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產品對比: HY57V641620ETP-H vs HY57V641620HGT-H vs HY57V641620ETP-6
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零件號
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| Manufacturer | Hynix | HYNIX | HYNIX |
| Package | TSOP-54 | TSOP-54 | TSOP-54 |
| Description | High performance memory | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
| Stock | 3491 | 7510 | 7755 |
| Part Life Cycle Code | Obsolete | Obsolete | Obsolete |
| Part Package Code | TSOP2 | TSOP2 | TSOP2 |
| Pin Count | 54 | 54 | 54 |
| ECCN Code | EAR99 | EAR99 | EAR99 |
| HTS Code | 8542.32.00.02 | 8542.32.00.02 | 8542.32.00.02 |
| Access Mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Access Time-Max | 5.4 ns | 5.4 ns | 5.4 ns |
| Additional Feature | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 133 MHz | 133 MHz | 167 MHz |
| I/O Type | COMMON | COMMON | COMMON |
| Interleaved Burst Length | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 Code | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
| JESD-609 Code | e6 | e6 | e6 |
| Length | 22.238 mm | 22.23 mm | 22.238 mm |
| Memory Density | 67108864 bit | 67108864 bit | 67108864 bit |
| Memory IC Type | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| Memory Width | 16 | 16 | 16 |
| Number of Functions | 1 | 1 | 1 |
| Number of Ports | 1 | 1 | 1 |
| Number of Terminals | 54 | 54 | 54 |
| Number of Words | 4194304 words | 4194304 words | 4194304 words |
| Number of Words Code | 4000000 | 4000000 | 4000000 |
| Operating Mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Operating Temperature-Max | 70 °C | 70 °C | 70 °C |
| Organization | 4MX16 | 4MX16 | 4MX16 |
| Output Characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Code | TSOP2 | TSOP2 | TSOP2 |
| Package Equivalence Code | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| Power Supplies | 3.3 V | 3.3 V | 3.3 V |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified |
| Refresh Cycles | 4096 | 4096 | 4096 |
| Seated Height-Max | 1.194 mm | 1.194 mm | 1.194 mm |
| Self Refresh | YES | YES | YES |
| Sequential Burst Length | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| Standby Current-Max | 0.002 A | 0.002 A | 0.002 A |
| Supply Current-Max | 0.18 mA | 0.16 mA | 0.195 mA |
| Supply Voltage-Max (Vsup) | 3.6 V | 3.6 V | 3.6 V |
| Supply Voltage-Min (Vsup) | 3 V | 3 V | 3 V |
| Supply Voltage-Nom (Vsup) | 3.3 V | 3.3 V | 3.3 V |
| Surface Mount | YES | YES | YES |
| Technology | CMOS | CMOS | CMOS |
| Temperature Grade | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal Finish | TIN BISMUTH | TIN BISMUTH | TIN BISMUTH |
| Terminal Form | GULL WING | GULL WING | GULL WING |
| Terminal Pitch | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal Position | DUAL | DUAL | DUAL |
| Width | 10.16 mm | 10.16 mm | 10.16 mm |
| Rohs Code | Yes | Yes |
零件號
關鍵字: HY57V
零件號 "HY57V" 回傅 20 個結果; 所有結果都匹配且頭部為 "HY57V".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| HY57V641620FTP-6 |
TSOP2-54, 0.80 MM PITCH, LEAD FREE |
Sk Hynix Inc | TSOP54 | 3~7 天 | 5,120.00 | ||
| HY57V281620FTP-H |
Lead-free, TSOP2-54 |
Sk Hynix Inc | TSOP-54 | 3~7 天 | 3,899.00 | ||
| HY57V561620FTP-H |
The HY57V561620FTP-H is a high-speed, low-power dynamic random-access memory (DRAM) chip with a capacity of 512 megabits |
HYNIX | TSOP-54 | 3~7 天 | 7,843.00 | ||
| HY57V28820HCT-H |
HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 Mb |
HYNIX | TSOP54 | 3~7 天 | 6,060.00 | ||
| HY57V56820FTP-H |
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
HYNIX | TSOP-54 | 3~7 天 | 5,172.00 | ||
| HY57V641620HG |
French Electronic Distributor since 1988 |
HYNIX | TSOP | 3~7 天 | 4,512.00 | ||
| HY57V281620HCT-H |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
HYNIX | TSSOP-54 | 3~7 天 | 4,617.00 | ||
| HY57V641620FTP-7 |
5.4ns access time |
Sk Hynix Inc | TSOP-54 | 3~7 天 | 4,066.00 | ||
| HY57V161610DTC-7 |
Synchronous DRAM module with 1MX16 capacity, operating at 6ns speed, utilizing CMOS technology in a PDSO50 package measuring 0 |
SAMSUNG | TSOP-50 | 3~7 天 | 4,122.00 | ||
| HY57V161610ETP |
HY57V161610ETP is a 16Mb Synchronous DRAM chip with a data transfer rate of 143MHz. |
HYNIX | TSSOP | 3~7 天 | 3,534.00 | ||
| HY57V658020 |
HY57V658020 is a 256Mb Synchronous DRAM chip for high-speed memory applications. |
HYNIX | TSSOP5 | 3~7 天 | 6,697.00 | ||
| HY57V28820HCT |
HY57V28820HCT is a high-speed CMOS synchronous DRAM chip with 2Mx8 organization. |
HYNIX | SSOP | 3~7 天 | 4,945.00 | ||
| HY57V64820HG |
HY57V64820HG is a Synchronous Dynamic RAM chip with 64MB capacity and 133MHz clock speed. |
HYNIX | SOP | 3~7 天 | 4,693.00 | ||
| HY57V161610FTP-6 |
Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 |
HYNIX | TSSOP | 3~7 天 | 4,864.00 | ||
| HY57V281620FTP-HI |
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HYNIX | TSOP | 3~7 天 | 5,663.00 | ||
| HY57V281620FTP-6 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
HYNIX | TSSOP | 3~7 天 | 7,523.00 | ||
| HY57V281620ETP-6 |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
HYNIX | TSOP-54 | 3~7 天 | 4,021.00 | ||
| HY57V161610ETP-7 |
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 |
HYNIX | TSOP-50 | 3~7 天 | 4,066.00 | ||
| HY57V561620BT-H |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
HYNIX | TSOP-54 | 3~7 天 | 6,041.00 | ||
| HY57V658020B |
4 Banks x 2M x 8Bit Synchronous DRAM |
HYNIX | TSOP | 3~7 天 | 5,834.00 |