS Diodes | Zener Diodes |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | Zener Diodes | TVS Diodes | Zener Diodes |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Diodes & Rectifiers | TVS Diodes / ESD Suppression Diodes | Diodes & Rectifiers |
| Unit Weight | 0.005291 oz | 0.096474 oz | 0.005291 oz |
| Package / Case | DO-204AH, DO-35, Axial | DO-35-2 | |
| RoHS | N | N | |
| Mounting Style | Through Hole | Through Hole | |
| Vz - Zener Voltage | 6.2 V | 15 V | |
| Voltage Tolerance | 5 % | 5 % | |
| Pd - Power Dissipation | 500 mW | 500 mW | |
| Zener Current | 65 mA | 26 mA | |
| Zz - Zener Impedance | 3 Ohms | 16 Ohms | |
| Minimum Operating Temperature | - 65 C | - 65 C | |
| Maximum Operating Temperature | + 175 C | + 175 C | |
| Configuration | Single | Single | |
| Test Current | 20 mA | 8.5 mA | |
| Diameter | 2.29 mm | 2.29 mm | |
| Ir - Maximum Reverse Leakage Current | 5 uA | 500 nA | |
| Ir - Reverse Current | 5 uA | 500 nA | |
| Length | 5.08 mm | 5.08 mm | |
| Vf - Forward Voltage | 1.1 V | 1.1 V | |
| Voltage Temperature Coefficient | 0.045 %/C | 0.082 %/C | |
| Category | Discrete Semiconductor ProductsDiodesZenerSingle Zener Diodes | ||
| Mfr | Microchip Technology | ||
| Series | Military, MIL-PRF-19500/127 | ||
| Product Status | Active | ||
| Voltage - Zener (Nom) (Vz) | 6.2 V | ||
| Tolerance | ±5% | ||
| Power - Max | 500 mW | ||
| Impedance (Max) (Zzt) | 3 Ohms | ||
| Current - Reverse Leakage @ Vr | 5 µA @ 3.5 V | ||
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 200 mA | ||
| Operating Temperature | -65°C ~ 175°C | ||
| Mounting Type | Through Hole | ||
| Supplier Device Package | DO-35 (DO-204AH) | ||
| Base Product Number | 1N753 | ||
| Height | - | ||
| Voltage Regulation Accuracy | - | ||
| Width | - | ||
| Termination Style | Axial |
零件號
關鍵字: JANTX
零件號 "JANTX" 回傅 22 個結果; 所有結果都匹配且頭部為 "JANTX".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| JANTX1N6060A |
TVS Diode Single Bi-Dir 64V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 6,312.00 | |
| JANTX2N2219A |
reliability components |
Onsemi | TO-5-3 | 3~7 天 | 4,847.00 | ||
| JANTX1N5420 |
Rectifier Diode JANTX1N5420 - 600 Volt, SOD-61H2 |
MICROSEMI | SOD-64 | 3~7 天 | 5,130.00 | ||
| JANTX1N1206A |
Rectifier Unit: JANTX1N1206A offers precision rectification, guaranteeing stable DC output for various electronic applications |
MICROSEMI | DO-4 | Active | 3~7 天 | 5,035.00 | |
| JANTX2N6849 |
TO-205AF Package: JANTX2N6849 -100V Single P-Channel Hi-Rel MOSFET with Hermetic Seal for Optimal Reliability |
MICROSEMI | TO-39 | 3~7 天 | 7,106.00 | ||
| JANTX1N6391 |
Schottky diodes and rectifiers engineered for power delivery up to 45 volts (V), with stud-mounting configuration |
Microchip Technology | DO203AA-2 | Active | 3~7 天 | 7,084.00 | |
| JANTX1N5816 |
150V 20A Rectifier Diode Switching 35ns 2-Pin DO-4 |
MICROSEMI | DO-4 | 3~7 天 | 4,976.00 | ||
| JANTX1N5819UR-1 |
Schottky Diode with a voltage rating of 45V and current capacity of 1A, packaged in a 2-Pin DO-213AB Bag |
Microchip | DO-213AB-2 | Discontinued | 3~7 天 | 3,341.00 | |
| JANTX1N6306 |
DO-203AB-packaged hermetic rectifier capable of handling 150 volts and 1 amp, boasting a rapid switching time of 50 nanoseconds |
Microchip Technology | DO5-2 | Active | 3~7 天 | 7,413.00 | |
| JANTXV2N2907AUB |
Small signal PNP silicon transistor with 0.6A collector current and 60V breakdown voltage |
Aeroflex | SMD-4 | Active | 3~7 天 | 5,964.00 | |
| JANTX1N5417 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN |
MICROSEMI | DO-41 | 3~7 天 | 3,445.00 | ||
| JANTX2N5664 |
Bipolar Junction NPN Transistor, TO-66 Package |
Microchip | TO-66 | Active | 3~7 天 | 5,396.00 | |
| JANTX2N2484 |
Bipolar Transistors - BJT BJTs |
Microchip Technology | TO-18 | Active | 3~7 天 | 9,683.00 | |
| JANTX1N6036A |
ESD Suppressors / TVS Diodes 11.3V 132A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | ACTIVE | 3~7 天 | 7,057.00 | |
| JANTX1N6053A |
ESD Suppressors / TVS Diodes 53.9V 28A Bi-Directional TVS THT |
microchip | DO-13 | Active | 3~7 天 | 5,722.00 | |
| JANTX1N6054A |
TVS Diode Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 5,614.00 | |
| JANTX2N6796 |
Power Field-Effect Transistor |
Infineon | TO-205AF-3 | OBSOLETE | 3~7 天 | 7,656.00 | |
| JANTX4N49A |
Hi-Rel Opto Isolator with Base Output |
Tt Electronics / Bi Technologies | TO78-6 | ACTIVE | 3~7 天 | 5,311.00 | |
| JANTX2N2907A |
JANTX2N2907A serves as a Small-Signal Bipolar Junction Transistor (BJT), engineered to meet the demands of intricate electronic systems |
Microchip | TO-18-3 | ACTIVE | 3~7 天 | 8,446.00 | |
| JANTX1N5811 |
High-performance diode JANTX1N5811: This diode offers superior performance, making it a reliable choice for demanding electronic circuits |
MICROSEMI | DO-13 | Active | 3~7 天 | 5,180.00 | |
| JANTX1N5811US |
Rectifier Diode, 150V, DO-213AB |
MICROSEMI | B, SQ-MELF | 3~7 天 | 3,602.00 | ||
| JANTX1N4462 |
500mW power rating, 5% tolerance, 2-pin configuration |
MICROSEMI | DO-204AL, DO-41, | Active | 3~7 天 | 6,564.00 |