產品對比: JANTX1N4462 vs JANTX1N5417 vs JANTX1N5806
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零件號
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Manufacturer | MICROSEMI | MICROSEMI | MICROSEMI |
Package | DO-204AL, DO-41, | DO-41 | DO13 |
Description | 500mW power rating, 5% tolerance, 2-pin configuration | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 |
Stock | 6564 | 3445 | 5084 |
Pbfree Code | No | No | |
Rohs Code | No | No | |
Part Life Cycle Code | Active | Active | |
Pin Count | 2 | 2 | |
Reach Compliance Code | compliant | compliant | |
ECCN Code | EAR99 | EAR99 | |
HTS Code | 8541.10.00.80 | 8541.10.00.80 | |
Additional Feature | METALLURGICALLY BONDED | HIGH RELIABILITY | |
Application | GENERAL PURPOSE | ULTRA FAST RECOVERY | |
Case Connection | ISOLATED | ISOLATED | |
Configuration | SINGLE | SINGLE | |
Diode Element Material | SILICON | SILICON | |
Diode Type | RECTIFIER DIODE | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.1 V | 0.875 V | |
JESD-30 Code | E-XALF-W2 | E-LALF-W2 | |
JESD-609 Code | e0 | e0 | |
Non-rep Pk Forward Current-Max | 80 A | 35 A | |
Number of Elements | 1 | 1 | |
Number of Phases | 1 | 1 | |
Number of Terminals | 2 | 2 | |
Operating Temperature-Max | 175 °C | 175 °C | |
Operating Temperature-Min | -65 °C | -65 °C | |
Output Current-Max | 3 A | 2.5 A | |
Package Body Material | UNSPECIFIED | GLASS | |
Package Shape | ELLIPTICAL | ELLIPTICAL | |
Package Style | LONG FORM | LONG FORM | |
Qualification Status | Qualified | Qualified | |
Reference Standard | MIL-19500 | MIL-19500 | |
Rep Pk Reverse Voltage-Max | 200 V | 150 V | |
Reverse Recovery Time-Max | 0.15 µs | 0.025 µs | |
Surface Mount | NO | NO | |
Terminal Finish | TIN LEAD | TIN LEAD | |
Terminal Form | WIRE | WIRE | |
Terminal Position | AXIAL | AXIAL | |
Category | Discrete Semiconductor ProductsDiodesZenerSingle Zener Diodes | ||
Mfr | Microchip Technology | ||
Series | Military, MIL-PRF-19500/406 | ||
Product Status | Active | ||
Voltage - Zener (Nom) (Vz) | 7.5 V | ||
Tolerance | ±5% | ||
Power - Max | 1.5 W | ||
Impedance (Max) (Zzt) | 400 Ohms | ||
Current - Reverse Leakage @ Vr | 1 µA @ 4.5 V | ||
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 1 A | ||
Operating Temperature | -65°C ~ 175°C | ||
Mounting Type | Through Hole | ||
Package / Case | DO-204AL, DO-41, Axial | ||
Supplier Device Package | DO-204AL (DO-41) | ||
Base Product Number | 1N4462 | ||
Part Package Code | DO-35 | ||
JEDEC-95 Code | DO-35 | ||
Date Of Intro | 1999-06-01 |
零件號
關鍵字: JANTX
零件號 "JANTX" 回傅 21 個結果; 所有結果都匹配且頭部為 "JANTX".
零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|---|
JANTX1N6060A |
TVS Diode Single Bi-Dir 64V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 6,312.00 | |
JANTX1N6072A |
ESD Suppressors / TVS Diodes 328V 4.6A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | Active | 3~7 天 | 6,358.00 | |
JANTX2N2219A |
reliability components |
Onsemi | TO-5-3 | 3~7 天 | 4,847.00 | ||
JANTX1N5420 |
Rectifier Diode JANTX1N5420 - 600 Volt, SOD-61H2 |
MICROSEMI | SOD-64 | 3~7 天 | 5,130.00 | ||
JANTX1N1206A |
Rectifier Unit: JANTX1N1206A offers precision rectification, guaranteeing stable DC output for various electronic applications |
MICROSEMI | DO-4 | Active | 3~7 天 | 5,035.00 | |
JANTX2N6849 |
TO-205AF Package: JANTX2N6849 -100V Single P-Channel Hi-Rel MOSFET with Hermetic Seal for Optimal Reliability |
MICROSEMI | TO-39 | 3~7 天 | 7,106.00 | ||
JANTX1N6391 |
Schottky diodes and rectifiers engineered for power delivery up to 45 volts (V), with stud-mounting configuration |
Microchip Technology | DO203AA-2 | Active | 3~7 天 | 7,084.00 | |
JANTX1N5816 |
150V 20A Rectifier Diode Switching 35ns 2-Pin DO-4 |
MICROSEMI | DO-4 | 3~7 天 | 4,976.00 | ||
JANTX1N5819UR-1 |
Schottky Diode with a voltage rating of 45V and current capacity of 1A, packaged in a 2-Pin DO-213AB Bag |
Microchip | DO-213AB-2 | Discontinued | 3~7 天 | 3,341.00 | |
JANTX1N6306 |
DO-203AB-packaged hermetic rectifier capable of handling 150 volts and 1 amp, boasting a rapid switching time of 50 nanoseconds |
Microchip Technology | DO5-2 | Active | 3~7 天 | 7,413.00 | |
JANTXV2N2907AUB |
Small signal PNP silicon transistor with 0.6A collector current and 60V breakdown voltage |
Aeroflex | SMD-4 | Active | 3~7 天 | 5,964.00 | |
JANTX2N5664 |
Bipolar Junction NPN Transistor, TO-66 Package |
Microchip | TO-66 | Active | 3~7 天 | 5,396.00 | |
JANTX2N2484 |
Bipolar Transistors - BJT BJTs |
Microchip Technology | TO-18 | Active | 3~7 天 | 9,683.00 | |
JANTX1N6036A |
ESD Suppressors / TVS Diodes 11.3V 132A Bi-Directional TVS THT |
Microchip Technology | DO13-2 | ACTIVE | 3~7 天 | 7,057.00 | |
JANTX1N6053A |
ESD Suppressors / TVS Diodes 53.9V 28A Bi-Directional TVS THT |
microchip | DO-13 | Active | 3~7 天 | 5,722.00 | |
JANTX1N6054A |
TVS Diode Single Bi-Dir 36V 1.5KW 2-Pin DO-13 |
MICROSEMI | DO-13 | ACTIVE | 3~7 天 | 5,614.00 | |
JANTX2N6796 |
Power Field-Effect Transistor |
Infineon | TO-205AF-3 | OBSOLETE | 3~7 天 | 7,656.00 | |
JANTX4N49A |
Hi-Rel Opto Isolator with Base Output |
Tt Electronics / Bi Technologies | TO78-6 | ACTIVE | 3~7 天 | 5,311.00 | |
JANTX2N2907A |
JANTX2N2907A serves as a Small-Signal Bipolar Junction Transistor (BJT), engineered to meet the demands of intricate electronic systems |
Microchip | TO-18-3 | ACTIVE | 3~7 天 | 8,446.00 | |
JANTX1N5811 |
High-performance diode JANTX1N5811: This diode offers superior performance, making it a reliable choice for demanding electronic circuits |
MICROSEMI | DO-13 | Active | 3~7 天 | 5,180.00 | |
JANTX1N5811US |
Rectifier Diode, 150V, DO-213AB |
MICROSEMI | B, SQ-MELF | 3~7 天 | 3,602.00 |