TK65G10N1
Power MOSFET for N-type operation with a VDSS of up to 150V and a maximum rating of 60VTK65G10N1
Power MOSFET for N-type operation with a VDSS of up to 150V and a maximum rating of 60V
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TK65G10N1 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
TK65G10N1 is a power MOSFET transistor that belongs to the TK series of components. It is commonly used in various electronic devices for power control and switching applications. The TK65G10N1 transistor has a high power-handling capability with a rated voltage of 1000V and a continuous drain current of 65A. This makes it suitable for use in high-power circuits where efficient power management is required. In terms of specifications, the TK65G10N1 has a low on-state resistance, which helps in minimizing power loss and improving the overall efficiency of the circuit. It also has a fast switching speed, allowing for quick response times in switching applications. The component is housed in a TO-220 package, which provides good thermal conductivity and makes it easy to mount on a PCB. It also has a wide operating temperature range, making it suitable for use in various environmental conditions.
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主要特徵
- Glass-ceramic cooktop
- 4 cooking zones
- Touch control operation
- 9 power levels per zone
- Residual heat indicators
- Child safety lock
- Timer function
- Easy to clean surface
- Black design
- Dimensions: W 60cm x D 52cm
應用
- Residential refrigeration units
- Commercial refrigeration systems
- Industrial refrigeration equipment
- Automotive air conditioning systems
- Medical refrigeration units
- Food and beverage cooling systems
- Pharmaceutical storage facilities
- Cold storage warehouses
- Supermarket refrigeration systems
- HVAC systems
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規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Part Life Cycle Code | End Of Life | Reach Compliance Code | |
ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 93 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (Abs) (ID) | 100 A |
Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.0045 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 42 pF |
JESD-30 Code | R-PSSO-G2 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 156 W |
Pulsed Drain Current-Max (IDM) | 283 A | Surface Mount ! | YES |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is TK65G10N1?
The TK65G10N1 is a high-frequency RF power transistor designed for wireless communication applications. It is manufactured by a leading semiconductor company specializing in RF components.
How Does TK65G10N1 Work?
The TK65G10N1 works by amplifying radio frequency signals with high power efficiency and linearity. It is often used in RF power amplifiers to boost signal strength in transmitters for applications such as cellular base stations, radar systems, and microwave links.
How Many Pins does TK65G10N1 have and What are the Functions of the Pinout Configuration?
The TK65G10N1 is housed in a specific package. Please refer to the datasheet or manufacturer's documentation for the detailed pinout configuration.
What are the Pros and Cons of TK65G10N1?
Pros:
- High-Frequency Operation: Designed for efficient amplification of radio frequency signals.
- Power Efficiency: Provides high power efficiency, reducing energy consumption.
- Linearity: Offers good linearity for accurate signal reproduction.
- Reliability: Manufactured by a reputable semiconductor company known for quality RF components.
Cons:
- Specific Application: Tailored for RF power amplifier applications, may not be suitable for other general-purpose needs.
- External Components: May require additional matching networks or biasing circuits for optimal performance.
- Cost: High-performance RF transistors like the TK65G10N1 may come at a premium price.
Are There Any Equivalents/Alternatives to TK65G10N1 for Recommendation?
Please consult the manufacturer's website or technical support for specific equivalents or alternatives to the TK65G10N1 from other semiconductor companies.
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