產品對比: JANTX1N6072A vs JANTX1N965B-1 vs JANTX1N6060A
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零件號
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Manufacturer | Microchip Technology | Microchip Technology | MICROSEMI |
Package | DO13-2 | DO35-2 | DO-13 |
Description | ESD Suppressors / TVS Diodes 328V 4.6A Bi-Directional TVS THT | Zener Diodes Voltage Regulator | TVS Diode Single Bi-Dir 64V 1.5KW 2-Pin DO-13 |
Stock | 6358 | 5109 | 6312 |
Product Category | ESD Suppressors / TVS Diodes | Zener Diodes | |
Product Type | TVS Diodes | Zener Diodes | |
Brand | Microchip / Microsemi | Microchip / Microsemi | |
Factory Pack Quantity | 1 | 1 | |
Subcategory | TVS Diodes / ESD Suppression Diodes | Diodes & Rectifiers | |
Unit Weight | 0.096474 oz | 0.005291 oz | |
Package / Case | DO-35-2 | DO-202AA, DO-13, Axial | |
Configuration | Single | SINGLE | |
Termination Style | Axial | ||
RoHS | N | ||
Mounting Style | Through Hole | ||
Vz - Zener Voltage | 15 V | ||
Voltage Tolerance | 5 % | ||
Pd - Power Dissipation | 500 mW | ||
Zener Current | 26 mA | ||
Zz - Zener Impedance | 16 Ohms | ||
Minimum Operating Temperature | - 65 C | ||
Maximum Operating Temperature | + 175 C | ||
Test Current | 8.5 mA | ||
Diameter | 2.29 mm | ||
Ir - Maximum Reverse Leakage Current | 500 nA | ||
Ir - Reverse Current | 500 nA | ||
Length | 5.08 mm | ||
Vf - Forward Voltage | 1.1 V | ||
Voltage Temperature Coefficient | 0.082 %/C | ||
Part Life Cycle Code | Active | ||
Reach Compliance Code | compliant | ||
ECCN Code | EAR99 | ||
HTS Code | 8541.10.00.50 | ||
Date Of Intro | 2017-11-03 | ||
Additional Feature | HIGH RELIABILITY | ||
Breakdown Voltage-Min | 71.3 V | ||
Case Connection | ISOLATED | ||
Diode Element Material | SILICON | ||
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | ||
JEDEC-95 Code | DO-13 | ||
JESD-30 Code | O-XALF-W2 | ||
Number of Elements | 1 | ||
Number of Terminals | 2 | ||
Operating Temperature-Max | 155 °C | ||
Operating Temperature-Min | -65 °C | ||
Package Body Material | UNSPECIFIED | ||
Package Shape | ROUND | ||
Package Style | LONG FORM | ||
Polarity | BIDIRECTIONAL | ||
Qualification Status | Qualified | ||
Reference Standard | MIL-19500 | ||
Rep Pk Reverse Voltage-Max | 64 V | ||
Surface Mount | NO | ||
Technology | AVALANCHE | ||
Terminal Form | WIRE | ||
Terminal Position | AXIAL | ||
Product Status | Active | ||
Type | Zener | ||
Bidirectional Channels | 1 | ||
Voltage - Reverse Standoff (Typ) | 64V | ||
Voltage - Breakdown (Min) | 71.3V | ||
Voltage - Clamping (Max) @ Ipp | 103V | ||
Current - Peak Pulse (10/1000µs) | 14.6A | ||
Power - Peak Pulse | 1500W (1.5kW) | ||
Power Line Protection | No | ||
Applications | General Purpose | ||
Operating Temperature | -55°C ~ 175°C (TJ) | ||
Grade | Military | ||
Qualification | MIL-PRF-19500/507 | ||
Mounting Type | Through Hole | ||
Supplier Device Package | DO-13 (DO-202AA) | ||
Base Product Number | 1N6060 |
零件號
關鍵字: JANTX
零件號 "JANTX" 回傅 21 個結果; 所有結果都匹配且頭部為 "JANTX".
零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|---|
JANTX2N2219A |
reliability components |
Onsemi | TO-5-3 | 3~7 天 | 4,847.00 | ||
JANTX1N5420 |
Rectifier Diode JANTX1N5420 - 600 Volt, SOD-61H2 |
MICROSEMI | SOD-64 | 3~7 天 | 5,130.00 | ||
JANTX1N1206A |
Rectifier Unit: JANTX1N1206A offers precision rectification, guaranteeing stable DC output for various electronic applications |
MICROSEMI | DO-4 | Active | 3~7 天 | 5,035.00 | |
JANTX2N6849 |
TO-205AF Package: JANTX2N6849 -100V Single P-Channel Hi-Rel MOSFET with Hermetic Seal for Optimal Reliability |
MICROSEMI | TO-39 | 3~7 天 | 7,106.00 | ||
JANTX1N6391 |
Schottky diodes and rectifiers engineered for power delivery up to 45 volts (V), with stud-mounting configuration |
Microchip Technology | DO203AA-2 | Active | 3~7 天 | 7,084.00 | |
JANTX1N5816 |
150V 20A Rectifier Diode Switching 35ns 2-Pin DO-4 |
MICROSEMI | DO-4 | 3~7 天 | 4,976.00 | ||
JANTX1N5819UR-1 |
Schottky Diode with a voltage rating of 45V and current capacity of 1A, packaged in a 2-Pin DO-213AB Bag |
Microchip | DO-213AB-2 | Discontinued | 3~7 天 | 3,341.00 | |
JANTX1N6306 |
DO-203AB-packaged hermetic rectifier capable of handling 150 volts and 1 amp, boasting a rapid switching time of 50 nanoseconds |
Microchip Technology | DO5-2 | Active | 3~7 天 | 7,413.00 | |
JANTXV2N2907AUB |
Small signal PNP silicon transistor with 0.6A collector current and 60V breakdown voltage |
Aeroflex | SMD-4 | Active | 3~7 天 | 5,964.00 | |
JANTX1N5417 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN |
MICROSEMI | DO-41 | 3~7 天 | 3,445.00 | ||
JANTX2N5664 |
Bipolar Junction NPN Transistor, TO-66 Package |
Microchip | TO-66 | Active | 3~7 天 | 5,396.00 | |
JANTX2N2484 |
Bipolar Transistors - BJT BJTs |
Microchip Technology | TO-18 | Active | 3~7 天 | 9,683.00 | |
JANTX1N6036A |
ESD Suppressors / TVS Diodes 11.3V 132A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | ACTIVE | 3~7 天 | 7,057.00 | |
JANTX1N6053A |
ESD Suppressors / TVS Diodes 53.9V 28A Bi-Directional TVS THT |
microchip | DO-13 | Active | 3~7 天 | 5,722.00 | |
JANTX1N6054A |
TVS Diode Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 5,614.00 | |
JANTX2N6796 |
Power Field-Effect Transistor |
Infineon | TO-205AF-3 | OBSOLETE | 3~7 天 | 7,656.00 | |
JANTX4N49A |
Hi-Rel Opto Isolator with Base Output |
Tt Electronics / Bi Technologies | TO78-6 | ACTIVE | 3~7 天 | 5,311.00 | |
JANTX2N2907A |
JANTX2N2907A serves as a Small-Signal Bipolar Junction Transistor (BJT), engineered to meet the demands of intricate electronic systems |
Microchip | TO-18-3 | ACTIVE | 3~7 天 | 8,446.00 | |
JANTX1N5811 |
High-performance diode JANTX1N5811: This diode offers superior performance, making it a reliable choice for demanding electronic circuits |
MICROSEMI | DO-13 | Active | 3~7 天 | 5,180.00 | |
JANTX1N5811US |
Rectifier Diode, 150V, DO-213AB |
MICROSEMI | B, SQ-MELF | 3~7 天 | 3,602.00 | ||
JANTX1N4462 |
500mW power rating, 5% tolerance, 2-pin configuration |
MICROSEMI | DO-204AL, DO-41, | Active | 3~7 天 | 6,564.00 |