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產品對比: IMW120R090M1H vs IMW120R060M1H vs IMW120R030M1H
隱藏相同的屬性
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全部
零件號
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| Manufacturer | INFINEON | INFINEON | INFINEON |
| Package | TO247 | TO247 | TO247 |
| Description | Field-Effect Power Transistor | High-Power MOSFET IMW120R060M1H | Power Field-Effect Transistor |
| Stock | 3179 | 5643 | 6460 |
| Qualification | Industrial | Industrial | Industrial |
| ID max | 26.0 A | 36.0 A | 56.0 A |
| Mounting | THT | THT | THT |
| Operating Temperature max | 175.0 °C | 175.0 °C | 175.0 °C |
| Operating Temperature min | -55.0 °C | -55.0 °C | -55.0 °C |
| Ptot max | 115.0 W | 150.0 W | 227.0 W |
| Polarity | N | N | N |
| RthJA max | 62.0 K/W | 62.0 K/W | 62.0 K/W |
| RthJC max | 1.3 K/W | 0.1 K/W | 0.66 K/W |
| Tj max | 175.0 °C | 175.0 °C | 175.0 °C |
| VDS max | 1200.0 V | 1200.0 V | 1200.0 V |
零件號
關鍵字: IMW12
零件號 "IMW12" 回傅 9 個結果; 所有結果都匹配且頭部為 "IMW12".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| IMW120R350M1H |
Streamline your IoT projects with this compact wireless module |
INFINEON | TO247 | 3~7 天 | 5,987.00 | ||
| IMW120R140M1H |
Power Field-Effect Transistor, Model IMW120R140M1H |
infineon | TO-247-3 | 3~7 天 | 8,410.00 | ||
| IMW120R220M1H |
N-channel MOSFET with a voltage rating of 1200V, current rating of 13A, and on-resistance of 220mOhm in a TO247-3 package |
infineon | TO-247-3 | ACTIVE | 3~7 天 | 7,570.00 | |
| IMW120R045M1 |
This TO-247-3 N-channel MOSFET |
infineon | TO-247-3 | ACTIVE | 3~7 天 | 9,502.00 | |
| IMW120R045M1XKSA1 |
Power MOSFET transistor with N-channel configuration, featuring a 1.2kV voltage tolerance and 52A current capability in a TO-247 package |
Infineon Technologies | TO-247-3 | NRND | 3~7 天 | 8,627.00 | |
| IMW120R030M1HXKSA1 |
1200V 56A through-hole device |
Infineon Technologies | TO-247-3 | ACTIVE | 3~7 天 | 8,398.00 | |
| IMW120R060M1HXKSA1 |
MOSFET Transistor SiC Unipolar 1.2kV |
Infineon Technologies | TO-247-3 | ACTIVE | 3~7 天 | 6,942.00 | |
| IMW120R014M1HXKSA1 |
MOSFET |
Infineon | PG-TO247-3 | Active | 3~7 天 | 5,658.00 | |
| IMW120R220M1HXKSA1 |
MOSFET SIC DISCRETE |
Infineon | TO-247-3 | Active | 3~7 天 | 6,186.00 |