產品對比: 2MBI200N-120 vs 2MBI200HH-120-50 vs 2MBI200VH-120-50

隱藏相同的屬性

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零件號
Manufacturer Fuji Electric Co Ltd FUJITSU Fuji Electric
Package Module Module IGBT
Description N-Channel Insulated Gate Bipolar Transistor (IGBT) in MODULE-7 packaging 200A and 1200V rating IGBT module with dual diode, 200A and 1200V, part of the V series
Stock 3183 4553 4756
Part Life Cycle Code Obsolete Active Active
ECCN Code EAR99 EAR99 EAR99
Collector Current-Max (IC) 200 A 300 A 240 A
Collector-Emitter Voltage-Max 1200 V 1200 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7 R-XUFM-X7 R-XUFM-X7
Number of Elements 2 2 2
Number of Terminals 7 7 7
Package Body Material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL N-CHANNEL
Surface Mount NO NO NO
Terminal Form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER UPPER
Transistor Application MOTOR CONTROL POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON SILICON
Turn-off Time-Nom (toff) 850 ns 300 ns 800 ns
Turn-on Time-Nom (ton) 650 ns 600 ns
Rohs Code Yes Yes
Case Connection ISOLATED ISOLATED
Gate-Emitter Voltage-Max 20 V 20 V
Operating Temperature-Max 150 °C 125 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max (Abs) 1790 W 1110 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
VCEsat-Max 3.65 V 2.4 V
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Additional Feature LOW SATURATION VOLTAGE
Qualification Status Not Qualified
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零件號

關鍵字: 2MBI2

零件號 "2MBI2" 回傅 20 個結果; 所有結果都匹配且頭部為 "2MBI2".

零件號 描述 製造商 包裝/箱 生命週期狀態 貨物週期 有存貨 操作
2MBI200VA-060-50

Fuji 2MBI200VA-060-50: An IGBT Module featuring dual functionality

Fuji Electric Module 3~7 天 7,306.00
2MBI225VN-120-50

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

FUJITSU Module 3~7 天 7,787.00
2MBI200S-120

Heavy-duty IGBT designed for demanding industrial and automotive power control applications, offering high reliability and efficiency

Fuji Electric Co Ltd 3~7 天 5,361.00
2MBI200N-060

Compact and reliable N-channel power device for DC/DC conversio

Fuji Electric Co Ltd 3~7 天 2,292.00
2MBI200L-060

Powerful transistors for robust power control in harsh environments

Fuji Electric Co Ltd 3~7 天 5,094.00
2MBI200-060

FUJITSU MODULE 3~7 天 208.00
2MBI200-120-01

FIJU 3~7 天 59.00
2MBI200BT-120

FUJITSU 200A1200 3~7 天 200.00
2MBI200BU-120

FUJITSU MODULE 3~7 天 17.00
2MBI200F-025A

FUJITSU MODULE 3~7 天 57.00
2MBI200F-060

FUJITSU MODULE 3~7 天 125.00
2MBI200F-060X3

FUJITSU 3~7 天 56.00
2MBI200FB-060

FUJITSU MODULE 3~7 天 10.00
2MBI200H-120

FUJITSU MODULE 3~7 天 30.00
2MBI200HH-120

FUJITSU 3~7 天 30.00
2MBI200HH-120-50

FUJITSU MODULE 3~7 天 208.00
2MBI200J-060

FUJITSU MODULE 3~7 天 100.00
2MBI200J120

FUJITSU MODULE 3~7 天 20.00
2MBI200J-140

FUJITSU MODULE 3~7 天 100.00
2MBI200K-060-01

FUJITSU MODULE 3~7 天 3,988.00