恭喜您提交成功
提交失敗
產品對比: JANTX1N6053A vs JANTX1N5420 vs JANTX1N5553
隱藏相同的屬性
|
全部
零件號
|
|
|
|
|---|---|---|---|
| Manufacturer | microchip | MICROSEMI | SEMTECH |
| Package | DO-13 | SOD-64 | DO-41 |
| Description | ESD Suppressors / TVS Diodes 53.9V 28A Bi-Directional TVS THT | Rectifier Diode JANTX1N5420 - 600 Volt, SOD-61H2 | Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, AXIAL PACKAGE-2 |
| Stock | 5722 | 5130 | 4387 |
| Rohs Code | No | No | |
| Part Life Cycle Code | Active | Active | |
| Part Package Code | DO-35 | AXIAL DIODE | |
| Pin Count | 2 | 2 | |
| Reach Compliance Code | compliant | compliant | |
| ECCN Code | EAR99 | EAR99 | |
| HTS Code | 8541.10.00.80 | 8541.10.00.80 | |
| Application | GENERAL PURPOSE | GENERAL PURPOSE | |
| Case Connection | ISOLATED | ISOLATED | |
| Configuration | SINGLE | SINGLE | |
| Diode Element Material | SILICON | SILICON | |
| Diode Type | RECTIFIER DIODE | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1.1 V | 1.3 V | |
| JESD-30 Code | E-XALF-W2 | O-XALF-W2 | |
| JESD-609 Code | e0 | e0 | |
| Non-rep Pk Forward Current-Max | 80 A | 150 A | |
| Number of Elements | 1 | 1 | |
| Number of Phases | 1 | 1 | |
| Number of Terminals | 2 | 2 | |
| Operating Temperature-Max | 175 °C | 175 °C | |
| Output Current-Max | 3 A | 3 A | |
| Package Body Material | UNSPECIFIED | UNSPECIFIED | |
| Package Shape | ELLIPTICAL | ROUND | |
| Package Style | LONG FORM | LONG FORM | |
| Qualification Status | Qualified | Qualified | |
| Reference Standard | MIL-19500 | MIL | |
| Rep Pk Reverse Voltage-Max | 600 V | 800 V | |
| Reverse Recovery Time-Max | 0.4 µs | 2 µs | |
| Surface Mount | NO | NO | |
| Terminal Finish | TIN LEAD | TIN LEAD | |
| Terminal Form | WIRE | WIRE | |
| Terminal Position | AXIAL | AXIAL | |
| Product Category | ESD Suppressors / TVS Diodes | ||
| RoHS | N | ||
| Polarity | Bidirectional | ||
| Number of Channels | 1 Channel | ||
| Working Voltage | 33 V | ||
| Termination Style | Axial | ||
| Clamping Voltage | 53.9 V | ||
| Breakdown Voltage | 37.1 V | ||
| Package / Case | DO-13-2 | ||
| Ipp - Peak Pulse Current | 28 A | ||
| Pppm - Peak Pulse Power Dissipation | 1.5 kW | ||
| Product Type | TVS Diodes | ||
| Minimum Operating Temperature | - 55 C | ||
| Maximum Operating Temperature | + 175 C | ||
| Brand | Microchip / Microsemi | ||
| Factory Pack Quantity | 1 | ||
| Subcategory | TVS Diodes / ESD Suppression Diodes | ||
| Unit Weight | 0.052911 oz | ||
| Pbfree Code | No | ||
| Additional Feature | METALLURGICALLY BONDED | ||
| JEDEC-95 Code | DO-35 | ||
| Operating Temperature-Min | -65 °C |
零件號
關鍵字: JANTX
零件號 "JANTX" 回傅 21 個結果; 所有結果都匹配且頭部為 "JANTX".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| JANTX1N6060A |
TVS Diode Single Bi-Dir 64V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 6,312.00 | |
| JANTX1N6072A |
ESD Suppressors / TVS Diodes 328V 4.6A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | Active | 3~7 天 | 6,358.00 | |
| JANTX2N2219A |
reliability components |
Onsemi | TO-5-3 | 3~7 天 | 4,847.00 | ||
| JANTX1N1206A |
Rectifier Unit: JANTX1N1206A offers precision rectification, guaranteeing stable DC output for various electronic applications |
MICROSEMI | DO-4 | Active | 3~7 天 | 5,035.00 | |
| JANTX2N6849 |
TO-205AF Package: JANTX2N6849 -100V Single P-Channel Hi-Rel MOSFET with Hermetic Seal for Optimal Reliability |
MICROSEMI | TO-39 | 3~7 天 | 7,106.00 | ||
| JANTX1N6391 |
Schottky diodes and rectifiers engineered for power delivery up to 45 volts (V), with stud-mounting configuration |
Microchip Technology | DO203AA-2 | Active | 3~7 天 | 7,084.00 | |
| JANTX1N5816 |
150V 20A Rectifier Diode Switching 35ns 2-Pin DO-4 |
MICROSEMI | DO-4 | 3~7 天 | 4,976.00 | ||
| JANTX1N5819UR-1 |
Schottky Diode with a voltage rating of 45V and current capacity of 1A, packaged in a 2-Pin DO-213AB Bag |
Microchip | DO-213AB-2 | Discontinued | 3~7 天 | 3,341.00 | |
| JANTX1N6306 |
DO-203AB-packaged hermetic rectifier capable of handling 150 volts and 1 amp, boasting a rapid switching time of 50 nanoseconds |
Microchip Technology | DO5-2 | Active | 3~7 天 | 7,413.00 | |
| JANTXV2N2907AUB |
Small signal PNP silicon transistor with 0.6A collector current and 60V breakdown voltage |
Aeroflex | SMD-4 | Active | 3~7 天 | 5,964.00 | |
| JANTX1N5417 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN |
MICROSEMI | DO-41 | 3~7 天 | 3,445.00 | ||
| JANTX2N5664 |
Bipolar Junction NPN Transistor, TO-66 Package |
Microchip | TO-66 | Active | 3~7 天 | 5,396.00 | |
| JANTX2N2484 |
Bipolar Transistors - BJT BJTs |
Microchip Technology | TO-18 | Active | 3~7 天 | 9,683.00 | |
| JANTX1N6036A |
ESD Suppressors / TVS Diodes 11.3V 132A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | ACTIVE | 3~7 天 | 7,057.00 | |
| JANTX1N6054A |
TVS Diode Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 5,614.00 | |
| JANTX2N6796 |
Power Field-Effect Transistor |
Infineon | TO-205AF-3 | OBSOLETE | 3~7 天 | 7,656.00 | |
| JANTX4N49A |
Hi-Rel Opto Isolator with Base Output |
Tt Electronics / Bi Technologies | TO78-6 | ACTIVE | 3~7 天 | 5,311.00 | |
| JANTX2N2907A |
JANTX2N2907A serves as a Small-Signal Bipolar Junction Transistor (BJT), engineered to meet the demands of intricate electronic systems |
Microchip | TO-18-3 | ACTIVE | 3~7 天 | 8,446.00 | |
| JANTX1N5811 |
High-performance diode JANTX1N5811: This diode offers superior performance, making it a reliable choice for demanding electronic circuits |
MICROSEMI | DO-13 | Active | 3~7 天 | 5,180.00 | |
| JANTX1N5811US |
Rectifier Diode, 150V, DO-213AB |
MICROSEMI | B, SQ-MELF | 3~7 天 | 3,602.00 | ||
| JANTX1N4462 |
500mW power rating, 5% tolerance, 2-pin configuration |
MICROSEMI | DO-204AL, DO-41, | Active | 3~7 天 | 6,564.00 |