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產品對比: JANTX1N5809 vs JANTX1N5816 vs JANTX1N5711UR-1
隱藏相同的屬性
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零件號
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| Manufacturer | MICROSEMI | MICROSEMI | MICROSEMI |
| Package | Axial | DO-4 | DO-213AA |
| Description | DIODE GEN PURP 100V 3A AXIAL | 150V 20A Rectifier Diode Switching 35ns 2-Pin DO-4 | Schottky diodes for small-signal applications |
| Stock | 3801 | 4976 | 5768 |
| Category | Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes | Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes | |
| Mfr | Microchip Technology | Microchip Technology | |
| Series | Military, MIL-PRF-19500/477 | Military, MIL-PRF-19500/444 | |
| Product Status | Active | Active | |
| Technology | Standard | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 70 V | |
| Current - Average Rectified (Io) | 3A | 33mA | |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A | 1 V @ 15 mA | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed | |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V | 200 nA @ 100 V | |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz | 2pF @ 0V, 1MHz | |
| Mounting Type | Through Hole | Surface Mount | |
| Package / Case | B, Axial | DO-213AA | |
| Supplier Device Package | B, Axial | DO-213AA | |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 150°C | |
| Base Product Number | 1N5809 | 1N5711 | |
| Reverse Recovery Time (trr) | 30 ns | ||
| Part Life Cycle Code | Active | ||
| Reach Compliance Code | compliant | ||
| ECCN Code | EAR99 | ||
| HTS Code | 8541.10.00.80 | ||
| Application | ULTRA FAST RECOVERY | ||
| Case Connection | CATHODE | ||
| Configuration | SINGLE | ||
| Diode Element Material | SILICON | ||
| Diode Type | RECTIFIER DIODE | ||
| JEDEC-95 Code | DO-4 | ||
| JESD-30 Code | O-MUPM-D1 | ||
| Non-rep Pk Forward Current-Max | 400 A | ||
| Number of Elements | 1 | ||
| Number of Phases | 1 | ||
| Number of Terminals | 1 | ||
| Output Current-Max | 20 A | ||
| Package Body Material | METAL | ||
| Package Shape | ROUND | ||
| Package Style | POST/STUD MOUNT | ||
| Qualification Status | Qualified | ||
| Reference Standard | MIL-19500 | ||
| Rep Pk Reverse Voltage-Max | 150 V | ||
| Reverse Recovery Time-Max | 0.035 µs | ||
| Surface Mount | NO | ||
| Terminal Form | SOLDER LUG | ||
| Terminal Position | UPPER |
零件號
關鍵字: JANTX
零件號 "JANTX" 回傅 22 個結果; 所有結果都匹配且頭部為 "JANTX".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| JANTX1N6060A |
TVS Diode Single Bi-Dir 64V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 6,312.00 | |
| JANTX1N6072A |
ESD Suppressors / TVS Diodes 328V 4.6A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | Active | 3~7 天 | 6,358.00 | |
| JANTX2N2219A |
reliability components |
Onsemi | TO-5-3 | 3~7 天 | 4,847.00 | ||
| JANTX1N5420 |
Rectifier Diode JANTX1N5420 - 600 Volt, SOD-61H2 |
MICROSEMI | SOD-64 | 3~7 天 | 5,130.00 | ||
| JANTX1N1206A |
Rectifier Unit: JANTX1N1206A offers precision rectification, guaranteeing stable DC output for various electronic applications |
MICROSEMI | DO-4 | Active | 3~7 天 | 5,035.00 | |
| JANTX2N6849 |
TO-205AF Package: JANTX2N6849 -100V Single P-Channel Hi-Rel MOSFET with Hermetic Seal for Optimal Reliability |
MICROSEMI | TO-39 | 3~7 天 | 7,106.00 | ||
| JANTX1N6391 |
Schottky diodes and rectifiers engineered for power delivery up to 45 volts (V), with stud-mounting configuration |
Microchip Technology | DO203AA-2 | Active | 3~7 天 | 7,084.00 | |
| JANTX1N5819UR-1 |
Schottky Diode with a voltage rating of 45V and current capacity of 1A, packaged in a 2-Pin DO-213AB Bag |
Microchip | DO-213AB-2 | Discontinued | 3~7 天 | 3,341.00 | |
| JANTX1N6306 |
DO-203AB-packaged hermetic rectifier capable of handling 150 volts and 1 amp, boasting a rapid switching time of 50 nanoseconds |
Microchip Technology | DO5-2 | Active | 3~7 天 | 7,413.00 | |
| JANTXV2N2907AUB |
Small signal PNP silicon transistor with 0.6A collector current and 60V breakdown voltage |
Aeroflex | SMD-4 | Active | 3~7 天 | 5,964.00 | |
| JANTX1N5417 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN |
MICROSEMI | DO-41 | 3~7 天 | 3,445.00 | ||
| JANTX2N5664 |
Bipolar Junction NPN Transistor, TO-66 Package |
Microchip | TO-66 | Active | 3~7 天 | 5,396.00 | |
| JANTX2N2484 |
Bipolar Transistors - BJT BJTs |
Microchip Technology | TO-18 | Active | 3~7 天 | 9,683.00 | |
| JANTX1N6036A |
ESD Suppressors / TVS Diodes 11.3V 132A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | ACTIVE | 3~7 天 | 7,057.00 | |
| JANTX1N6053A |
ESD Suppressors / TVS Diodes 53.9V 28A Bi-Directional TVS THT |
microchip | DO-13 | Active | 3~7 天 | 5,722.00 | |
| JANTX1N6054A |
TVS Diode Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 5,614.00 | |
| JANTX2N6796 |
Power Field-Effect Transistor |
Infineon | TO-205AF-3 | OBSOLETE | 3~7 天 | 7,656.00 | |
| JANTX4N49A |
Hi-Rel Opto Isolator with Base Output |
Tt Electronics / Bi Technologies | TO78-6 | ACTIVE | 3~7 天 | 5,311.00 | |
| JANTX2N2907A |
JANTX2N2907A serves as a Small-Signal Bipolar Junction Transistor (BJT), engineered to meet the demands of intricate electronic systems |
Microchip | TO-18-3 | ACTIVE | 3~7 天 | 8,446.00 | |
| JANTX1N5811 |
High-performance diode JANTX1N5811: This diode offers superior performance, making it a reliable choice for demanding electronic circuits |
MICROSEMI | DO-13 | Active | 3~7 天 | 5,180.00 | |
| JANTX1N5811US |
Rectifier Diode, 150V, DO-213AB |
MICROSEMI | B, SQ-MELF | 3~7 天 | 3,602.00 | ||
| JANTX1N4462 |
500mW power rating, 5% tolerance, 2-pin configuration |
MICROSEMI | DO-204AL, DO-41, | Active | 3~7 天 | 6,564.00 |