TH58BVG2S3HTA00

Name: TH58BVG2S3HTA00
Rating: 4.5 (10 reviews)

RoHS compliant 4Gbit TFSOP-48-18.4mm NAND FLASH suitable for various applications

4,777 有效庫存

TH58BVG2S3HTA00

有效庫存4,777

RoHS compliant 4Gbit TFSOP-48-18.4mm NAND FLASH suitable for various applications

製造商零件號 # : TH58BVG2S3HTA00
包裝/封裝: TSSOP
零件狀態 : Active
製造商: TOSHIBA
產品分類 : Memory

品質保證

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認證

我們已成功獲得各項認證標準，並建立了自己的專業檢測實驗室。這確保了我們向客戶提供的每件產品都符合最高的品質標準。我們遵守嚴格的測試協議，以保持我們產品的一致性和準確性。為了確保我們的產品是原裝正品，我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。

運輸與付款

關於運送

我們通常會在幾個工作日內通過可靠的運輸公司（例如 FedEx、SF、UPS 或 DHL）運送訂單。我們還支持其他運輸方式。如果您想詢問具體的運輸細節或費用，請隨時與我們聯繫。

關於付款

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如果您有特定的付款方式或想詢問費率和其他詳細信息，請隨時與我們聯繫。

電匯

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西聯匯款

速匯金

服務與包裝

About After Sales Service

All Parts Extended Quality Guarantee

自發貨之日起 90 天內發起申請。

與我們的工作人員確認退貨或換貨。

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關於包裝

在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。外包裝堅固耐用且閉合牢固。我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。

例子

捲帶式

剪膠帶

管或託盤

TH58BVG2S3HTA00 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

快速報價

請提交詢價 TH58BVG2S3HTA00 或發送電子郵件給我們： Email: [email protected], 我們將在 12 小時內與您聯繫。

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詳細說明

In summary, the TH58BVG2S3HTA00 is a versatile and high-performance option for anyone in need of fast and reliable storage. With its impressive data transfer rates, power efficiency, and durability, this model ticks all the boxes for both personal and professional use. Upgrade your system with the TH58BVG2S3HTA00 and experience the difference firsthand

主要特徵

Organization
Memory cell allay 2112 u 64K u 8 u 2
Register 2112 u 8
Page size 2112bytes
Block size (128K 4K) bytes
Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
Mode control
Serial input㧛output
Command control
Powersupply VCC 2.7 V to 3.6 V
Program/Erase Cycles 1E5 Cycles(With ECC)
Access time
Cell array to register 25 μs max
Serial Read Cycle 50 ns min
Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ.
Erase (avg.) 10 mA typ.
Standby 50 μA max
Package
TSOP I 48-P-1220-0.50(Weight : 0.53 g typ.)

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Manufacturer	Toshiba Semiconductor and Storage	Product Category !	Memory ICs
Series	Benand™	Packaging !	Tray
Mounting-Style	0°C ~ 70°C (TA)	Package-Case	Parallel
Operating-Temperature	2.7 V ~ 3.6 V	Interface	EEPROM - NAND
Voltage-Supply	25ns	Supplier-Device-Package	+ 70 C
Memory Capacity	0 C	Memory-Type	512 M x 8
Speed	TSOP-48

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 TH58BVG2S3HTA00 PDF 下載

常見問題解答

What is TH58BVG2S3HTA00?

The TH58BVG2S3HTA00 is a NAND flash memory chip manufactured by Toshiba. It is commonly used in various electronic devices such as smartphones, tablets, digital cameras, and industrial applications for data storage.

How Does TH58BVG2S3HTA00 Work?

The TH58BVG2S3HTA00 works by storing data in an array of memory cells that are organized in a grid pattern. Each memory cell can store multiple bits of data in the form of electrical charges. When data is written or read from the NAND flash memory, the controller sends signals to the memory cells to either store or retrieve the stored data.

How Many Pins does TH58BVG2S3HTA00 have and What are the Functions of the Pinout Configuration?

The TH58BVG2S3HTA00 is typically available in a TSOP (Thin Small Outline Package) with a certain number of pins. The pinout configuration includes power supply pins, data input/output pins, control pins for chip enable, write enable, output enable, and various address lines for memory access.

What are the Pros and Cons of TH58BVG2S3HTA00?

Pros:

High Storage Capacity: Offers a large storage capacity for data-intensive applications.
Fast Data Transfer: Provides high-speed data transfer rates for efficient read and write operations.
Cost-Effective: NAND flash memory is generally more cost-effective compared to other types of non-volatile memory.
Compact Form Factor: Comes in a compact package suitable for small form factor devices.

Cons:

Endurance Limit: NAND flash memory has a limited number of write/erase cycles, affecting its lifespan in certain applications.
Slower Write Speed: Write operations can be slower compared to read operations in NAND flash memory.
Data Retention: Data retention may degrade over time, requiring periodic data refreshing.

Are There Any Equivalents/Alternatives to TH58BVG2S3HTA00 for Recommendation?

Some equivalents or alternatives to the TH58BVG2S3HTA00 NAND flash memory chip from other manufacturers include products like the Micron 3D NAND, Samsung V-NAND, and Western Digital NAND flash memory.