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產品對比: JANTX1N5417 vs JANTX1N5806 vs JANTX1N647-1
隱藏相同的屬性
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零件號
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| Manufacturer | MICROSEMI | MICROSEMI | MICROSEMI |
| Package | DO-41 | DO13 | DO-35 |
| Description | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | Minimally-sized, maximum-protection TVS diodes for hermetically sealed system |
| Stock | 3445 | 5084 | 7061 |
| Pbfree Code | No | No | |
| Rohs Code | No | No | |
| Part Life Cycle Code | Active | Active | |
| Pin Count | 2 | 2 | |
| Reach Compliance Code | compliant | compliant | |
| ECCN Code | EAR99 | EAR99 | |
| HTS Code | 8541.10.00.80 | 8541.10.00.80 | |
| Additional Feature | METALLURGICALLY BONDED | HIGH RELIABILITY | |
| Application | GENERAL PURPOSE | ULTRA FAST RECOVERY | |
| Case Connection | ISOLATED | ISOLATED | |
| Configuration | SINGLE | SINGLE | |
| Diode Element Material | SILICON | SILICON | |
| Diode Type | RECTIFIER DIODE | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1.1 V | 0.875 V | |
| JESD-30 Code | E-XALF-W2 | E-LALF-W2 | |
| JESD-609 Code | e0 | e0 | |
| Non-rep Pk Forward Current-Max | 80 A | 35 A | |
| Number of Elements | 1 | 1 | |
| Number of Phases | 1 | 1 | |
| Number of Terminals | 2 | 2 | |
| Operating Temperature-Max | 175 °C | 175 °C | |
| Operating Temperature-Min | -65 °C | -65 °C | |
| Output Current-Max | 3 A | 2.5 A | |
| Package Body Material | UNSPECIFIED | GLASS | |
| Package Shape | ELLIPTICAL | ELLIPTICAL | |
| Package Style | LONG FORM | LONG FORM | |
| Qualification Status | Qualified | Qualified | |
| Reference Standard | MIL-19500 | MIL-19500 | |
| Rep Pk Reverse Voltage-Max | 200 V | 150 V | |
| Reverse Recovery Time-Max | 0.15 µs | 0.025 µs | |
| Surface Mount | NO | NO | |
| Terminal Finish | TIN LEAD | TIN LEAD | |
| Terminal Form | WIRE | WIRE | |
| Terminal Position | AXIAL | AXIAL | |
| Part Package Code | DO-35 | ||
| JEDEC-95 Code | DO-35 | ||
| Date Of Intro | 1999-06-01 | ||
| Category | Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes | ||
| Mfr | Microchip Technology | ||
| Series | Military, MIL-PRF-19500/240 | ||
| Product Status | Active | ||
| Technology | Standard | ||
| Voltage - DC Reverse (Vr) (Max) | 400 V | ||
| Current - Average Rectified (Io) | 400mA | ||
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 400 mA | ||
| Speed | Standard Recovery >500ns, > 200mA (Io) | ||
| Current - Reverse Leakage @ Vr | 50 nA @ 400 V | ||
| Capacitance @ Vr, F | - | ||
| Mounting Type | Through Hole | ||
| Package / Case | DO-204AH, DO-35, Axial | ||
| Supplier Device Package | DO-35 | ||
| Operating Temperature - Junction | -65°C ~ 175°C | ||
| Base Product Number | 1N647 |
零件號
關鍵字: JANTX
零件號 "JANTX" 回傅 22 個結果; 所有結果都匹配且頭部為 "JANTX".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| JANTX1N6060A |
TVS Diode Single Bi-Dir 64V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 6,312.00 | |
| JANTX1N6072A |
ESD Suppressors / TVS Diodes 328V 4.6A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | Active | 3~7 天 | 6,358.00 | |
| JANTX2N2219A |
reliability components |
Onsemi | TO-5-3 | 3~7 天 | 4,847.00 | ||
| JANTX1N5420 |
Rectifier Diode JANTX1N5420 - 600 Volt, SOD-61H2 |
MICROSEMI | SOD-64 | 3~7 天 | 5,130.00 | ||
| JANTX1N1206A |
Rectifier Unit: JANTX1N1206A offers precision rectification, guaranteeing stable DC output for various electronic applications |
MICROSEMI | DO-4 | Active | 3~7 天 | 5,035.00 | |
| JANTX2N6849 |
TO-205AF Package: JANTX2N6849 -100V Single P-Channel Hi-Rel MOSFET with Hermetic Seal for Optimal Reliability |
MICROSEMI | TO-39 | 3~7 天 | 7,106.00 | ||
| JANTX1N6391 |
Schottky diodes and rectifiers engineered for power delivery up to 45 volts (V), with stud-mounting configuration |
Microchip Technology | DO203AA-2 | Active | 3~7 天 | 7,084.00 | |
| JANTX1N5816 |
150V 20A Rectifier Diode Switching 35ns 2-Pin DO-4 |
MICROSEMI | DO-4 | 3~7 天 | 4,976.00 | ||
| JANTX1N5819UR-1 |
Schottky Diode with a voltage rating of 45V and current capacity of 1A, packaged in a 2-Pin DO-213AB Bag |
Microchip | DO-213AB-2 | Discontinued | 3~7 天 | 3,341.00 | |
| JANTX1N6306 |
DO-203AB-packaged hermetic rectifier capable of handling 150 volts and 1 amp, boasting a rapid switching time of 50 nanoseconds |
Microchip Technology | DO5-2 | Active | 3~7 天 | 7,413.00 | |
| JANTXV2N2907AUB |
Small signal PNP silicon transistor with 0.6A collector current and 60V breakdown voltage |
Aeroflex | SMD-4 | Active | 3~7 天 | 5,964.00 | |
| JANTX2N5664 |
Bipolar Junction NPN Transistor, TO-66 Package |
Microchip | TO-66 | Active | 3~7 天 | 5,396.00 | |
| JANTX2N2484 |
Bipolar Transistors - BJT BJTs |
Microchip Technology | TO-18 | Active | 3~7 天 | 9,683.00 | |
| JANTX1N6036A |
ESD Suppressors / TVS Diodes 11.3V 132A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | ACTIVE | 3~7 天 | 7,057.00 | |
| JANTX1N6053A |
ESD Suppressors / TVS Diodes 53.9V 28A Bi-Directional TVS THT |
microchip | DO-13 | Active | 3~7 天 | 5,722.00 | |
| JANTX1N6054A |
TVS Diode Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 5,614.00 | |
| JANTX2N6796 |
Power Field-Effect Transistor |
Infineon | TO-205AF-3 | OBSOLETE | 3~7 天 | 7,656.00 | |
| JANTX4N49A |
Hi-Rel Opto Isolator with Base Output |
Tt Electronics / Bi Technologies | TO78-6 | ACTIVE | 3~7 天 | 5,311.00 | |
| JANTX2N2907A |
JANTX2N2907A serves as a Small-Signal Bipolar Junction Transistor (BJT), engineered to meet the demands of intricate electronic systems |
Microchip | TO-18-3 | ACTIVE | 3~7 天 | 8,446.00 | |
| JANTX1N5811 |
High-performance diode JANTX1N5811: This diode offers superior performance, making it a reliable choice for demanding electronic circuits |
MICROSEMI | DO-13 | Active | 3~7 天 | 5,180.00 | |
| JANTX1N5811US |
Rectifier Diode, 150V, DO-213AB |
MICROSEMI | B, SQ-MELF | 3~7 天 | 3,602.00 | ||
| JANTX1N4462 |
500mW power rating, 5% tolerance, 2-pin configuration |
MICROSEMI | DO-204AL, DO-41, | Active | 3~7 天 | 6,564.00 |