SQJ463EP-T1_GE3
Automotive-Grade MOSFET capable of handling 30A current at 40VSQJ463EP-T1_GE3
Automotive-Grade MOSFET capable of handling 30A current at 40V
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製造商零件號 # : SQJ463EP-T1_GE3
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包裝/封裝: PowerPAK-SO-8L-4
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製造商: Vishay
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產品分類 : Single FETs, MOSFETs
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SQJ463EP-T1_GE3 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The PowerPAK package also provides excellent thermal performance and low thermal resistance, allowing for efficient heat dissipation and improved reliability in high-power applications. This, combined with the advanced metal-oxide semiconductor technology, makes the SQJ463EP-T1_GE3 an ideal choice for power management in various industrial, automotive, and consumer electronics applications
主要特徵
- High Current Capability
- Wide Operating Temperature Range
- Halogen-Free Materials Used
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8L-4 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 30 A |
Rds On - Drain-Source Resistance | 8 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 150 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
Pd - Power Dissipation | 83 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Tradename | TrenchFET |
Series | SQ | Brand | Vishay / Siliconix |
Configuration | Single | Fall Time | 51 ns |
Forward Transconductance - Min | 45 S | Product Type ! | MOSFET |
Rise Time ! | 17 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 121 ns | Typical Turn-On Delay Time | 21 ns |
Unit Weight | 0.017870 oz |
常見問題解答
What is SQJ463EP-T1_GE3?
The SQJ463EP-T1_GE3 is a 20V P-Channel MOSFET designed by Vishay Siliconix. It is suitable for high-efficiency power management and load switching applications in various electronic systems such as power supplies, battery management, and motor control.
How Does SQJ463EP-T1_GE3 Work?
The SQJ463EP-T1_GE3 operates as a P-Channel MOSFET, allowing it to control the flow of current from the source to the drain when a negative voltage is applied to the gate. It can be used to switch loads on and off in power management circuits, providing efficient power control and regulation.
How Many Pins does SQJ463EP-T1_GE3 have and What are the Functions of the Pinout Configuration?
The SQJ463EP-T1_GE3 is housed in a PowerPAK SO-8 package. The pinout configuration includes:
- Gate (G): Controls the conductivity of the MOSFET.
- Drain (D): Connects to the positive supply voltage when the MOSFET is in the on-state.
- Source (S): Connects to the load or ground, depending on the circuit configuration.
- Body Diode (B): Internal body diode for reverse current flow protection.
What are the Pros and Cons of SQJ463EP-T1_GE3?
Pros:
- Low ON Resistance: Provides efficient power switching with low conduction losses.
- High Voltage Rating: Suitable for applications requiring a 20V maximum drain-source voltage.
- P-Channel Configuration: Allows for high-side load switching in power management circuits.
- Compact Package: The PowerPAK SO-8 package offers a space-efficient footprint for compact designs.
Cons:
- Drive Voltage: Requires a negative gate voltage for conduction, which may need level shifting in some systems.
- Heat Dissipation: May require thermal management for high-power applications due to conduction losses.
- Gate Capacitance: The gate-source capacitance can affect switching speed and drive requirements.
Are There Any Equivalents/Alternatives to SQJ463EP-T1_GE3 for Recommendation?
- The SI7645DP-T1-GE3 from Vishay Siliconix is a similar 20V P-Channel MOSFET with a different package and possibly other specifications.
- Alternatives to the SQJ463EP-T1_GE3 include the AO3400A from Alpha & Omega Semiconductor and the DMP3010SFG from Diodes Incorporated.
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