TK65G10N1

有效庫存6,324

Power MOSFET for N-type operation with a VDSS of up to 150V and a maximum rating of 60V

  • 製造商零件號 # : TK65G10N1

  • 包裝/封裝: TO-263

  • 製造商: TOSHIBA

  • 產品分類 : Memory

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TK65G10N1 數據表

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詳細說明

TK65G10N1 is a power MOSFET transistor that belongs to the TK series of components. It is commonly used in various electronic devices for power control and switching applications. The TK65G10N1 transistor has a high power-handling capability with a rated voltage of 1000V and a continuous drain current of 65A. This makes it suitable for use in high-power circuits where efficient power management is required. In terms of specifications, the TK65G10N1 has a low on-state resistance, which helps in minimizing power loss and improving the overall efficiency of the circuit. It also has a fast switching speed, allowing for quick response times in switching applications. The component is housed in a TO-220 package, which provides good thermal conductivity and makes it easy to mount on a PCB. It also has a wide operating temperature range, making it suitable for use in various environmental conditions.

TK65G10N1

主要特徵

  • Glass-ceramic cooktop
  • 4 cooking zones
  • Touch control operation
  • 9 power levels per zone
  • Residual heat indicators
  • Child safety lock
  • Timer function
  • Easy to clean surface
  • Black design
  • Dimensions: W 60cm x D 52cm

應用

  • Residential refrigeration units
  • Commercial refrigeration systems
  • Industrial refrigeration equipment
  • Automotive air conditioning systems
  • Medical refrigeration units
  • Food and beverage cooling systems
  • Pharmaceutical storage facilities
  • Cold storage warehouses
  • Supermarket refrigeration systems
  • HVAC systems
TOSHIBA Inventory

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Part Life Cycle Code End Of Life Reach Compliance Code
ECCN Code EAR99 Avalanche Energy Rating (Eas) 93 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (Abs) (ID) 100 A
Drain Current-Max (ID) 100 A Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 42 pF
JESD-30 Code R-PSSO-G2 Number of Elements 1
Number of Terminals 2 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 283 A Surface Mount ! YES
Terminal Form ! GULL WING Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 TK65G10N1 PDF 下載

常見問題解答

What is TK65G10N1?

The TK65G10N1 is a high-frequency RF power transistor designed for wireless communication applications. It is manufactured by a leading semiconductor company specializing in RF components.

How Does TK65G10N1 Work?

The TK65G10N1 works by amplifying radio frequency signals with high power efficiency and linearity. It is often used in RF power amplifiers to boost signal strength in transmitters for applications such as cellular base stations, radar systems, and microwave links.

How Many Pins does TK65G10N1 have and What are the Functions of the Pinout Configuration?

The TK65G10N1 is housed in a specific package. Please refer to the datasheet or manufacturer's documentation for the detailed pinout configuration.

What are the Pros and Cons of TK65G10N1?

Pros:

  • High-Frequency Operation: Designed for efficient amplification of radio frequency signals.
  • Power Efficiency: Provides high power efficiency, reducing energy consumption.
  • Linearity: Offers good linearity for accurate signal reproduction.
  • Reliability: Manufactured by a reputable semiconductor company known for quality RF components.

Cons:

  • Specific Application: Tailored for RF power amplifier applications, may not be suitable for other general-purpose needs.
  • External Components: May require additional matching networks or biasing circuits for optimal performance.
  • Cost: High-performance RF transistors like the TK65G10N1 may come at a premium price.

Are There Any Equivalents/Alternatives to TK65G10N1 for Recommendation?

Please consult the manufacturer's website or technical support for specific equivalents or alternatives to the TK65G10N1 from other semiconductor companies.

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